PD - 94436C
AUTOMOTIVE MOSFET
IRF2804
IRF2804S
IRF2804L
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 40V
R
DS(on)
= 2.0mΩ
G
S
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
I
D
= 75A
TO-220AB
IRF2804
D
2
Pak
IRF2804S
TO-262
IRF2804L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
280
200
75
1080
330
2.2
± 20
670
1160
See Fig.12a,12b,15,16
-55 to + 175
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
h
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
W
W/°C
V
mJ
A
mJ
°C
c
i
d
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
°C/W
Junction-to-Ambient (PCB Mount, steady state)
j
HEXFET
®
is a registered trademark of International Rectifier.
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1
08/27/03
IRF2804/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
SMD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
40
–––
–––
–––
2.0
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.031
1.5
1.8
–––
–––
–––
–––
–––
–––
160
41
66
13
120
130
130
4.5
7.5
6450
1690
840
5350
1520
2210
–––
–––
2.0
2.3
4.0
–––
20
250
200
-200
240
62
99
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
V
S
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 75A
V
GS
= 10V, I
D
V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
TO-220 Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
f
= 75A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 75A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A
R
G
= 2.5Ω
V
GS
= 10V
f
f
D
G
S
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
56
67
280
A
1080
1.3
84
100
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 20V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.24mH, R
G
= 25Ω, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
I
SD
≤
75A, di/dt
≤
220A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Max R
DS(on)
for D
2
Pak and TO-262 (SMD) devices.
2
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IRF2804/S/L
10000
ID, Drain-to-Source Current (A)
1000
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10000
TOP
TOP
1000
15V
15V
10V
10V
8.0V
8.0V
7.0V
7.0V
6.0V
6.0V
5.5V
5.5V
5.0V
BOTTOM
5.0V
4.5V
BOTTOM 4.5V
VGS
V
GS
100
100
10
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
4.5V
20µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
300
G fs , Forward Transconductance ( S)
ID, Drain-to-Source Current
(Α
)
250
T J = 25°C
T J = 175°C
100
200
150
T J = 175°C
T J = 25°C
10
100
1
4.0
5.0
6.0
VDS = 10V
20µs PULSE WIDTH
7.0
8.0
9.0
50
VDS = 10V
20µs PULSE WIDTH
0
0
40
80
120
160
200
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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IRF2804/S/L
12000
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + C , Cds SHORTED
gs
gd
Crss = C
gd
Coss = Cds + C
gd
20
ID= 75A
VDS= 32V
VDS= 20V
VDS= 8.0V
16
C, Capacitance (pF)
8000
12
Ciss
6000
8
4000
4
2000
Coss
Crss
0
1
10
100
0
0
40
80
120
160
200
240
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J = 175°C
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100.0
1000
10.0
100
100µsec
1.0
T J = 25°C
0.1
0.2
0.6
1.0
1.4
VGS = 0V
1.8
2.2
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
1msec
10msec
100
1000
1
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF2804/S/L
300
LIMITED BY PACKAGE
250
ID , Drain Current (A)
2.0
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
RDS(on) , Drain-to-Source On Resistance
ID = 75A
VGS = 10V
1.5
(Normalized)
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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