BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008
Product data sheet
1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
I
Various RF switching applications such as:
N
Passive loop through for VCR tuner
N
Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
L
ins(on)
ISL
off
R
DSon
V
GS(p)
[1]
Quick reference data
Parameter
Conditions
[1]
Min
-
30
-
-
Typ
-
-
12
−3
Max
2
-
20
−4
Unit
dB
dB
Ω
V
on-state insertion loss R
S
= R
L
= 50
Ω;
f
≤
1 GHz;
V
SK
= V
DK
= 0 V; I
F
= 0 mA
off-state isolation
drain-source on-state
resistance
gate-source pinch-off
voltage
R
S
= R
L
= 50
Ω;
f
≤
1 GHz;
V
SK
= V
DK
= 5 V; I
F
= 1 mA
V
KS
= 0 V; I
D
= 1 mA
V
DS
= 1 V; I
D
= 20
µA
I
F
= diode forward current.
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
FET gate; diode anode
diode cathode
source
drain
[1]
[1]
Simplified outline
Graphic symbol
BF1108 (SOT143B)
4
3
4
3
1
2
1
2
001aai042
BF1108R (SOT143R)
1
2
3
4
FET gate; diode anode
diode cathode
source
drain
[1]
[1]
3
4
3
4
2
1
2
1
001aai043
[1]
Drain and source are interchangeable.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BF1108
BF1108R
-
-
plastic surface-mounted package; 4 leads
plastic surface-mounted package; reverse pinning;
4 leads
Version
SOT143B
SOT143R
Type number
4. Marking
Table 4.
BF1108
BF1108R
Marking
Marking code
NGp
NHp
Type number
BF1108_BF1108R_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
2 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
FET
V
DS
V
SD
V
DG
V
SG
I
D
Diode
V
R
I
F
T
stg
T
j
reverse voltage
forward current
storage temperature
junction temperature
-
-
−65
-
35
100
+150
150
V
mA
°C
°C
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
-
-
-
-
-
3
3
7
7
10
V
V
V
V
mA
Parameter
Conditions
Min
Max
Unit
FET and diode
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
[1]
Typ
250
Unit
K/W
Soldering point of FET gate and diode anode lead.
7. Static characteristics
Table 7.
Static characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
FET
V
(BR)GSS
gate-source breakdown
voltage
V
GS(p)
I
DSX
I
GSS
R
DSon
Diode
V
F
I
R
forward voltage
reverse current
I
F
= 10 mA
V
R
= 25 V
V
R
= 20 V; T
amb
= 75
°C
-
-
-
-
-
-
1
50
1
V
nA
µA
gate-source pinch-off voltage
drain cut-off current
gate leakage current
drain-source on-state
resistance
V
DS
= 0 V; I
GS
= 0.1 mA
V
DS
= 1 V; I
D
= 20
µA
V
GS
=
−5
V; V
DS
= 2 V
V
GS
=
−5
V; V
DS
= 0 V
V
GS
= 0 V; I
D
= 1 mA
7
-
-
-
-
-
−3
-
-
12
-
−4
10
100
20
V
V
µA
nA
Ω
Conditions
Min
Typ
Max
Unit
BF1108_BF1108R_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
3 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Common cathode; T
amb
= 25
°
C.
Symbol Parameter
FET and diode
L
ins(on)
on-state insertion loss
V
SK
= V
DK
= 0 V; I
F
= 0 mA
R
S
= R
L
= 50
Ω;
f
≤
1 GHz
R
S
= R
L
= 50
Ω;
f = 1 GHz
R
S
= R
L
= 75
Ω;
f
≤
1 GHz
ISL
off
off-state isolation
V
SK
= V
DK
= 5 V; I
F
= 1 mA
R
S
= R
L
= 50
Ω;
f
≤
1 GHz
R
S
= R
L
= 50
Ω;
f = 1 GHz
R
S
= R
L
= 75
Ω;
f
≤
1 GHz
R
DSon
C
i
drain-source on-state
resistance
input capacitance
V
KS
= 0 V; I
D
= 1 mA
f = 1 MHz
V
SK
= V
DK
= 5 V; I
F
= 1 mA
V
SK
= V
DK
= 0 V; I
F
= 0 mA
C
o
output capacitance
f = 1 MHz
V
SK
= V
DK
= 5 V; I
F
= 1 mA
V
SK
= V
DK
= 0 V; I
F
= 0 mA
Diode
C
d
r
D
[1]
[2]
[3]
[2]
[2]
[1]
Conditions
Min
Typ
Max
Unit
-
-
-
30
-
30
-
-
1.3
-
-
38
-
12
2
-
3
-
-
-
20
dB
dB
dB
dB
dB
dB
Ω
-
-
-
-
-
[3]
1
0.65
1
0.65
1.1
-
-
0.9
-
0.9
-
0.7
pF
pF
pF
pF
pF
Ω
diode capacitance
diode forward resistance
I
F
= diode forward current.
f = 1 MHz; V
R
= 0 V
I
F
= 2 mA; f = 100 MHz
-
C
i
is the series connection of C
GS
and C
GK
; C
o
is the series connection of C
GD
and C
GK
.
Guaranteed on AQL basis; inspection level S4, AQL 1.0.
BF1108_BF1108R_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
4 of 10
NXP Semiconductors
BF1108; BF1108R
Silicon RF switches
0
L
ins(on)
−1
mgs357
0
ISL
off
mgs358
−20
−2
−40
−3
−4
0
400
800
f (MHz)
1200
−60
0
400
800
f (MHz)
1200
V
SK
= V
DK
= 0 V; R
S
= R
L
= 50
Ω;
I
F
= 0 mA (diode
forward current).
Measured in test circuit see
Figure 3.
V
SK
= V
DK
= 5 V; R
S
= R
L
= 50
Ω;
I
F
= 1 mA (diode
forward current).
Measured in test circuit see
Figure 3.
Fig 1. On-state insertion loss as a function of
frequency; typical values
Fig 2. Off-state isolation as a function of frequency;
typical values
V
1 nF
100 kΩ
BF1108/BF1108R
50
Ω
input
1 nF
47 kΩ
1 nF
50
Ω
output
4.7 kΩ
100 kΩ
V
1 nF
mbl028
On-state: V = 0 V.
Off-state: V = 5 V.
Fig 3. Test circuit
BF1108_BF1108R_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 29 May 2008
5 of 10
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