Freescale Semiconductor
Technical Data
Document Number: MRF5S19100H
Rev. 5, 10/2008
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2--Carrier N--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1000 mA,
P
out
= 22 Watts Avg., f = 1987.5 MHz, IS--95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 13.9 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — --36.5 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — --50.7 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF5S19100HR3
MRF5S19100HSR3
1930-
-1990 MHz, 22 W AVG., 28 V
2 x N-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
CASE 465-
-06, STYLE 1
NI-
-780
MRF5S19100HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF5S19100HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
--0.5, +65
--0.5, +15
269
1.54
-- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
Symbol
R
θJC
Value
(1)
0.64
0.65
Unit
°C/W
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF5S19100HR3 MRF5S19100HSR3
1
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 240
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1000 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2.4 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.4 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
2.2
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
—
—
—
—
2.7
3.7
0.26
6.3
—
—
—
—
Vdc
Vdc
Vdc
S
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 22 W Avg., f1 = 1987.5 MHz, f2 =
1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth @
±885
kHz Offset. IM3
measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
12.5
24
—
—
—
13.9
25.5
--36.5
--50.7
--13
—
—
--35
--48
--9
dB
%
dBc
dBc
dB
MRF5S19100HR3 MRF5S19100HSR3
2
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
B1
V
BIAS
R1
R2
+
+
C7
+
+
W1
+
C13
V
SUPPLY
C11
C12
+
C14
C3
C4
C5
R3
C8
C9
C10
R4
C6
Z9
Z6
RF
INPUT
Z1
Z2
C15
Z3
C16
C1
Z4
Z5
Z7
DUT
Z8
Z10
Z11
Z12
C2
Z13
Z14
C17
RF
OUTPUT
ARCHIVE INFORMATION
Z1, Z3
Z2
Z4
Z5
Z6
Z7
Z8
0.140″ x 0.080″ Microstrip
0.450″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.636″ x 0.141″ Microstrip
0.650″ x 0.050″ Microstrip
0.320″ x 1.299″ Microstrip
0.091″ x 1.133″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.590″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.450″ x 0.141″ Microstrip
0.490″ x 0.080″ Microstrip
0.085″ x 0.080″ Microstrip
1.124″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4, C12
C5, C11
C6
C7
C8
C9, C10, C13, C14
C15
C16
C17*
R1
R2
R3, R4
W1
Short RF Bead
22 pF Chip Capacitor
10 pF Chip Capacitor
1
μF,
50 V Tantalum Capacitor
0.1
μF
Chip Capacitors
1K pF Chip Capacitors
2.7 pF Chip Capacitor
4.3 pF Chip Capacitor
10
μF,
35 V Tantalum Capacitor
22
μF,
35 V Tantalum Capacitors
0.6 – 4.5 Gigatrim Variable Capacitor
2.2 pF Chip Capacitor
0.3 pF Chip Capacitor
1 kΩ, 1/4 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
12
Ω,
1/4 W Chip Resistors
1 turn 14 gauge wire
Description
Part Number
2743019447
ATC100B220CT500XT
ATC100B100CT500XT
T494C105J050AT
CDR33BX104AKYS
ATC100B102JT500XT
ATC100B2R7BT500XT
ATC100B4R3JT500XT
T494D106J035AT
T494X226J035AT
272715L
ATC100B2R2BT500XT
ATC100B0R3BT500XT
CRCW12061001FKEA
CRCW12065600FKEA
CRCW120612R0FKEA
Manufacturer
Fair--Rite
ATC
ATC
Kemet
Kemet
ATC
ATC
ATC
Kemet
Kemet
Johanson
ATC
ATC
Vishay
Vishay
Vishay
* Need for part will vary from fixture to fixture.
MRF5S19100HR3 MRF5S19100HSR3
Freescale Semiconductor
RF Product Device Data
3
ARCHIVE INFORMATION
MRF5S19100
Rev 1
C6
VGG
R1
B1
R2 C3 C4
C1
C5
CUT OUT AREA
C7
W1
C8
C9 C10
R3
C11 C12
R4
C13
C2
C14
VDD
C15
C16
C17
ARCHIVE INFORMATION
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5S19100HR3(HSR3) Test Circuit Component Layout
MRF5S19100HR3 MRF5S19100HSR3
4
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
G
ps
η
D
η
D
, DRAIN
EFFICIENCY (%)
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
IRL
IM3
ACPR
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 1000 mA
2--Carrier N--CDMA, 2.5 MHz Carrier Spacing
40
35
30
25
20
--35
--40
--45
--50
IM3 (dBc), ACPR (dBc)
--30
--10
--15
--20
--25
--30
--35
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. 2-
-Carrier N-
-CDMA Broadband Performance
16
15
14
13
530 mA
12
11
10
1
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
I
DQ
= 1500 mA
1300 mA
1000 mA
760 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--15
--20
--25
--30
--35
--40
--45
--50
--55
1
G ps , POWER GAIN (dB)
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
1300 mA
I
DQ
= 1500 mA
530 mA
1000 mA
760 mA
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 4. Two-
-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
--25
Pout , OUTPUT POWER (dBm)
--30
--35
--40
--45
--50
--55
0.1
1
TWO--TONE SPACING (MHz)
10
40
5th Order
7th Order
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
3rd Order
58
57
56
55
54
53
52
51
50
49
48
47
46
32
33
34
35
36
37
P3dB = 51.98 dBm (157.81 W)
P1dB = 51.3 dBm (135.01 W)
Actual
Ideal
V
DD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8
μsec(on),
1 msec(off)
f = 1960 MHz
38
39
40
41
42
43
44
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S19100HR3 MRF5S19100HSR3
Freescale Semiconductor
RF Product Device Data
5
ARCHIVE INFORMATION
5
--55
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040
IRL, INPUT RETURN LOSS (dB)
模拟与混合信号
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