Freescale Semiconductor
Technical Data
Replaced by MRFG35003NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRFG35003MT1
Rev. 3, 1/2006
MRFG35003MT1
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
•
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
•
3 Watts P1dB @ 3.55 GHz
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
3.5 GHz, 3 W, 12 V
POWER FET
GaAs PHEMT
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Value
15
8.1
(2)
0.05
(2)
-5
29
- 65 to +150
175
- 20 to +85
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Class AB
Symbol
R
θJC
Value
18.5
(2)
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35003MT1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 2.5 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate - Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 6.5 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
D
= 55 mA)
Power Gain
(V
DD
= 12 Vdc, I
DQ
= 55 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(V
DD
= 12 Vdc, I
DQ
= 55 mA, f = 3.55 GHz)
Drain Efficiency
(V
DD
= 12 Vdc, I
DQ
= 55 mA, P
out
= 0.30 W Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V
DD
= 12 Vdc, P
out
= 0.30 W Avg., I
DQ
= 55 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
G
ps
P
1dB
h
D
Min
—
—
—
—
- 1.2
- 1.2
10
—
23
Typ
1.3
< 1.0
—
< 1.0
- 0.9
- 0.9
11.5
3
25
Max
—
100
450
7
- 0.7
- 0.7
—
—
—
Unit
Adc
µAdc
µAdc
mAdc
Vdc
Vdc
dB
W
%
ARCHIVE INFORMATION
ACPR
—
- 42
- 40
dBc
MRFG35003MT1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
V
GS
V
DD
C10
C9
C8
C7
C6
C5
C4
R1
C2 C3
C13
C14
C15
C16
C17
C18
C19
C11 C12
Z5
RF
INPUT
Z1
Z2
C1
C28
C27
C21
Z3
Z4
C22
Z6 Z7 Z8 Z9 Z10 Z11
Z12 Z13
Z15
C23
Z14
Z16
C24
Z17
C20
C26
C25
Z18
RF
OUTPUT
ARCHIVE INFORMATION
Z1, Z18
Z2
Z3
Z4
Z5, Z15
Z6, Z8, Z10
Z7, Z9
0.125″
0.409″
0.326″
0.333″
0.527″
0.050″
0.097″
x 0.044″ Microstrip
x 0.044″ Microstrip
x 0.288″ Microstrip
x 0.572″ Microstrip
x 0.015″ Microstrip
x 0.025″ Microstrip
x 0.025″ Microstrip
Z11
Z12
Z13
Z14
Z16
Z17
PCB
0.082″ x 0.372″ Microstrip
0.169″ x 0.471″ Microstrip
0.196″ x 0.093″ Microstrip
0.313″ x 0.338″ Microstrip
0.200″ x 0.065″ Microstrip
0.472″ x 0.044″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
C1, C20
C2, C3, C11, C12
C4, C13
C5, C14
C6, C15
C7, C16
C8, C17
C9, C18
C10, C19
C21
C22, C27
C23, C28
C24
C25
C26
R1
Description
7.5 pF Chip Capacitors
3.9 pF Chip Capacitors (0805)
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
3.9
µF
Chip Capacitors
0.1
µF
Chip Capacitors
22
µF,
35 V Tantalum Surface Mount Capacitors
0.7 pF Chip Capacitor (0805)
0.2 pF Chip Capacitors (0805)
0.8 pF Chip Capacitors (0805)
1.0 pF Chip Capacitor
1.2 pF Chip Capacitor
0.5 pF Chip Capacitor
100
W
Chip Resistor
08051J0R7BBT
08051J0R2BBT
08051J0R8BBT
08051J1R0BBT
08051J1R2BBT
08051J0R5BBT
Part Number
100A7R5JP150X
08051J3R9BBT
100A100JP500X
100A101JP500X
100B101JP500X
100B102JP500X
Manufacturer
ATC
AVX
ATC
ATC
ATC
ATC
ATC
ATC
ATC
AVX
AVX
AVX
AVX
AVX
AVX
Newark
MRFG35003MT1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C6
C15
C5
C9
C10
C2
C8
C7
R1
C3
C11
C12
C4
C14
C13
C16
C17
C18
C19
C21
C22
C23
C24
ARCHIVE INFORMATION
C1
C25
C28
C27
C26
C20
MRFG35003M
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35003MT1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
0
IRL, INPUT RETURN LOSS (dB)
−10
−20
−30
−40
ACPR
−50
−60
−50
−60
P
out
, OUTPUT POWER (WATTS)
IRL
0
−10
−20
−30
−40
ARCHIVE INFORMATION
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
18
G T , TRANSDUCER GAIN (dB)
16
14
12
10
8
6
4
2
40
PAE
G
T
35
30
25
20
15
10
5
0.01
0.1
P
out
, OUTPUT POWER (WATTS)
1
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
PAE, POWER ADDED EFFICIENCY (%)
V
DS
= 12 Vdc, I
DQ
= 50 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.813é−106.27_,
Γ
L
= 0.734é−142.65_
45
MRFG35003MT1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
0.01
0.1
1
ACPR (dBc)
V
DS
= 12 Vdc, I
DQ
= 50 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.813é−106.27_,
Γ
L
= 0.734é−142.65_
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