Freescale Semiconductor
Technical Data
Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF5S19060M
Rev. 5, 5/2006
RF Power Field Effect Transistors
MRF5S19060MR1
MRF5S19060MBR1
1990 MHz, 12 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 1930 to 1990 MHz. The high gain and broadband
performance of these devices make them ideal for large - signal, common -
source amplifier applications in 28 Volt base station equipment.
•
Typical 2 - carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 750 mA,
P
out
= 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg.
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S19060MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S19060MBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
218.8
1.25
- 65 to +175
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 12 W CW
Symbol
R
θJC
Value
(1)
0.80
Unit
°C/W
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19060MR1 MRF5S19060MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
C (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 225
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 750 mAdc)
Drain - Source On - Voltage
(V
GS
= 5 Vdc, I
D
= 2.25 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.25 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
—
3.8
0.26
5
3.5
—
—
—
Vdc
Vdc
Vdc
S
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
ARCHIVE INFORMATION
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 12 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
12.5
21
—
—
—
14
23
- 37
- 51
- 12
16
—
- 35
- 48
-9
dB
%
dBc
dBc
dB
(continued)
MRF5S19060MR1 MRF5S19060MBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Typical RF Performance
(50 ohm system)
Pulse Peak Power
(V
DD
= 28 Vdc, 1 - Tone CW Pulsed, I
DQ
= 750 mA, t
ON
= 8
μs,
1% Duty Cycle)
Video Bandwidth
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 750 mA, Tone Spacing =
1 MHz to VBW,
Δ
IM3<2dB)
P
sat
—
110
—
W
Symbol
Min
Typ
Max
Unit
VBW
—
35
—
MHz
ARCHIVE INFORMATION
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
Z11
V
BIAS
R1
R2
+
C1
C2
Z6
C3
+
C4
+
C5
+
C6
V
SUPPLY
R3
RF
INPUT
RF
OUTPUT
Z1
C7
Z2
Z3
Z4
Z5
Z7
Z8
Z9
C12
C10
C11
Z10
DUT
C8
C9
ARCHIVE INFORMATION
Z12
+
C13
C14
+
C15
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
0.250″
0.500″
0.500″
0.515″
0.480″
1.140″
0.600″
x 0.083″
x 0.083″
x 0.083″
x 0.083″
x 1.000″
x 0.080″
x 1.000″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z8*
Z9*
Z10
Z11
Z12
PCB
0.420″ x 0.083″ Microstrip
0.975″ x 0.083″ Microstrip
0.250″ x 0.083″ Microstrip
0.700″ x 0.080″ Microstrip
0.700″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic
Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values
Part
C1
C2
C3, C7, C12, C13
C4, C5, C14, C15
C6
C8
C9
C10
C11
R1, R2
R3
Description
1
μF,
35 V Tantalum Capacitor
10 pF 100B Chip Capacitor
6.8 pF 100B Chip Capacitors
10
μF,
35 V Tantalum Capacitors
220
μF,
63 V Electrolytic Capacitor, Radial
0.8 pF 100B Chip Capacitor
1.5 pF 100B Chip Capacitor
1.0 pF 100B Chip Capacitor
0.2 pF 100B Chip Capacitor
10 kW, 1/4 W Chip Resistors (1206)
10
W,
1/4 W Chip Resistors (1206)
Part Number
TAJB105K35
100B10R0CW
100B6R8CW
TAJD106K035
13668221
100B0R8BW
100B1R5BW
100B1R0BW
100B0R2BW
Manufacturer
AVX
ATC
ATC
AVX
Philips
ATC
ATC
ATC
ATC
MRF5S19060MR1 MRF5S19060MBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
V
GG
R1
R2 C1 C2
C3
V
DD
C4 C5
R3
CUT OUT AREA
C6
C7
C8
C9
C10
C11
C12
ARCHIVE INFORMATION
C14
C15
C13
MRF5S19060M
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19060MR1/MBR1 Test Circuit Component Layout
MRF5S19060MR1 MRF5S19060MBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
stm32/stm8
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