Freescale Semiconductor
Technical Data
Document Number: MHW8227AN
Rev. 3, 5/2006
Gallium Arsenide
CATV Amplifier Module
Features
•
Specified for 79 - and 112 - Channel Loading
•
Excellent Distortion Performance
•
Higher Output Capability
•
Built - in Input Diode Protection
•
GaAs FET Transistor Technology
•
Unconditionally Stable Under All Load Conditions
•
Output Port Ring Wave Protection
Applications
•
CATV Systems Operating in the 47 to 870 MHz Frequency Range
•
Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
•
Driver Amplifier in Linear General Purpose Applications
Description
•
24 Vdc Supply, 47 to 870 MHz, CATV GaAs Forward Power Doubler
Amplifier Module
•
Replaced MHW8227A. There are no form, fit or function changes with this
part replacement.
•
RoHS Compliant
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Symbol
V
in
V
CC
T
C
T
stg
MHW8227AN
870 MHz
22.1 dB GAIN
112 - CHANNEL
GaAs CATV AMPLIFIER MODULE
ARCHIVE INFORMATION
CASE 1302 - 01, STYLE 1
Value
+70
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Table 2. ESD Maximum Ratings
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
200
2
Output Value
200
2
Unit
V
kV
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +45°C, 75
Ω
system unless otherwise noted)
Characteristic
Frequency Range
Power Gain
Slope
Gain Flatness (47 - 870 MHz, Peak - to - Valley)
Return Loss — Input
(Z
o
= 75 Ohms)
47 - 300 MHz
301 - 700 MHz
701 - 870 MHz
ORL
47 - 160 MHz
161 - 700 MHz
701 - 870 MHz
20
18
16
—
—
—
—
—
—
870 MHz
47 - 870 MHz
Symbol
BW
G
p
S
—
IRL
20
18
16
—
—
—
—
—
—
dB
Min
47
21.5
0
—
Typ
—
22.1
0.5
—
Max
870
22.7
1.2
0.7
Unit
MHz
dB
dB
dB
dB
Return Loss — Output
(Z
o
= 75 Ohms)
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MHW8227AN
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. Electrical Characteristics
(V
CC
= 24 Vdc, T
C
= +45°C, 75
Ω
system unless otherwise noted)
(continued)
Characteristic
Composite Second Order
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
Cross Modulation Distortion @ Ch 2
(V
out
= +48 dBmV/ch., FM = 55.25 MHz)
(V
out
= +48 dBmV/ch., FM = 55.25 MHz)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
Composite Triple Beat
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +48 dBmV/ch., Worst Case)
(V
out
= +56 dBmV @ 870 MHz Equiv)
(V
out
= +58 dBmV @ 870 MHz Equiv)
Noise Figure
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
79 - Channel, 12 dB Tilt
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
79 - Channel, 12 dB Tilt
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
79 - Channel, 12 dB Tilt
50 MHz
550 MHz
750 MHz
870 MHz
Symbol
CSO
112
CSO
79
CSO
112
CSO
79
XMD
112
XMD
79
XMD
112
XMD
79
CTB
112
CTB
79
CTB
112
CTB
79
NF
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
410
Typ
- 66
- 70
- 65
- 69
- 58
- 61
- 53
- 60
- 60
–66
- 57
- 63
4.5
4.5
4.5
4.5
425
Max
- 64
- 68
- 63
- 67
dBc
- 56
- 59
- 51
- 47
dBc
- 58
- 64
- 55
- 61
—
—
—
—
440
dB
Unit
dBc
ARCHIVE INFORMATION
DC Current (V
DC
= 24 V, T
C
= 45°C)
I
DC
mA
MHW8227AN
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
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MHW8227AN
Document Number: MHW8227AN
4
Rev. 3, 5/2006
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
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