Freescale Semiconductor
Technical Data
Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF5S9101
Rev. 3, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
•
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 700 mA, P
out
=
100 Watts CW, Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 650 mA, P
out
=
50 Watts Avg., Full Frequency Band (869 - 894 MHz and 921 - 960 MHz)
Power Gain — 18 dB
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 2.3% rms
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,
@ f = 960 MHz
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S9101MR1
MRF5S9101MBR1
ARCHIVE INFORMATION
869 - 960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S9101MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S9101MBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +15
427
2.44
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
Symbol
R
θJC
Value
(1,2)
0.41
0.47
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S9101MR1 MRF5S9101MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
ARCHIVE INFORMATION
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
Dynamic Characteristics
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.8
3.7
0.21
7
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
C
oss
C
rss
—
—
70
2.2
—
—
pF
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, P
out
= 100 W, I
DQ
= 700 mA, f = 960 MHz
Power Gain
G
ps
16
17.5
19
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
1. Part is internally input matched.
η
D
IRL
P1dB
56
—
100
60
- 15
110
—
-9
—
dB
%
dB
W
(continued)
MRF5S9101MR1 MRF5S9101MBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50
οhm
system) V
DD
= 28 Vdc, P
out
= 50 W Avg.,
I
DQ
= 650 mA, 869 MHz<Frequency<894 MHz, 920 MHz<Frequency<960 MHz
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
18
42
2.3
- 63
- 78
—
—
—
—
—
dB
%
% rms
dBc
dBc
ARCHIVE INFORMATION
MRF5S9101MR1 MRF5S9101MBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
Z11
V
BIAS
C1
R1
R2
C4
C7
Z13
R3
C16
RF
INPUT
DUT
Z10
Z9
C19
C10
Z8
Z7
C17
Z1
C11
C12
C15
C18
C20
C13
Z2
C14
Z3
Z4
Z5
Z6
RF
OUTPUT
C8
C5
C2
+
C21
V
SUPPLY
ARCHIVE INFORMATION
C9
C6
C3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.698″
0.720″
0.195″
0.524″
0.233″
0.560″
0.095″
0.472″
0.384″
x 0.827″ Microstrip
x 0.788″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
x 0.827″ Microstrip
x 0.087″ Microstrip
x 0.087″ Microstrip
Z10
Z11, Z12*
Z13*
PCB
1.491″ x 0.087″ Microstrip
1.6″ x 0.089″ Microstrip
(quarter wave length for supply purpose)
1.2″ x 0.059″ Microstrip
(quarter wave length for bias purpose)
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
*Variable for tuning
Figure 1. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Schematic
Table 6. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Designations and Values
Part
C1, C2, C3
C4, C5, C6
C7, C8, C9
C10, C11
C12, C13
C14, C15, C16, C17
C18
C19
C20
C21
R1, R2
R3
Description
4.7
mF
Chip Capacitors (2220)
10 nF 200B Chip Capacitors
33 pF 100B Chip Capacitors
22 pF 100B Chip Capacitors
10 pF 100B Chip Capacitors
8.2 pF 100B Chip Capacitors
5.6 pF 100B Chip Capacitor
4.7 pF 100B Chip Capacitor
3.9 pF 100B Chip Capacitor
220
mF,
50 V Electrolytic Capacitor, Axial
10 kW, 1/4 W Chip Resistors (1206)
10
W,
1/4 W Chip Resistor (1206)
Part Number
GRM55ER7H475KA01
200B103MW
100B330JW
100B220GW
100B100GW
100B8R2CW
100B5R6CW
100B4R7BW
100B3R9BW
516D227M050NP7B
Manufacturer
Murata
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Sprague
MRF5S9101MR1 MRF5S9101MBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Z12
C21
VGG
C1
R1
C4 C7
R2
C8
C5
VDD
C2
C10
C19
C17
CUT OUT AREA
R3 C16
C13
C14
C11
C18
C12
C20
C15
ARCHIVE INFORMATION
C3
MRF5S9101N
900 MHz
Rev 2
C9
C6
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S9101MR1(MBR1) 900 MHz Test Circuit Component Layout
MRF5S9101MR1 MRF5S9101MBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
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