RJK005N03FRA
Nch 30V 500mA Small Signal MOSFET
Datasheet
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Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
30V
580mΩ
±500mA
200mW
SOT-346
SC-59
SMT3
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Features
1) Low on-resistance
2) Ultra low voltage drive (2.5V drive)
3) AEC-Q101 Qualified
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Inner circuit
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Application
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Packaging specifications
Switching
Packing
Reel size (mm)
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
Embossed
Tape
180
8
3000
T146
KV
Value
30
±500
±2.0
±12
200
150
-55 to +150
Unit
V
mA
A
V
mW
℃
℃
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
T
j
T
stg
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© 2016 ROHM Co., Ltd. All rights reserved.
1/5
20160920 - Rev.001
RJK005N03FRA
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Symbol
R
thJA*2
Values
Min.
-
Typ.
-
Max.
625
Unit
℃
/W
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
30
-
-
-
0.8
-
-
-
-
500
Typ.
-
35.0
-
-
-
-2.04
400
420
650
-
Max.
-
-
1
±10
1.5
-
580
600
940
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 30V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 4.5V, I
D
= 500mA
R
DS(on)*3
V
GS
= 4.0V, I
D
= 500mA
V
GS
= 2.5V, I
D
= 500mA
|Y
fs
|
*3
V
DS
= 10V, I
D
= 500mA
mΩ
mS
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Each terminal mounted on a reference land.
*3 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
2/5
20160920 - Rev.001
RJK005N03FRA
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*3
t
r*3
t
d(off)*3
t
f*3
Conditions
Min.
V
GS
= 0V
V
DS
= 10V
f = 1MHz
V
DD
⋍
15V,V
GS
= 4.0V
Unit
Typ.
60
24
12
9
11
16
31
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= 250mA
R
L
⋍
60Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*3
Q
gs*3
Q
gd*3
Conditions
Min.
V
DD
⋍
24V,
I
D
= 500mA,
V
GS
= 4.0V
-
-
-
Typ.
2.0
0.6
0.7
Max.
4.0
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*3
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 500mA
-
-
-
Typ.
-
-
-
Max.
200
800
1.2
mA
mA
V
Unit
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© 2016 ROHM Co., Ltd. All rights reserved.
3/5
20160920 - Rev.001
RJK005N03FRA
Datasheet
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Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2016 ROHM Co., Ltd. All rights reserved.
4/5
20160920 - Rev.001
RJK005N03FRA
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Dimensions
Datasheet
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© 2016 ROHM Co., Ltd. All rights reserved.
5/5
20160920 - Rev.001
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