SK515B
Technical Data
Data Sheet N0951, Rev. A
SK515B SCHOTTKY RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
This is a Pb - Free device
All SMC parts are traceable to the wafer lo
t
Additional testing can be offered upon request
SMB
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive
Surge Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
Max.
150
5
120
Units
V
A
A
50% duty cycle @T
C
=145C, rectangular
wave form
8.3ms, Half Sine pulse, T
c
= 25
C
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Junction Capacitance
Series Inductance
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
Condition
@ 5A, Pulse, T
J
= 25
C
@ 5A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C,
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.85
0.72
0.002
0.01
70
8.0
-
Max.
Units
V
V
mA
mA
pF
nH
V/s
0.93
0.80
1.0
7.0
200
-
10,000
Voltage Rate of Change
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SK515B
Technical Data
Data Sheet N0951, Rev. A
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction
to Case
Approximate Weight
Symbol
T
J
T
stg
R
JC
wt
Condition
-
-
DC operation
-
Specification
-55 to +150
-55 to +150
4.5
0.09
Units
C
C
C/W
g
Ratings and Characteristics Curves
1000
0.1
Junction Capacitance-CT(PF)
TJ=125℃
Reverse Current-IR(MA)
0.01
100
TJ=25℃
0.001
TJ=25℃
10
5
10
15
20
25
30
35
40
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance
0.0001
0
30
60
90
120
150
Reverse Voltage-VR(V)
Fig.2-Typical Values Of Reverse Current
Instantaneous Forward Current-
IF(A)
100
10
TJ=125℃
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
Forward Voltage Drop-VF(V)
Fig.1-Typical Forward Voltage Drop Characteristics
Fig.3-Typical
Characteristics
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SK515B
Technical Data
Data Sheet N0951, Rev. A
Mechanical Dimensions SMB
Millimeters
Min.
3.30
4.06
1.80
0.152
4.80
2.10
0.051
0.76
SYMBOL
A
B
C
D
E
F
G
H
Inches
Min.
0.130
0.160
0.071
0.006
0.189
0.083
0.002
0.030
Max.
3.94
4.70
2.20
0.305
5.59
2.60
0.203
1.52
Max.
0.155
0.185
0.087
0.012
0.220
0.102
0.008
0.060
Ordering Information
Device
SK515B
Marking Diagram
Shipping
3000pcs / reel
Where XXXXX is YYWWL
B
5
15
YY
WW
L
= Package type
= Forward Current (5A)
= Reverse Voltage (150V)
= Year
= Week
= Lot Number
Package
SMB
(Pb-Free)
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Cautions：Molding
resin
Carrier Tape Specification SMB
SYMBOL
A
B
C
d
E
F
P
P0
P1
T
W
Millimeters
Min.
Max.
2.97
5.70
2.32
1.40
1.40
5.60
3.90
3.90
1.90
0.25
3.17
5.90
2.52
1.60
1.60
5.70
4.10
4.10
2.10
0.35
11.80
12.20
China - Germany - Korea - Singapore - United States
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SK515B
Technical Data
Data Sheet N0951, Rev. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party.
When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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