RM25C32DS
32-Kbit 1.65V Minimum
Non-volatile Serial EEPROM
SPI Bus
Advance Datasheet
Features
Memory array: 32Kbit non-volatile serial EEPROM memory
Single supply voltage: 1.65V - 3.6V
Serial peripheral interface (SPI) compatible
-Supports SPI modes 0 and 3
1.6 MHz maximum clock rate for normal read
10 MHz maximum clock rate for fast read
Flexible Programming
- Byte/Page Program (1 to 32Bytes)
- Page size: 32 Bytes
64-byte, One-Time Programmable (OTP) Security Register
- 32 bytes factory programmed with a unique identifier
- 32 bytes user programmable
Low Energy Byte Write
-Byte Write consuming 50 nJ
Low power consumption
-0.20 mA active Read current (Typical)
-0.7 mA active Write current (Typical)
-0.5 µA ultra deep power-down current
Auto Ultra-Deep Power-Down
-Device can enter Ultra-Deep Power-Down automatically after finishing a Write
operation
Fast write
-Page Write in 1.5 ms (32 byte page)
-Byte Write within 60 µs
Industry’s lowest read cycle latency
Unlimited read cycles
Hardware reset
Page or chip erase capability
8-lead SOIC, TSSOP and UDFN packages
RoHS-compliant and halogen-free packaging
Data Retention: >40 years at 125
°
C
Endurance: 100,000 write cycles (for both byte and page write cycles)
- No degradation across temperature range
No data loss under UV exposure on bare die or WLCSP
Based on Adesto's proprietary CBRAM
®
technology
Description
The Adesto® RM25C32DS is a 32Kbit, serial EEPROM memory device that utilizes
Adesto's CBRAM® resistive memory technology. The memory devices use a single
low-voltage supply ranging from 1.65V to 3.6V.
DS-RM25C32DS–124C–11/2017
The RM25C32DS is accessed through a 4-wire SPI interface consisting of a Serial Data Input (SDI), Serial Data Output
(SDO), Serial Clock (SCK), and Chip Select (CS). The maximum clock (SCK) frequency in normal read mode is 1.6MHz.
In fast read mode the maximum clock frequency is 20MHz.
Adesto's EEPROM endurance can be as much as 40X higher than industry standard EEPROM devices operating in byte
write mode at 85°C. Unlike EEPROMs based on floating gate technology (which require read-modify-write on a whole
page for every write operation) CBRAM write endurance is based on the capability to write each byte individually,
irrespective of whether the user writes single bytes or an entire page. Additionally, unlike floating gate technology,
CBRAM does not experience any degradation of endurance across the full temperature range. By contrast, in order to
modify a single byte, most EEPROMs modify and write full pages of 32, 64 or 128 bytes. This provides significantly less
endurance for floating gate devices used in byte write mode when compared to page write mode.
The device supports direct write eliminating the need to pre-erase. Writing into the device can be done from 1 to 32 bytes
at a time. All writing is internally self-timed. For compatibility with other devices, the device also features an Erase
function which can be performed on 32-byte pages or on the whole chip.
The device has both Byte Write and Page Write capability. Page Write is from 1 to 32 bytes. The Byte Write operation of
CBRAM consumes only 10% of the energy consumed by a Byte Write operation of EEPROM devices of similar size.
The Page Write operation of CBRAM is 4-6 times faster than the Page Write operation of similar EEPROM devices.
Both random and sequential reads are available. Sequential reads are capable of reading the entire memory in one
operation.
RM25C32DS
DS-RM25C32DS–124C–11/2017
2
1.
Block Diagram
Figure 1-1. Block Diagram
V
CC
Status
Registers
&
Control
Logic
I/O Buffers and Data
Latches
Page Buffer
SCK
SDI
SDO
CS
WP
HOLD
Y-Decoder
SPI
Interface
X-Decoder
GND
Address
Latch
&
Counter
32 Kb
CBRAM
Memory
RM25C32DS
DS-RM25C32DS–124C–11/2017
3
2.
Absolute Maximum Ratings
Table 2-1.
Parameter
Operating ambient temp range
Storage temperature range
Input supply voltage, VCC to GND
Voltage on any pin with respect to GND
ESD protection on all pins (Human Body Model)
Junction temperature
DC output current
Absolute Maximum Ratings
(1)
Specification
-40°C to +85°C
-65°C to +150°C
- 0.3V to 3.6V
-0.5V to (V
CC
+ 0.5V)
>2kV
125°C
5mA
1. CAUTION: Stresses greater than Absolute Maximum Ratings may cause permanent damage to the devices. These
are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in other
sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods
may reduce device reliability.
RM25C32DS
DS-RM25C32DS–124C–11/2017
4
3.
3.1
Electrical Characteristics
DC Operating Characteristics
Applicable over recommended operating range: T
A
= -40°C to +85° C, VCC = 1.65V to 3.6V
Symbol
Parameter
Condition
T
A
= ‐40°C to +85° C,
V
CC
= 1.65V to 3.6V
V
CC
Supply Range
(1)
V
CC
Inhibit
Supply current, Fast
Read
Supply Current,
Read Operation
Supply Current,
Program or Erase
Supply Current,
Standby, LPSE=0
I
CC4
Supply Current,
Standby, LPSE=1
Supply Current, Standby,
Auto Power Down
enabled
I
CC5
Supply Current,
Power Down
Supply Current,
Ultra Deep Power Down
Input Leakage
Output Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
= 3.3V Power Down
V
cc
= 3.3V,
Ultra Deep Power Down
SCK, SDI,
CS
,
HOLD
,
WP
V
IN
=
0V to V
CC
SDO ,
CS
=
V
CC
V
IN
=
0V to V
CC
SCK, SDI,
CS
,
HOLD
,
WP
SCK, SDI,
CS
,
HOLD
,
WP
I
OL
= 3.0mA
I
OH
= -100µA
V
CC
- 0.2
-0.3
V
CC
x 0.7
V
CC
= 3.3V SCK at 10 MHz
SDO = Open, Read
V
CC
= 3.3V SCK at 1.0 MHz
SDO = Open, Read
V
CC
= 3.3V, CS = V
CC
@
25C
@
85C
@
25C
Min
Typ
Max
Units
1.65
3.6
1.55
0.4
0.6
V
V
mA
V
VccI
I
CC1
I
CC2
I
CC3
0.18
0.7
71
89
34
52
1.6
9
1.6
9
0.04
0.5
0.2
1.3
77
97
39
61
2.7
12
2.8
12
0.15
0.7
1
1
V
CC
x 0.3
V
CC
+ 0.3
0.4
mA
mA
V
CC
= 3.3V, CS = V
CC
@
85C
@
25C
@
85C
@
25C
@
85C
@
25C
@
85C
µA
µA
I
CC6
I
IL
I
OL
V
IL
V
IH
V
OL
V
OH
µA
µA
µA
V
V
V
V
1.
A low ESR 100nF capacitor should be connected between each supply pin and GND.
RM25C32DS
DS-RM25C32DS–124C–11/2017
5
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