CMLT5078E NPN/PNP
CMLT5087E PNP/PNP
CMLT5088E NPN/NPN
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
DUAL TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5078E,
CMLT5087E, and CMLT5088E are surface mount
silicon transistors with enhanced specifications
designed for applications requiring high gain and low
noise.
MARKING CODES: CMLT5078E: L78
CMLT5087E: L87
CMLT5088E: L88
or
88
SOT-563 CASE
MAXIMUM RATINGS:
(TA=25°C)
♦
Collector-Base Voltage
♦
Collector-Emitter Voltage
♦
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
°C
°C/W
50
50
5.0
100
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
MIN
NPN PNP
MAX
ICBO
VCB=20V
50
IEBO
♦
BVCBO
♦
BVCEO
♦
BVEBO
♦
VCE(SAT)
♦
VCE(SAT)
♦
VBE(SAT)
♦
hFE
hFE
♦
hFE
♦
hFE
♦
♦
fT
Cob
Cib
hfe
NF
VEB=3.0V
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7kHz
50
50
5.0
135
65
8.7
45
110
700
300
300
300
50
100
4.0
15
350
1400
3.0
430
435
430
125
150
105
7.5
50
225
700
390
380
350
75
100
400
800
900
50
UNITS
nA
nA
V
V
V
mV
mV
mV
MHz
pF
pF
dB
♦
Enhanced specification
♦
Additional Enhanced specification
♦
R6 (29-June 2015)
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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