Document Number: MWIC930
Freescale Semiconductor
Rev. 5, 5/2006
Technical Data
Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part
RF LDMOS Wideband Integrated
Power Amplifiers
replacement. N suffix added to part number to indicate transition to lead - free terminations.
The MWIC930 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband On - Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA.
Final Application
•
Typical Performance @ P1dB: V
DD
= 26 Volts, I
DQ1
= 90 mA, I
DQ2
=
240 mA, P
out
= 30 Watts P1dB, Full Frequency Band (921 - 960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 45%
Driver Application
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 27 Volts, I
DQ1
=
90 mA, I
DQ2
= 240 mA, P
out
= 5 Watts Avg., Full Frequency Band
(865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 52 dBc in 30 kHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MWIC930R1
MWIC930GR1
746 - 960 MHz, 30 W, 26 - 28 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
ARCHIVE INFORMATION
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MWIC930R1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MWIC930GR1
V
RD2
V
RG2
V
DS1
RF
in
V
RD1
V
RG1
V
GS1
V
GS2
V
DS2
/RF
out
GND
V
RD2
V
RG2
V
DS1
V
RD1
RF
in
V
RG1
V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out/
V
DS2
13
12
NC
GND
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MWIC930R1 MWIC930GR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
- 65 to +175
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 30 W CW)
Stage 1, 26 Vdc, I
DQ
= 90 mA
Stage 2, 26 Vdc, I
DQ
= 240 mA
Stage 1, 27 Vdc, I
DQ
= 90 mA
Stage 2, 27 Vdc, I
DQ
= 240 mA
Stage 1, 27 Vdc, I
DQ
= 90 mA
Stage 2, 27 Vdc, I
DQ
= 240 mA
Symbol
R
θJC
5.9
1.4
6.5
1.7
6.5
1.8
Value
(1,2)
Unit
°C/W
ARCHIVE INFORMATION
CDMA Application
(P
out
= 5 W CW)
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 27 Vdc, I
DQ1
= 90 mA, I
DQ2
= 240 mA, P
out
= 5 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @
±750
MHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Power Added Efficiency
Input Return Loss
(f = 880 MHz)
Adjacent Channel Power Ratio
Quiescent Current Accuracy over Temperature
(2)
Stage 1 with 33.2 kΩ Gate Feed Resistors ( - 30 to 115°C)
Stage 2 with 47.5 kΩ Gate Feed Resistors ( - 30 to 115°C)
Gain Flatness in 80 MHz Bandwidth @ P
out
= 5 W CW
Deviation from Linear Phase in 80 MHz Bandwidth @ P
out
= 5 W CW
Delay @ P
out
= 5 W CW Including Output Matching
Part - to - Part Phase Variation @ P
out
= 5 W CW
G
ps
PAE
IRL
ACPR
28
18
—
—
—
ΔI
1QT
ΔI
2QT
G
F
Φ
Delay
ΔΦ
—
—
—
—
±2.5
±2.5
0.3
0.6
3
±15
—
—
—
—
dB
°
ns
°
31
21
- 12
- 52
—
—
-9
- 48
—
dB
%
dB
dBc
%
Typical Performances
(In Freescale Test Fixture) V
DD
= 26 Vdc, I
DQ1
= 90 mA, I
DQ2
= 240 mA, 840 MHz<Frequency<920 MHz
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977/D,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977.
(continued)
MWIC930R1 MWIC930GR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
GSM EDGE Application
(P
out
= 15 W CW)
Table 5. Electrical Characteristics
(T
C
= 25°C, unless otherwise noted) (
continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM/GSM EDGE Performances
(In Freescale GSM/GSM EDGE Test Fixture, 50
οhm
system) V
DD
= 27 Vdc, I
DQ1
= 90 mA, I
DQ2
=
240 mA, 921 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
Power Gain @ P
out
= 30 W CW
Power Added Efficiency @ P
out
= 30 W CW
Input Return Loss @ P
out
= 30 W CW
Intermodulation Distortion
(15 W, 2 - Tone, 100 kHz Tone Spacing)
Intermodulation Distortion
(1 W, 2 - Tone, 100 kHz Tone Spacing)
Gain Flatness in a 40 MHz Bandwidth @ P
out
= 30 W CW
P1dB
G
ps
PAE
IRL
IMD
IMD
backoff
G
F
Φ
—
—
—
—
—
—
—
—
30
30
45
- 12
- 30
- 45
0.3
0.6
—
—
—
—
—
—
—
—
W
dB
%
dB
dBc
dBc
dB
°
ARCHIVE INFORMATION
Deviation from Linear Phase in a 40 MHz Bandwidth @ P
out
= 30 W CW
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
D1
C15
RF
INPUT
C12
C9
Z1
1
2
3
4
5
6
7
8
9
10 NC
11
Z8
16
NC 15
Z7
Z2
Z3
Z4
Z5
C1
C3
C2
Z9
NC 13
Quiescent Current
Temperature Compensation
12
Z10
Z6
C5
C6
V
D2
RF
OUTPUT
14
V
G1
R1
V
G2
R2
C14
R4
C11
C8
C13
R3
C10
C7
C4
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
0.0438″ x 0.970″ 50
Ω
Microstrip
(not including lead pad)
0.234″ x 0.1183″ Microstrip
(including lead pad)
0.1575″ x 0.9379″ Microstrip
0.08425″ x 0.0729″ Microstrip
0.08425″ x 0.5111″ Microstrip
Z6
Z7
Z8
Z9
Z10
PCB
0.0438″ x 0.2009″ Microstrip
0.5274″ x 0.0504″ Microstrip
0.0504″ x 0.250″ Microstrip
0.880″ x 0.0254″ Microstrip
0.0254″ x 0.250″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.50
Figure 3. MWIC930R1(GR1) Test Fixture Schematic
Table 6. MWIC930R1(GR1) Test Fixture Component Designations and Values
Part
*C1
*C2
*C3
*C4, C5, C7, C8, C9
C6, C13, C14, C15
C10, C11, C12
R1, R2
R3, R4
Description
15 pF High Q Capacitor
6.8 pF High Q Capacitor - GSM Fixture
8.2 pF High Q Capacitor - CDMA Fixture
5.6 pF High Q Capacitor
47 pF High Q Capacitors
1
μF
Chip Capacitors
10 nF Chip Capacitors
1 kW, 1/8 W Chip Resistors
1 MW, 1/4 W Chip Resistors
Part Number
ATC600S150JW
ATC600S6R8CW
ATC600S8R2CW
ATC600S5R6CW
ATC600S470JW
GRM42- 2X7R105K050AL
C0603C103J5R
RM73B2AT102J
RM73B2BT105J
Manufacturer
ATC
ATC
ATC
ATC
Murata
Kemet
KOA Speer
KOA Speer
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930R1 MWIC930GR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
VD1
C15
MWIC930
Rev 0
VD2
C6
ARCHIVE INFORMATION
C5
C12
RF
Input
C7
R3
C13
C4
R1
VG1
C10
C11
C8
C9
C1
C2
C3
RF
Output
R4
C14
R2
VG2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MWIC930R1(GR1) Test Circuit Component Layout
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
