NXP Semiconductors
Technical Data
Document Number: A3T18H360W23S
Rev. 1, 06/2017
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 1805 to 1880 MHz.
1800 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQA
= 700 mA, V
GSB
= 0.6 Vdc, P
out
= 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
16.3
16.6
16.6
D
(%)
52.8
52.3
51.6
Output PAR
(dB)
7.7
7.6
7.5
ACPR
(dBc)
–30.3
–31.7
–32.8
A3T18H360W23SR6
1805–1880 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
Advanced high performance in--package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate--source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating
conditions
Designed for digital predistortion error correction systems
ACP-
-1230S-
-4L2S
Carrier
RF
inA
/V
GSA
1
(1)
RF
inB
/V
GSB
2
Peaking
(Top View)
6 VBW
A
(2)
5 RF
outA
/V
DSA
4 RF
outB
/V
DSB
3 VBW
B
(2)
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device can operate with V
DD
current
supplied through pin 3 and pin 6.
2017 NXP B.V.
A3T18H360W23SR6
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
CW Operation @ T
C
= 25C when DC current is fed through pin 3 and pin 6
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
–0.5, +65
–6.0, +10
32, +0
–65 to +150
–40 to +150
–40 to +225
104
0.48
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74C, 63 W Avg., W--CDMA, 28 Vdc, I
DQA
= 700 mA,
V
GSB
= 0.6 Vdc, 1840 MHz
Symbol
R
JC
Value
(2,3)
0.22
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2
C3
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics - Side A, Carrier
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 120
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 700 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.2 Adc)
On Characteristics - Side B, Peaking
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 240
Adc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
1.
2.
3.
4.
V
GS(th)
V
DS(on)
0.8
0.1
1.2
0.15
1.6
0.3
Vdc
Vdc
V
GS(th)
V
GSA(Q)
V
DS(on)
1.4
2.3
0.1
1.8
2.7
0.15
2.3
3.1
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Side A and Side B are tied together for these measurements.
(continued)
A3T18H360W23SR6
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3)
(In NXP Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 700 mA, V
GSB
= 0.6 Vdc, P
out
= 63 W Avg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
P
out
@ 3 dB Compression Point, CW
Adjacent Channel Power Ratio
G
ps
D
P3dB
ACPR
16.0
49.0
54.0
—
16.6
51.6
54.7
–32.8
19.0
—
—
–29.0
dB
%
dBm
dBc
Load Mismatch
(3)
(In NXP Doherty Test Fixture, 50 ohm system) I
DQA
= 700 mA, V
GSB
= 0.6 Vdc, f = 1840 MHz, 12
sec(on),
10% Duty Cycle
VSWR 10:1 at 32 Vdc, 372 W Pulsed CW Output Power
(3 dB Input Overdrive from 199 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance
(3)
(In NXP Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 700 mA, V
GSB
= 0.6 Vdc, 1805–1880 MHz
Bandwidth
P
out
@ 3 dB Compression Point
(4)
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–1880 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P
out
= 63 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P3dB
—
—
375
–23
—
—
W
VBW
res
G
F
G
P1dB
—
—
—
—
130
0.3
0.003
0.04
—
—
—
—
MHz
dB
dB/C
dB/C
Table 5. Ordering Information
Device
A3T18H360W23SR6
1.
2.
3.
4.
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
ACP--1230S--4L2S
V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A3T18H360W23SR6
RF Device Data
NXP Semiconductors
3
V
GGA
C17
C11
C15
C10
V
DDA
D84100
C2
C1
R1
C
CUT OUT AREA
C9
C19
C8
Z1
R3
C4 C3
P
C18
A3T18H360_V1
Rev. 2
C12
C5
R2
C7
C14
C6
C13
C16
V
DDB
V
GGB
Note: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Figure 2. A3T18H360W23SR6 Test Circuit Component Layout
Table 6. A3T18H360W23SR6 Test Circuit Component Designations and Values
Part
C1, C5, C6, C9
C2, C4
C3, C18, C19
C7, C8
C10
C11, C12, C13, C14, C15
C16, C17
R1, R2
R3
Z1
PCB
Description
20 pF Chip Capacitor
12 pF Chip Capacitor
0.6 pF Chip Capacitor
5 pF Chip Capacitor
2.2
F
Chip Capacitor
15
F
Chip Capacitor
220
F,
100 V Electrolytic Capacitor
2.2
,
1/8 W Chip Resistor
50
,
8 W Termination Chip Resistor
1700-2000 MHz Band, 90, 5 dB Directional Coupler
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
GQM2195C2E200GB12D
GQM2195C2E120FB12D
GQM2195C2ER60BB12D
GQM2195C2E5R0BB12D
HMK432B7225KM-T
C5750X7S2A156M230KB
MCGPR100V227M16X26-RH
CRCW08052R20JNEA
C8A50Z4A
X3C19P1-05S
D84100
Manufacturer
Murata
Murata
Murata
Murata
Taiyo Yuden
TDK
Multicomp
Vishay
Anaren
Anaren
MTL
A3T18H360W23SR6
4
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 1805–1880 MHz
V
DD
= 28 Vdc, P
out
= 63 W (Avg.), I
DQA
= 700 mA, V
GSB
= 0.6 Vdc
17.0
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
16.8
G
ps
, POWER GAIN (dB)
16.6
16.4
16.2
16.0
15.8
15.6
15.4
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
15.2
1760 1780 1800 1820 1840
ACPR
1860
1880
1900
PARC
D
G
ps
D
, DRAIN
EFFICIENCY (%)
–2.0
ACPR (dBc)
–2.2
–2.4
–2.6
–2.8
–3.0
PARC (dB)
–20
–25
–30
–35
–40
–45
–50
ACPR (dBc)
D
DRAIN EFFICIENCY (%)
17.2
55
54
53
52
51
–28.5
–29.5
–30.5
–31.5
–32.5
–33.5
1920
f, FREQUENCY (MHz)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 63 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 16 W (PEP), I
DQA
= 700 mA
V
GSB
= 0.6 Vdc, Two--Tone Measurements
–15
(f1 + f2)/2 = Center Frequency of 1840 MHz
–30
–45
–60
–75
IM5--U
IM5--L
IM7--U
IM7--L
IM3--U
IM3--L
0
1
10
TWO--TONE SPACING (MHz)
100
200
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
18.0
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
17.5
G
ps
, POWER GAIN (dB)
17.0
16.5
16.0
15.5
15.0
1
0
–1
ACPR
–2
–3
–4
–5
–2 dB = 56 W
–3 dB = 78 W
G
ps
PARC
40
30
20
10
125
V
DD
= 28 Vdc, I
DQA
= 700 mA, V
GSB
= 0.6 Vdc, f = 1840 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
–1 dB = 34 W
D
70
60
50
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
5
25
45
65
85
105
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
A3T18H360W23SR6
RF Device Data
NXP Semiconductors
5
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