PD - 94646A
IRF7413Z
HEXFET
®
Power MOSFET
Applications
l
Control FET for Notebook Processor
Power
l
Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
l
100% Tested for R
G
V
DSS
30V
R
DS(on)
max
10m:@V
GS
= 10V
A
A
D
D
D
D
I
D
13A
S
S
S
G
1
2
3
4
8
7
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
c
A
W
W/°C
°C
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
f
Notes
through
are on page 10
www.irf.com
1
6/30/05
IRF7413Z
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
62
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.025
8.0
10.5
1.80
-5.0
–––
–––
–––
–––
–––
9.5
3.0
1.0
3.0
2.5
4.0
5.6
2.3
8.7
6.3
11
3.8
1210
270
140
–––
–––
10
13
2.25
–––
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
4.5
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 10A
S
nA
V
mV/°C
µA
V
V/°C
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
V
GS
= 4.5V, I
D
e
= 10A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 10A
See Fig. 16
V
DS
= 15V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 10A
Clamped Inductive Load
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Typ.
–––
–––
Max.
32
10
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
24
16
3.1
A
100
1.0
36
24
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A, V
DD
= 15V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7413Z
1000
TOP
VGS
10V
8.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
8.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
2.5V
10
2.5V
20µs PULSE WIDTH
Tj = 150°C
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 13A
VGS = 10V
ID, Drain-to-Source Current
(Α)
100
1.5
10
(Normalized)
T J = 150°C
T J = 25°C
VDS = 10V
20µs PULSE WIDTH
1.0
1
2
3
4
5
6
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF7413Z
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= 10A
VGS , Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance(pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
4
8
12
16
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 150°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1.00
T J = 25°C
1
0.10
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
T A = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
0.1
100
1000
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7413Z
14
2.5
VGS(th) Gate threshold Voltage (V)
12
ID, Drain Current (A)
10
8
6
4
2
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
2.0
1.5
ID = 250µA
1.0
0.5
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
2
τ
3
τ
4
τ
4
1
Ri (°C/W)
1.8556
2.4927
25.570
20.340
P
DM
t
1
τi
(sec)
0.000337
0.012752
0.691000
21.90000
τ
1
0.1
Ci=
τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
t
2
Notes:
1. Duty factor D =
t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
+T
A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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