Table of Contents
Bipolar transistors
High-power transistors
High-power transistors single
High-current, high-power transistors
High-power transistors double
Low V
CEsat
transistors up to 2000 mW
Low V
CEsat
(BISS) transistors single NPN
Low V
CEsat
(BISS) transistors single PNP
Low V
CEsat
(BISS) double transistors
Low V
CEsat
transistors up to 750 mW
Low V
CEsat
(BISS) transistors single NPN
Low V
CEsat
(BISS) transistors single PNP
Low V
CEsat
(BISS) load switches
High-voltage low V
CEsat
(BISS) transistors
Low V
CEsat
(BISS) RETs
Low V
CEsat
(BISS) transistor PNP – N-channel MOSFET combination
Advantages of low V
CEsat
(BISS) technology
RETs
RETs
RETs
RETs
100
100
100
500
mA single - Part 1
mA single - Part 2
mA double
mA
7
10
10
10
10
Transient voltage suppressor (TVS) diodes
TVS
TVS
TVS
TVS
diodes for mobile applications
diodes, 24 / 40 W
diodes, 400 W
diodes, 600 W
Common Mode Filter for USB 3.x
Common Mode Filter for video interfaces
Ethernet protection
HDMI and memory-card signal conditioning
Video interface protection
NFC antenna protection
LCD/camera protection and filtering
Audio interface protection and filtering
Memory- and SIM-card protection and filtering
Automotive high-speed network protection
Automotive in-vehicle network bus line protection
70
70
70
71
72
61
62
62
63
64
65
66
67
67
68
68
Low V
CEsat
(BISS) transistors
11
Resistor-equipped transistors (RETs)
20
20
20
21
21
11
11
12
13
14
14
15
16
18
18
19
19
MOSFETs
Small-signal MOSFETs
Small-signal MOSFETs in ultra-small DFN1006 and DFN1006B packages
Small-signal MOSFETs in DFN1010D-3 single and DFN1010B-3 dual package
Small-signal MOSFETs in DFN2020MD-6 single and DFN2020-6 dual packages
Small-signal MOSFETs in WLCSP4 and WLCSP6 packages
Automotive-compliant small-signal MOSFETs
Small-signal MOSFETs single (N-channel)
Small-signal MOSFETs single (P-channel)
Small-signal MOSFET – Schottky combination
Small-signal MOSFETs dual
Small-signal MOSFETs complementary
Power MOSFETs
Power MOSFETs
Power MOSFETs
Power MOSFETs
Power MOSFETs
Power MOSFETs
Power MOSFETs
P channel
Multi-chip
Power MOSFETs
20 - 25 V
30 V
40 V
55 - 60 V
75 - 80 V
100 V
105 - 150 V
200 V
75
75
78
79
81
82
84
86
88
88
90
90
General purpose bipolar transistors
Single transistors NPN
Single transistors PNP
Double transistors
Single and double switching transistors
Medium-power general-purpose transistors
High-voltage transistors
LED driver
Constant-current source
Darlington transistors
Schmitt triggers
Low-noise transistors
Matched-pair transistors
MOSFET driver
Medium-frequency transistors
22
Power MOSFETs
22
22
23
23
24
24
25
25
26
26
26
27
28
28
Automotive MOSFETs
Diodes
Schottky barrier diodes and rectifiers
Medium-power low V
F
Schottky rectifiers single ≥1 A - Flatpower packages
Medium-power low V
F
Schottky rectifiers single ≥100 mA - DSN packages
Medium-power low V
F
Schottky rectifiers single ≥200 mA - leadless (DFN) packages
Medium-power low V
F
Schottky rectifiers single ≥200 mA - leaded packages
Medium-power low V
F
Schottky rectifiers dual ≥200 mA
General-purpose Schottky diodes ≤250 mA
Low-capacitance Schottky diodes
General-purpose Zener diodes
Zener diodes specifications
General-purpose, high-speed switching diodes < 90 V
General-purpose, high-speed switching diodes 100 V
General-purpose, switching diodes ≥100 V
PN-rectifier
Controlled-avalanche switching diodes
Low-leakage current-switching diodes
29
33
33
34
35
36
37
38
39
Automotive-compliant small-signal MOSFETS
30 V N-channel automotive TrenchMOS
40 V N-channel automotive TrenchMOS
55 - 60 V N-channel automotive TrenchMOS
75 - 80 V N-channel automotive TrenchMOS
100 V N-channel automotive TrenchMOS
TrenchPLUS MOSFETs
110
116
118
119
121
124
125
128
101
102
104
105
106
107
108
108
108
109
92
Packages
Package details and packing methods
Package details and packing methods SMD
Package details and packing methods WLCSP
Packing details glass diodes, single ended and through hole packages
Package cross reference list
Package cross reference matrix
130
132
132
135
136
137
141
145
Zener diodes
40
42
42
42
43
43
44
44
40
41
Package cross reference
137
144
145
146
164
Switching diodes
Product orientation (tape and reel pack)
Packing methods
Minimized outline drawings and reflow soldering footprint
Index
Tape and reel pack for SMD and WLCSP packages
ESD protection, TVS, filtering and signal conditioning
Ultra low-capacitance ESD protection devices
Low-capacitance ESD protection devices
Standard ESD protection devices
Application-specific ESD and ESD/EMI solutions
USB 2.0 protection and filtering
Common Mode Filter for USB 2.0
USB 3.x and eSATA protection and filtering
45
49
53
57
59
59
59
60
Our commitment: quality and reliability
½
We qualify our products according to the automotive
AEC-Q101 standard and even exceed it’s
requirements, for instance when doing extended
lifetime testing.
½
All our processes and manufacturing plants are
subject to regular international and internal audits,
including the following:
½
ISO9001
½
ISO/TS 16949 for automotive sites
½
ISO14001
½
OHSAS18001
Bipolar transistors
High-power transistors
High-power transistors single
High-current, high-power transistors
High-power transistors double
10
10
10
10
Low V
CEsat
(BISS) transistors
Low V
CEsat
transistors up to 2000 mW
Low V
CEsat
(BISS) transistors single NPN
Low V
CEsat
(BISS) transistors single PNP
Low V
CEsat
(BISS) double transistors
Low V
CEsat
transistors up to 750 mW
Low V
CEsat
(BISS) transistors single NPN
Low V
CEsat
(BISS) transistors single PNP
Low V
CEsat
(BISS) load switches
High-voltage low V
CEsat
(BISS) transistors
Low V
CEsat
(BISS) RETs
Low V
CEsat
(BISS) transistor PNP – N-channel MOSFET combination
Advantages of low V
CEsat
(BISS) technology
11
11
11
12
13
14
14
15
16
18
18
19
19
½
NXP’s Design for Excellence (DfX) program ensures
that each new development builds on past learning
and that best practices are always employed. The
result is continual product improvement.
Resistor-equipped transistors (RETs)
½
Zero defect is our goal. To ensure continuous
improvement failure analysis and the determination
to find root causes is performed at all stages
of development and production by adoption of
quality-analysis tools and methods (e.g. Six-Sigma,
Safe-Launch).
RETs
RETs
RETs
RETs
100
100
100
500
mA single - Part 1
mA single - Part 2
mA double
mA
20
20
20
21
21
General purpose bipolar transistors
Single transistors NPN
Single transistors PNP
Double transistors
Single and double switching transistors
Medium-power general-purpose transistors
High-voltage transistors
LED driver
Constant-current source
Darlington transistors
Schmitt triggers
Low-noise transistors
Matched-pair transistors
MOSFET driver
Medium-frequency transistors
22
22
22
23
23
24
24
25
25
26
26
26
27
28
28
7
Rigorous attention to detail and commitment to quality have yielded a very low
product failure rate of a single-digit part per billion (ppb).
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