Freescale Semiconductor
Technical Data
MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration
PCN12895 for more details.
Document Number: MRF6P3300H
Rev. 2, 10/2008
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with fre‐
quencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large- signal, common- source amplifier applica‐
tions in 32 volt analog or digital television transmitter equipment.
•
Typical Narrowband Two-T one Performance @ 860 MHz: V
DD
= 32 Volts,
I
DQ
= 1600 mA, P
out
= 270 Watts PEP
Power Gain — 20.2 dB
Drain Efficiency — 44.1%
IMD — -30.8 dBc
•
Typical Narrowband DVB-T OFDM Performance @ 860 MHz: V
DD
=
32 Volts, I
DQ
= 1600 mA, P
out
= 60 Watts Avg., 8K Mode, 64 QAM
Power Gain — 20.4 dB
Drain Efficiency — 29%
ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large-Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Designed for Push-Pull Operation Only
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRF6P3300HR3
MRF6P3300HR5
470-860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 375G-04, STYLE 1
NI-860C3
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
-0.5, +68
-0.5, +12
-65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
Symbol
R
θJC
0.23
0.24
0.27
0.27
Value
(2,3)
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
MRF6P3300HR3 MRF6P3300HR5
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Class
3B (Minimum)
C (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(4)
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(4)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 350
μAdc)
Gate Quiescent Voltage
(V
DD
= 32 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 32 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.4
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2.2
2.8
0.22
3
4
0.3
Vdc
Vdc
Vdc
Functional Tests
(3)
(In Freescale Narrowband Test Fixture, 50 ohm system) V
DD
= 32 Vdc, I
DQ
= 1600 mA, P
out
= 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
P
out
@ 1 dB Compression Point, CW
(f = 860 MHz)
1.
2.
3.
4.
Each side of the device measured separately.
Part internally matched both on input and output.
Measurement made with device in push-pull configuration.
Drains are tied together internally as this is a total device value.
G
ps
η
D
IMD
IRL
P1dB
19
41
—
—
—
20.2
44.1
-30.8
-24
320
23
—
-28
-9
—
dB
%
dBc
dB
W
MRF6P3300HR3 MRF6P3300HR5
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
R1
V
BIAS
B1
+
R3
COAX1
Z4
Z2
RF
INPUT
Z1
C4
Z3
C5
C6
Z7
DUT
C10 C11
C12
Z6
Z8
C1
C2
C3
Z19
Z10
Z12
Z14
Z16
C14
RF
OUTPUT
Z18
C23
+
C15
C16
+
C18
C17
V
SUPPLY
COAX3
Z9
R2
Z5
Z13
Z15
Z17
C13
ARCHIVE INFORMATION
COAX2
V
BIAS
+
C9
C7
C8
B2
Z20
Z11
+
C24
C19
C20
+
COAX4
V
SUPPLY
C21
C22
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.401″ x 0.081″ Microstrip
0.563″ x 0.101″ Microstrip
1.186″ x 0.058″ Microstrip
0.416″ x 0.727″ Microstrip
0.191″ x 0.507″ Microstrip
1.306″ x 0.150″ Microstrip
Z12, Z13
Z14, Z15
Z16, Z17
Z18
Z19, Z20
PCB
0.225″ x 0.507″ Microstrip
0.440″ x 0.435″ Microstrip
0.123″ x 0.215″ Microstrip
0.401″ x 0.081″ Microstrip
0.339″ x 0.165″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″,
ε
r
= 2.55
Figure 1. 820-900 MHz Narrowband Test Circuit Schematic
Table 5. 820-900 MHz Narrowband Test Circuit Component Designations and Values
Part
B1, B2
C1, C9
C2, C7, C17, C21
C3, C8, C16, C20
C4, C5, C13, C14
C6, C12
C10
C11
C15, C19
C18, C22
C23, C24
Coax1, 2, 3, 4
R1, R2
R3
Description
Ferrite Beads, Short
1.0
μF,
50 V Tantulum Chip Capacitors
0.1
μF,
50 V Chip Capacitors
1000 pF Chip Capacitors
100 pF Chip Capacitors
8.2 pF Chip Capacitors
9.1 pF Chip Capacitor
1.8 pF Chip Capacitor
47
μF,
50 V Electrolytic Capacitors
470
μF,
63 V Electrolytic Capacitors
22 pF Chip Capacitors
50
Ω,
Semi Rigid Coax, 2.06″ Long
10
Ω,
1/4 W Chip Resistors
1 kΩ, 1/4 W Chip Resistor
Part Number
2743019447
T491C105K050AT
CDR33BX104AKYS
ATC100B102JT50XT
ATC100B101JT500XT
ATC100B8R2JT500XT
ATC100B9R1BT500XT
ATC100B1R8BT500XT
EMVY500ADA470MF80G
ESME630ELL471MK25S
ATC100B220FT500XT
UT-141A-TP
CRCW120610R0FKEA
CRCW12061001FKEA
Kemet
Kemet
ATC
ATC
ATC
ATC
ATC
Nippon
United Chemi-Con
ATC
Micro-Coax
Vishay
Vishay
Manufacturer
Fair-Rite
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C1
C23
V
GG
R3
C2 C3
R1
B1
C15
C18
V
DD
C16
C17
COAX1
COAX3
MRF6P9220, Rev. 2
C4
CUT OUT AREA
C14
C12
ARCHIVE INFORMATION
C5
C6
C10 C11
C13
COAX2
COAX4
R2
V
GG
C7
C8
B2
C24
C20
V
DD
C21
C22
C9
C19
Figure 2. 820-900 MHz Narrowband Test Circuit Component Layout
MRF6P3300HR3 MRF6P3300HR5
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL NARROWBAND CHARACTERISTICS
21
20.5
G
ps
, POWER GAIN (dB)
20
19.5
19
18.5
18
17.5
17
ACPR
V
DD
= 32 Vdc, P
out
= 60 W (Avg.)
I
DQ
= 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
G
ps
η
D
, DRAIN
EFFICIENCY (%)
-5
ACPR (dBc)
-10
-15
-20
-25
IRL, INPUT RETURN LOSS (dB)
η
D
31
29
27
25
IRL
-45
-50
-55
-60
-65
900
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance @ 60 Watts Avg.
21
44
η
D
G
ps
42
40
38
-45
ACPR (dBc)
-47
IRL
ACPR
-51
-53
900
-49
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
V
DD
= 32 Vdc, P
out
= 120 W (Avg.)
20.5 I
DQ
= 1600 mA, 8K Mode OFDM
64 QAM Data Carrier
20 Modulation, 5 Symbols
19.5
19
18.5
18
17.5
17
820
830
840
850
860
870
880
890
f, FREQUENCY (MHz)
-5
-10
-15
-20
-25
Figure 4. Single-Carrier OFDM Broadband Performance @ 120 Watts Avg.
21.5
21
G
ps
, POWER GAIN (dB)
20.5
20
19.5
19
18.5
18
17.5
5
10
I
DQ
= 800 mA
V
DD
= 32 Vdc
f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
100
P
out
, OUTPUT POWER (WATTS) PEP
600
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
2400 mA
2000 mA
1600 mA
1200 mA
-10
V
DD
= 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-20
-30
I
DQ
= 2400 mA
800 mA
-40
2000 mA
-50
-60
5
1600 mA
1200 mA
10
100
P
out
, OUTPUT POWER (WATTS) PEP
600
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
820
830
840
850
860
870
880
890
IRL, INPUT RETURN LOSS (dB)
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
