TSM126
N-Channel Depletion-Mode MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)(max)
600
700 @ V
GS
= 0V
I
D
(A)
0.03
Features
●
●
Depletion Mode
Low Gate Charge
Block Diagram
Application
●
●
Converters
Telecom
Ordering Information
Part No.
TSM126CX RFG
Package
SOT-23
Packing
3kpcs / 7” Reel
N-Channel MOSFET
Note:
“G” denotes Halogen Free Product.
Absolute Maximum Ratings
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
a
Symbol
V
DS
V
GS
Tc=25℃
Tc=70℃
I
D
I
DM
P
D
T
L
T
J
T
J
, T
STG
b
Limit
600
±20
0.030
0.024
0.120
0.5
300
+150
-55 to +150
Unit
V
V
A
A
A
W
o
o
o
Maximum Power Dissipation
Soldering Temperature
C
C
C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance, Junction to Ambient
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Distance of 1.6mm from case for 10 seconds.
Symbol
RӨ
JA
Limit
250
Unit
o
C/W
1/7
Version: A14
TSM126
N-Channel Depletion-Mode MOSFET
Electrical Specifications
(Tj = 25
o
C unless otherwise noted)
Parameter
Static
a
Conditions
V
GS
= -5V, I
D
= 250µA
V
DS
= 3V, I
D
= 8µA
V
DS
= 600V, V
GS
= -5V,
Ta = 25℃
V
DS
= 480V, V
GS
= -5V,
Ta = 125℃
V
GS
= ±20V, V
DS
= 0V
V
DS
= 25V, V
GS
= 0V
V
GS
= 0V, I
D
= 3mA
V
GS
= 10V, I
D
= 16mA
| V
DS
| >2 I
D
*R
DS(ON)max
,
I
D
= 0.01A
Symbol
BV
DSS
V
GS(TH)
Min
600
-2.7
--
Typ
--
-1.8
--
Max
--
-1.0
0.1
10
Unit
V
V
µA
µA
µA
mA
Ω
Ω
S
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source cutoff current
Drain-Source cutoff current
Gate-Source Leakage Current
On-state Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Diode forward Current
Diode Pulse Current
Diode Forward Voltage
Reverse Recovery Time
I
DS(OFF)
I
GSS
I
DSS
R
DS(ON)
g
fs
--
12
--
--
--
350
400
±10
--
700
800
--
0.008
0.017
V
DS
= 25V, V
GS
= -5V,
f = 1.0MHz
V
DS
= 400V, I
D
= 0.01A,
V
GS
= -5V to 5V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Qrr
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
51.42
4.48
1.12
1.18
0.49
0.365
10.01
55.7
57.2
135.5
--
--
--
243.1
639
--
--
--
--
--
--
--
--
--
--
0.025
0.100
1.2
--
--
A
A
V
ns
nC
ns
nC
pF
V
DD
= 300V, I
D
= 0.01A,
V
GS
= -5V to 7V,
R
G
= 6Ω
Continuous
I
SD
= 16mA, V
GS
= -5V
I
F
=0.01A, V
GS
=-10V
dI
F
/dt=100A/µs, V
R
=30V
Reverse Recovery Charge
Notes:
a. pulse test: PW
≤380µs,
duty cycle
≤2%
2/7
Version: A14
TSM126
N-Channel Depletion-Mode MOSFET
Electrical Characteristics Curves
(Ta = 25
o
C, unless otherwise noted)
Maximum Forward Bias Safe Operation Area
Maximum Power Dissipation vs. Case Temperature
Maximum Continuous Drain Current vs.
Case Temperature
Typical Output Characteristics
Typical Transfer Characteristics
Drain to Source ON Resistance
vs. Junction Temperature
3/7
Version: A14
TSM126
N-Channel Depletion-Mode MOSFET
Electrical Characteristics Curves
(Ta = 25
o
C, unless otherwise noted)
Threshold Voltage vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
Typical Capacitance vs. Drain to source Voltage
Typical Gate Charge vs. Gate to Source Voltage
Typical Body Diode Transfer Characteristics
4/7
Version: A14
TSM126
N-Channel Depletion-Mode MOSFET
Electrical Characteristics Curves
(Ta = 25
o
C, unless otherwise noted)
Maximum Peak Current Capability
5/7
Version: A14
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