电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SIT1618BA-73-XXN-40.000000D

产品描述OSC MEMS 40.0000MHZ LVCMOS LVTTL
产品类别无源元件   
文件大小698KB,共18页
制造商SiTime
标准
下载文档 详细参数 全文预览

SIT1618BA-73-XXN-40.000000D概述

OSC MEMS 40.0000MHZ LVCMOS LVTTL

SIT1618BA-73-XXN-40.000000D规格参数

参数名称属性值
类型MEMS(硅)
频率40MHz
输出LVCMOS,LVTTL
电压 - 电源2.5 V ~ 3.3 V
频率稳定度±50ppm
工作温度-40°C ~ 125°C
电流 - 电源(最大值)4.7mA
安装类型表面贴装
封装/外壳4-SMD,无引线
大小/尺寸0.079" 长 x 0.063" 宽(2.00mm x 1.60mm)
高度 - 安装(最大值)0.032"(0.80mm)

文档预览

下载PDF文档
SiT1618B
Standard Frequency, High Temperature Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
33 standard frequencies between 7.3728 MHz and 48 MHz
Supply voltage of 1.8V or 2.5V to 3.3V continuous
Operating temperature from -40°C to 125°C. For -55°C option, refer
to
SiT8920
and
SiT8921
Excellent total frequency stability as low as ±20 ppm
Low power consumption of 3.5 mA typical at 1.8V
LVCMOS/LVTTL compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Industrial, medical, automotive, avionics and other high
temperature applications
Industrial sensors, PLC, motor servo, outdoor networking
equipment, medical video cam, asset tracking systems, etc.
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values
are at 25°C and nominal supply voltage.
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
MHz
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
33 standard frequencies between
7.3728 MHz and 48 MHz
-20
-25
-30
-50
Operating Temperature Range
(ambient)
T_use
-40
-40
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
Idd
OE Disable Current
Standby Current
I_od
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
45
Output High Voltage
VOH
90%
1.8
2.5
2.8
3.0
3.3
3.8
3.6
3.5
2.6
1.4
0.6
1.0
1.3
1.0
+20
+25
+30
+50
+105
+125
1.98
2.75
3.08
3.3
3.63
3.63
4.7
4.5
4.5
4.5
4.3
8.5
5.5
4.0
55
2.0
2.5
3
Frequency Stability and Aging
Frequency Stability
F_stab
ppm
ppm
ppm
ppm
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
mA
A
A
A
%
ns
ns
ns
Vdd
No load condition, f = 20 MHz, Vdd = 2.8V, 3.0V or 3.3V
No load condition, f = 20 MHz, Vdd = 2.5V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V to 3.3V, OE = Low, Output in high Z state.
Vdd = 1.8V, OE = Low, Output in high Z state.
Vdd = 2.8V to 3.3V, ST = Low, Output is weakly pulled down
Vdd = 2.5V, ST = Low, Output is weakly pulled down
Vdd = 1.8V, ST = Low, Output is weakly pulled down
All Vdds
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Extended Industrial
Automotive
Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply
voltage and load.
Operating Temperature Range
Supply Voltage and Current Consumption
Supply Voltage
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
SiTime Corporation
Rev. 1.02
990 Almanor Avenue, Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised June 18, 2015
DC-DC电路中电感的屏蔽层破裂使得热插拔电路没有输出
如下图所示热插拔电路, 当电感屏蔽层破裂后(万用表验证,电感没有断开),热插拔电路没有输出,即图中的VCC_12V网络处输出2.8V(正常输出12V)。U11的4脚输出低电平(1, 2V的样子),U11的4 ......
xiaxingxing 模拟电子
/usr/lib 与 /lib 区别
1) /usr/lib 与 /lib 有什么区别 2)头文件 与 库 各是什么含义?...
ojo 嵌入式系统
关于laundchpad
给位,有没有launchpad每个功能都用过,或者每个功能都很详细了解的,我曾经接触过一段时间,想暑假在学学。 ...
会会 微控制器 MCU
提问分享有好礼,即刻访问TI技术社区!!!
    为了给您提供随时随地的技术支持,德州仪器(TI)推出全新在线技术支持社区(www.deyisupport.com )。注册登录后,您只需在首页录入您的问题,TI工程师将尽快为您解惑答疑。&# ......
EEWORLD社区 TI技术论坛
vxworks内核处理shell命令的入口?
比如我输入i或者符号表中有的函数 就会响应 可是我输入的是一堆乱的字符就会返回undefined symbols 我想知道处理这个过程的函数在内核的哪个库???谢谢啦...
小黑卜哭 实时操作系统RTOS
电信技术名词解释:EDGE技术详解
EDGE是英文Enhanced Data Rate for GSM Evolution 的缩写,即增强型数据速率GSM演进技术。EDGE是一种从GSM到3G的过渡技术,它主要是在GSM系统中采用了一种新的调制方法,即最先进的多时隙操作和 ......
songbo 无线连接

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1100  2527  2445  1210  1596  19  33  26  40  21 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved