Freescale Semiconductor
Technical Data
Document Number: MRF6S19100N
Rev. 3, 12/2010
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
•
Typical 2--Carrier N--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 950 mA,
P
out
= 22 Watts Avg., f = 1987.5 MHz, IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dBc in 30 kHz Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
N Suffix Indicates Lead--Free Terminations
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MRF6S19100NR1
MRF6S19100NBR1
1930-
-1990 MHz, 22 W AVG., 28 V
2 x N-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 1486-
-03, STYLE 1
TO-
-270 WB-
-4
PLASTIC
MRF6S19100NR1
CASE 1484-
-04, STYLE 1
TO-
-272 WB-
-4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +68
--0.5, +12
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
Symbol
R
θJC
Value
(2,3)
0.61
0.65
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
MRF6S19100NR1 MRF6S19100NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF Power Field Effect Transistors
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
LIFETIME BUY
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 950 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.24
3
4
—
Vdc
Vdc
Vdc
Dynamic Characteristics
(1)
C
rss
—
1.5
—
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 950 mA, P
out
= 22 W Avg., f1 = 1987.5 MHz, f2 =
1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
G
ps
η
D
IM3
ACPR
IRL
13
24
--47
--60
—
14.5
25.5
--37
--51
--12
16
36
--35
--48
--10
dB
%
dBc
dBc
dB
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S19100NR1 MRF6S19100NBR1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
V
BIAS
+
C1
R1
R2
C2
C3
C4
Z12
RF
INPUT
R3
Z1
C7
Z2
Z3
Z4
DUT
Z11
Z6
Z7
Z8
Z9
C8
Z10
C5
C6
V
SUPPLY
Z5
RF
OUTPUT
V
SUPPLY
C9
C10
C11
LIFETIME BUY
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″ x 0.084″ Microstrip
0.818″ x 0.084″ Microstrip
0.165″ x 0.386″ Microstrip
0.505″ x 0.800″ Microstrip
0.323″ x 0.040″ Microstrip
0.160″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
0.319″ x 0.880″ Microstrip
0.355″ x 0.215″ Microstrip
0.661″ x 0.084″ Microstrip
1.328″ x 0.120″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
10
μF,
35 V Tantalum Capacitor
100 nF Chip Capacitor
5.1 pF Chip Capacitors
9.1 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
1 kΩ, 1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
T491D106K035AT
C12065C104KAT
ATC100B5R1BT500XT
ATC100B9R1BT500XT
GRM55DR61H106KA88L
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Kemet
ATC
ATC
ATC
Murata
Vishay
Vishay
Vishay
C1
C2
C3, C7
C4, C8, C9
C5, C6, C10, C11
R1
R2
R3
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R2 C2
C3
R1
C1
R3
C5
C6
C7
C8
MRF6S19100N/NB, Rev. 5
C9
C10 C11
Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout
MRF6S19100NR1 MRF6S19100NBR1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C4
LIFETIME BUY
CUT OUT AREA
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
15.8
15.7
15.6
G
ps
, POWER GAIN (dB)
15.5
15.4
15.3
15.2
15.1
15
14.9
ACPR
IM3
IRL
η
D
27
26.5
26
25.5
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 950 mA
2--Carrier N--CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
G
ps
IM3 (dBc), ACPR (dBc)
--30
--36
--42
--48
--54
--12
--16
--20
--24
--28
--32
--36
--60
14.8
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
LIFETIME BUY
Figure 3. 2-
-Carrier N-
-CDMA Broadband Performance @ P
out
= 22 Watts Avg.
15.4
15.3
15.2
G
ps
, POWER GAIN (dB)
15.1
15
14.9
14.8
14.7
14.6
14.5
ACPR
IM3
IRL
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 40 W (Avg.)
I
DQ
= 950 mA, 2--Carrier N--CDMA
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
35.5
35
34.5
34
--25
--30
--35
--40
--45
η
D
, DRAIN
EFFICIENCY (%)
36
IM3 (dBc), ACPR (dBc)
--10
--15
--20
--25
--30
--35
--40
--50
14.4
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2-
-Carrier N-
-CDMA Broadband Performance @ P
out
= 40 Watts Avg.
17
16
1190 mA
950 mA
710 mA
475 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--20
--30
--40
--50
710 mA
--60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
950 mA
I
DQ
= 1425 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
1425 mA
G
ps
, POWER GAIN (dB)
15
14
13
12
11
I
DQ
= 475 mA
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
25
1190 mA
100
300
Figure 5. Two-
-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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