Freescale Semiconductor

Technical Data

Document Number: MRF6S21100N

Rev. 3, 12/2008

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for W--CDMA base station applications with frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and

TD--SCDMA applications.

•

Typical 2--Carrier W--CDMA Performance: V

DD

= 28 Volts, I

DQ

= 1050 mA,

P

out

= 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 14.5 dB

Drain Efficiency — 25.5%

IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth

•

Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Qualified Up to a Maximum of 32 V

DD

Operation

•

Integrated ESD Protection

•

Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

•

225°C Capable Plastic Package

•

N Suffix Indicates Lead--Free Terminations. RoHS Compliant.

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S21100NR1

MRF6S21100NBR1

2110-

-2170 MHz, 23 W AVG., 28 V

2 x W-

-CDMA

LATERAL N-

-CHANNEL

RF POWER MOSFETs

CASE 1486-

-03, STYLE 1

TO-

-270 WB-

-4

PLASTIC

MRF6S21100NR1

CASE 1484-

-04, STYLE 1

TO-

-272 WB-

-4

PLASTIC

MRF6S21100NBR1

Table 1. Maximum Ratings

Rating

Symbol

V

DSS

V

GS

T

stg

T

C

T

J

Value

--0.5, +68

--0.5, +12

-- 65 to +150

150

225

Unit

Vdc

°C

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 73°C, 23 W CW

Symbol

R

θJC

Value

(2,3)

0.57

0.66

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

©

MRF6S21100NR1 MRF6S21100NBR1

1

RF Device Data

Freescale Semiconductor

LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12

RF Power Field Effect Transistors

LIFETIME BUY

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Class

1B (Minimum)

A (Minimum)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

3

Package Peak Temperature

260

Unit

°C

Table 5. Electrical Characteristics

(T

A

= 25°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(V

DS

= 68 Vdc, V

GS

= 0 Vdc)

I

DSS

I

DSS

I

GSS

—

10

1

μAdc

Symbol

Min

Typ

Max

Unit

LIFETIME BUY

Zero Gate Voltage Drain Leakage Current

(V

DS

= 28 Vdc, V

GS

= 0 Vdc)

Gate--Source Leakage Current

(V

GS

= 5 Vdc, V

DS

= 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V

DS

= 10 Vdc, I

D

= 330

μAdc)

Gate Quiescent Voltage

(V

DS

= 28 Vdc, I

D

= 1050 mAdc)

Fixture Gate Quiescent Voltage

(1)

(V

DD

= 28 Vdc, I

D

= 1050 mAdc, Measured in Functional Test)

Drain--Source On--Voltage

(V

GS

= 10 Vdc, I

D

= 3.3 Adc)

Reverse Transfer Capacitance

(V

DS

= 28 Vdc

±

30 mV(rms)ac @ 1 MHz, V

GS

= 0 Vdc)

V

GS(th)

V

GS(Q)

V

GG(Q)

V

DS(on)

1

—

2.2

—

2

2.8

3.1

0.24

3

—

4.4

—

Vdc

Dynamic Characteristics

(2)

C

rss

—

1.5

—

pF

Functional Tests

(In Freescale Test Fixture, 50 ohm system) V

DD

= 28 Vdc, I

DQ

= 1050 mA, P

out

= 23 W Avg., f1 = 2112.5 MHz, f2 =

2157.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @

±5

MHz

Offset. IM3 measured in 3.84 MHz Bandwidth @

±10

MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

G

ps

η

D

IM3

ACPR

IRL

13

24

--47

--50

—

14.5

25.5

--37

--40

--12

16

36

--35

--38

--10

dB

%

dBc

dB

Drain Efficiency

Intermodulation Distortion

Adjacent Channel Power Ratio

Input Return Loss

1. V

GG

= 11/10 x V

GS(Q)

. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part is internally matched both on input and output.

MRF6S21100NR1 MRF6S21100NBR1

2

RF Device Data

Freescale Semiconductor

LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12

V

BIAS

+

R1

C1

R2

C2

B1

C3

C4

Z12

C5

C6

V

SUPPLY

Z5

RF

INPUT

Z6

Z1

C7

Z2

Z3

Z4

DUT

Z11

Z7

Z8

Z9

C9

Z10

RF

OUTPUT

C8

V

SUPPLY

C10

C11

C12

LIFETIME BUY

Z1, Z10

Z2

Z3

Z4

Z5

Z6

0.743″ x 0.084″ Microstrip

0.893″ x 0.084″ Microstrip

0.175″ x 0.084″ Microstrip

0.420″ x 0.800″ Microstrip

1.231″ x 0.040″ Microstrip

0.100″ x 0.880″ Microstrip

Z7

Z8

Z9

Z11, Z12

PCB

0.259″ x 0.880″ Microstrip

0.215″ x 0.230″ Microstrip

0.787″ x 0.084″ Microstrip

1.171″ x 0.120″ Microstrip

Arlon CuClad 250GX--0300--55--22, 0.030″,

ε

r

= 2.5

Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic

Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values

Part

Ferrite Bead

10

μF,

35 V Tantalum Capacitor

0.01

μF

Chip Capacitor

5.1 pF Chip Capacitors

10

μF,

50 V Chip Capacitors

10 pF Chip Capacitor

1.1 pF Chip Capacitor

5.1 pF Chip Capacitor (MRF6S21100NR1)

8.2 pF Chip Capacitor (MRF6S21100NBR1)

1 kΩ, 1/4 W Chip Resistor

10 kΩ, 1/4 W Chip Resistor

10

Ω,

1/4 W Chip Resistor

Description

Part Number

25008051107Y0

T491D106K035AT

C1825C103J1GAC

ATC100B5R1BT500XT

GRM55DR61H106KA88L

ATC100B100BT500XT

ATC100B1R1BT500XT

ATC100B5R1BT500XT

ATC100B8R2BT500XT

CRCW12061001FKEA

CRCW12061002FKEA

CRCW120610R0FKEA

Manufacturer

Fair--Rite

Kemet

ATC

Murata

ATC

Vishay

B1

C1

C2

C3, C4, C10

C5, C6, C11, C12

C7

C8

C9

R1

R2

R3

MRF6S21100NR1 MRF6S21100NBR1

RF Device Data

Freescale Semiconductor

3

LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12

R3

B1 R3

R1

R2

C1

C3

C2

C5

C6

C7

C8

C9

LIFETIME BUY

MRF6S21100N/NB, Rev. 3

C10

C11 C12

Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout

MRF6S21100NR1 MRF6S21100NBR1

4

RF Device Data

Freescale Semiconductor

LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12

C4

CUT OUT AREA

TYPICAL CHARACTERISTICS

V

DD

= 28 Vdc, P

out

= 22.5 W (Avg.), I

DQ

= 1050 mA

2--Carrier W--CDMA, 10 MHz Carrier Spacing

3.84 MHz Channel Bandwidth, PAR = 8.5 dB

@ 0.01% Probability (CCDF)

14.6

G

ps

, POWER GAIN (dB)

14.4

14.2

14

13.8

13.6

13.4

13.2

η

D

26

25

24

G

ps

IM3

ACPR

IRL

2100

2120

2140

2160

2180

2200

f, FREQUENCY (MHz)

IM3 (dBc), ACPR (dBc)

--31

--34

--37

--40

--43

--46

2220 2240

--9

--10

--11

--12

--13

--14

13

2060 2080

LIFETIME BUY

Figure 3. 2-

-Carrier W-

-CDMA Broadband Performance @ P

out

= 22.5 Watts Avg.

14

13.8

G

ps

, POWER GAIN (dB)

13.6

13.4

13.2

13

12.8

12.6

12.4

η

D

37

36

35

V

DD

= 28 Vdc, P

out

= 45 W (Avg.), I

DQ

= 1050 mA

2--Carrier W--CDMA, 10 MHz Carrier Spacing

3.84 MHz Channel Bandwidth, PAR = 8.5 dB

@ 0.01% Probability (CCDF)

IM3

IM3 (dBc), ACPR (dBc)

--24

--26

--28

--30

--32

--9

--10

--11

--12

--13

--14

ACPR

IRL

2100

2120

2140

2160

2180

2200

f, FREQUENCY (MHz)

12.2

2060 2080

--34

2220 2240

Figure 4. 2-

-Carrier W-

-CDMA Broadband Performance @ P

out

= 45 Watts Avg.

16

15

--10

IMD, THIRD ORDER

INTERMODULATION DISTORTION (dBc)

V

DD

= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz

Two--Tone Measurements, 10 MHz Tone Spacing

I

DQ

= 1575 mA

1312 mA

1050 mA

787 mA

G

ps

, POWER GAIN (dB)

--20

--30

14

13

12

11

10

IRL, INPUT RETURN LOSS (dB)

G

ps

34

η

D

, DRAIN

EFFICIENCY (%)

14.2

38

1575 mA

I

DQ

= 525 mA

--40

1312 mA

--50

787 mA

--60

0.1

1

10

100

300

P

out

, OUTPUT POWER (WATTS) PEP

1050 mA

525 mA

V

DD

= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz

Two--Tone Measurements, 10 MHz Tone Spacing

0.1

1

10

100

300

P

out

, OUTPUT POWER (WATTS) PEP

Figure 5. Two-

-Tone Power Gain versus

Output Power

Figure 6. Third Order Intermodulation Distortion

versus Output Power

MRF6S21100NR1 MRF6S21100NBR1

RF Device Data

Freescale Semiconductor

5

LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12

14.8

27

η

D

, DRAIN

EFFICIENCY (%)

IRL, INPUT RETURN LOSS (dB)

15

28

参数名称	属性值
晶体管类型	LDMOS
频率	2.11GHz ~ 2.16GHz
增益	14.5dB
电压 - 测试	28V
电流 - 测试	1.05A
功率 - 输出	23W
电压 - 额定	68V
封装/外壳	TO-272-4
供应商器件封装	TO-272 WB-4

MRF6S21100MBR1

MRF6S21100MBR1概述

MRF6S21100MBR1规格参数

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