PD - 94637B
IRF8113
HEXFET
®
Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
V
DSS
R
DS(on)
max
Qg Typ.
24nC
30V 5.6m:@V
GS
= 10V
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
6/30/05
IRF8113
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.5
–––
–––
–––
–––
–––
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.024
4.7
5.8
–––
- 5.4
–––
–––
–––
–––
–––
24
6.2
2.0
8.5
7.3
10.5
10
0.8
13
8.9
17
3.5
2910
600
250
–––
–––
5.6
6.8
2.2
–––
1.0
150
100
-100
–––
36
–––
–––
–––
–––
–––
–––
1.5
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 13.3A
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 17.2A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
e
= 13.8A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 13.3A
See Fig. 16
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 13.3A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
48
13.3
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
34
21
3.1
A
135
1.0
51
32
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 13.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 13.3A, V
DD
= 10V
di/dt = 100A/µs
Ã
e
2
e
www.irf.com
IRF8113
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
2.5V
10
10
2.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.01
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
1
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
100
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current
(Α
)
ID = 16.6A
VGS = 10V
10
T J = 25°C
(Normalized)
T J = 150°C
1.5
1.0
1
2.5
3.0
VDS = 15V
20µs PULSE WIDTH
3.5
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF8113
100000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
ID= 13.3A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 150°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1.0
T J = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10.0
10msec
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF8113
18
2.2
VGS(th) Gate threshold Voltage (V)
16
14
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID , Drain Current (A)
12
10
8
6
4
2
0
25
50
75
100
125
150
ID = 250µA
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA )
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
0.924
13.395
22.046
14.911
τi
(sec)
0.000228
0.1728
1.5543
22.5
0.1
τ
1
τ
2
τ
3
τ
4
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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