Freescale Semiconductor
Technical Data
Document Number: MRF5P21240HR6
Rev. 2, 10/2008
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
•
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2200 mA, P
out
= 52 Watts Avg., f = 2157.5 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 24%
IM3 @ 10 MHz Offset — --36 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --39 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P21240HR6
2110-
-2170 MHz, 52 W AVG., 28 V
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
ARCHIVE INFORMATION
CASE 375D-
-05, STYLE 1
NI-
-1230
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
CW
Value
--0.5, +65
--0.5, +15
603
3.4
-- 65 to +150
150
200
200
1.18
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 180 W CW
Case Temperature 77°C, 52 W CW
Symbol
R
θJC
Value
(1,2)
0.29
0.32
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF5P21240HR6
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
M3 (Minimum)
C6 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
ARCHIVE INFORMATION
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(3)
(V
DS
= 28 Vdc, I
D
= 2200 mAdc)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(1)
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
(1,2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
2.75
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.8
3.8
0.26
7.5
4
5
0.3
—
Vdc
Vdc
Vdc
S
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 2200 mA, P
out
= 52 W Avg., f1 = 2157.5 MHz,
f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
G
ps
η
D
IM3
ACPR
IRL
12
22.5
—
—
—
13
24
--36
--39
--12
—
—
--34
--37
--9
dB
%
dBc
dBc
dB
MRF5P21240HR6
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
B1
V
BIAS
R4
+
C17
+
C15
C13
C9
R1
C5
Z11
Z3
C1
Z7
Z4
C2
Z6
Z10
Z14
Z18
Z20
C3
Z16
R2
C6
+
C23
+
C24
C7
C11
+
C25
+
C26
+
Z22
DUT
Z5
Z9
Z13
Z17
Z19
C4
Z21
Z8
Z15
+
C19
+
C20
C8
C12
+
C21
+
C22
+
V
SUPPLY
C27
RF
INPUT
Z1
Z2
Z23
Z24
RF
OUTPUT
ARCHIVE INFORMATION
V
BIAS
R3
+
C18
+
C16
C14
C10
V
SUPPLY
C28
Z1
Z2, Z23
Z3, Z22
Z4, Z21
Z5, Z6
Z7, Z8
Z9, Z10
0.898″ x 0.080″ Microstrip
0.775″ x 0.136″ Microstrip
0.060″ x 0.080″ Microstrip
1.867″ x 0.080″ Microstrip
0.443″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.490″ x 0.540″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z24
PCB
1.270″ x 0.058″ Microstrip
0.250″ x 0.500″ Microstrip
0.850″ x 0.150″ Microstrip
0.535″ x 0.390″ Microstrip
0.218″ x 0.080″ Microstrip
0.825″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5P21240HR6 Test Circuit Schematic
Table 5. MRF5P21240HR6 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10, C11, C12
C13, C14
C15, C16
C17, C18
C19, C20, C21, C22
C23, C24, C25, C26
C27, C28
R1, R2
R3, R4
Description
Short Ferrite Beads
18 pF Chip Capacitors
6.8 pF Chip Capacitors
0.1
μF
Chip Capacitors
1000 pF Chip Capacitors
4.7
μF
Tantalum Capacitors
10
μF,
50 V Electrolytic Capacitors
22
μF
Tantalum Capacitors
100
μF,
50 V Electrolytic Capacitors
1 kΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistors
Part Number
2743019447
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ATC100B6R8JCT500XT
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ATC100B102JCT500XT
T491C475M050AT
EMVY500ADA100MF55G
T491X226K035
EMVY500ADA101MHA0G
CRCW12061001FKEA
CRCW120610R0FKEA
Manufacturer
Fair--Rite
ATC
ATC
Kemet
ATC
Kemet
Nippon Chemi--Con
Kemet
Nippon Chemi--Con
Vishay
Vishay
MRF5P21240HR6
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
B2
Z12
MRF5P21240 Rev. 5
C17
C15
C13 C9
B1 R1
C19
C8
C5
C20
C22
C12
C27
R4
C21
C1
CUT OUT AREA
C4
ARCHIVE INFORMATION
C2
C24
C3
R3
B2 R2
C18
C16
C14 C10
C6
C25
C23
C7
C26 C11
C28
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5P21240HR6 Test Circuit Component Layout
MRF5P21240HR6
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
15
14
13
G ps , POWER GAIN (dB)
12
11
IRL
IM3
ACPR
2100
2120
2140
2160
2180
9
8
7
6
5
2080
G
ps
η
D
V
DD
= 28 Vdc, P
out
= 52 W (Avg.), I
DQ
= 2200 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
40
35
30
25
20
--25
--30
--35
--40
--45
--50
2200
η
D
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
--5
--10
--15
--20
--25
--30
10
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 3. 2-
-Carrier W-
-CDMA Broadband Performance
@ P
out
= 52 Watts Avg.
14
2420 mA
13.5
2200 mA
IMD,THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 2640 mA
--25
--30
--35
--40
--45
2200 mA
I
DQ
= 2640 mA
2420 mA
13
1980 mA
1760 mA
12.5
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
12
2
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
--50 1980 mA
1760 mA
--55
2
V
DD
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
100
300
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two-
-Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
--25
3rd Order
--30
--35
--40
--45
--50
--55
0.1
5th Order
7th Order
V
DD
= 28 Vdc, P
out
= 240 W (PEP), I
DQ
= 2200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
TWO--TONE SPACING (MHz)
10
30
60
59
Pout , OUTPUT POWER (dBm)
58
57
56
55
54
53
52
51
50
36
37
38
39
40
V
DD
= 28 Vdc, I
DQ
= 2200 mA
Pulsed CW, 8
μsec(on),
1 msec(off)
f = 2140 MHz
41
42
43
44
45
46
P
in
, INPUT POWER (dBm)
P3dB = 55.03 dBm (318.24 W)
P1dB = 54.36 dBm (272.9 W)
Actual
Ideal
IMD, INTERMODULATION DISTORTION (dBc)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5P21240HR6
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
G ps , POWER GAIN (dB)
传感器
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