VS-2EMH02-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
Cathode
Anode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
SMA
(DO-214AC)
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Package
Circuit configuration
2A
200 V
0.75 V
25 ns
175 °C
SMA (DO-214AC)
Single
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers, and freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
Sp
= 138 °C
T
J
= 25 °C, 6 ms square pulse
TEST CONDITIONS
VALUES
200
2
50
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage, per diode
Reverse leakage current, per diode
Junction capacitance
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 2 A
I
F
= 2 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.88
0.75
-
1
8
MAX.
-
0.95
0.82
2
8
-
μA
pF
V
UNITS
Revision: 20-Sep-17
Document Number: 95832
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EMH02-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 2 A,
dI
F
/dt = 200 A/μs,
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
24
-
16
22
2
3
16
30
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, junction to case
Approximate weight
Marking device
Case style SMA (DO-214AC)
SYMBOL
T
J
, T
Stg
R
thJC
Device mounted on PCB with 2 x 3.5 mm
soldering lands
TEST CONDITIONS
MIN.
-55
-
TYP.
-
11
0.07
0.002
2H2
MAX.
175
21
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (μA)
10
1
0.1
0.01
175 °C
150 °C
125 °C
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.4
0.8
1.2
1.6
2.0
2.4
25 °C
0.001
0.0001
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 20-Sep-17
Document Number: 95832
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EMH02-M3
www.vishay.com
100
3
RMS limit
2.5
2
1.5
1
0.5
0
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
3.5
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
10
1
Average Power Loss (W)
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
180
35
30
170
25
160
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Allowable Case Temperature (°C)
t
rr
(ns)
DC
20
125 °C
15
10
5
25 °C
150
Square
wave (D = 0.50)
Rated V
R
applied
See
note
130
0
0.5
1
1.5
2
2.5
(1)
140
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
45
40
35
125 °C
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Q
rr
(nC)
30
25
25 °C
20
15
10
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 20-Sep-17
Document Number: 95832
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-2EMH02-M3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
2
2
E
3
M
4
H
5
02
6
-M3
7
Vishay Semiconductors product
Current rating (2 = 2 A)
Circuit configuration:
E = single diode
-
-
-
-
M = SMA package
Process type,
H = hyperfast recovery
Voltage code (02 = 200 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-2EMH02-M3/5AT
QUANTITY PER REEL
7500
MINIMUM ORDER QUANTITY
7500
PACKAGING DESCRIPTION
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95400
www.vishay.com/doc?95472
www.vishay.com/doc?95404
www.vishay.com/doc?96376
Revision: 20-Sep-17
Document Number: 95832
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMA
DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 95400
Revision: 09-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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