PD - 94641B
IRF7494
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
V
DSS
150V
44m
:
@V
GS
= 10V
R
DS(on)
max
I
D
5.2A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 100°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
150
± 20
5.2
3.7
42
3.0
0.02
3.0
-55 to + 150
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/°C
V/ns
°C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
20
50
Units
°C/W
e
–––
–––
Notes
through
are on page 8
www.irf.com
1
03/27/08
IRF7494
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
150
–––
–––
2.5
–––
–––
–––
–––
–––
0.15
35
–––
–––
–––
–––
–––
–––
–––
44
4.0
10
250
100
-100
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 3.1A
f
V
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 120V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
36
7.5
13
15
13
36
14
1750
220
100
870
120
170
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
S
nC
I
D
= 3.1A
V
DS
= 75V
V
GS
= 10V
V
DD
= 75V
I
D
= 3.1A
R
G
= 6.5Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 50V, I
D
= 5.2A
f
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
g
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
Max.
370
3.1
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
55
140
2.7
A
42
1.3
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 3.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.1A, V
DD
= 25V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF7494
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
www.irf.com
3
IRF7494
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7494
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.1
1
10
100
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
