NVD6828NL
Power MOSFET
Features
90 V, 20 mW, 41 A, Single N−Channel
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1 & 3)
Power Dissipation R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1,
2 & 3)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
90
"20
41
29
83
42
8.7
6.1
3.8
1.9
206
−55
to
175
40
90
A
°C
A
mJ
AYWW
68
28LG
W
A
1 2
W
S
4
Unit
V
V
A
G
N−Channel
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V
(BR)DSS
90 V
R
DS(on)
20 mW @ 10 V
25 mW @ 4.5 V
D
I
D
41 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
3
DPAK
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L(pk)
= 24.5 A,
L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State (Drain)
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.8
40
Unit
°C/W
2
1 Drain 3
Gate Source
A
= Assembly Location*
Y
= Year
WW
= Work Week
6828L = Device Code
G
= Pb−Free Package
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
ORDERING INFORMATION
Device
NVD6828NLT4G
Package
DPAK
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
DPAK
NVD6828NLT4G−
(Pb−Free)
VF01
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2017
−
Rev. 2
1
Publication Order Number:
NVD6828NL/D
NVD6828NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
iss
C
oss
C
rss
Q
G(TOT)
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
V
GS
= 4.5 V, V
DS
= 72 V,
I
D
= 20 A
V
GS
= 10 V, V
DS
= 72 V,
I
D
= 20 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 20 A
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DD
= 72 V,
I
D
= 20 A, R
G
= 2.5
W
14
64
28
43
ns
Q
G(TH)
Q
GS
Q
GD
V
GS
= 10 V, V
DS
= 72 V,
I
D
= 20 A
2900
175
126
32
61
3.3
9.0
16
nC
pF
V
GS
= 0 V,
V
DS
= 90 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
90
87
1.0
100
"100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
−6.5
16.5
19.1
2.5
V
mV/°C
20
25
mW
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.84
0.72
35
25
10
49
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD6828NL
TYPICAL CHARACTERISTICS
80
80
3.8 V
I
D
, DRAIN CURRENT (A)
60
V
DS
≥
10 V
V
GS
= 10 V
T
J
= 25°C
4.5 V
I
D
, DRAIN CURRENT (A)
60
3.6 V
40
3.4 V
20
3.2 V
3.0 V
0
2.8 V
0
1
2
3
4
5
40
T
J
= 25°C
20
T
J
= 125°C
0
T
J
=
−55°C
2.0
2.5
3.0
3.5
4.0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
2
4
6
8
10
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
Figure 2. Transfer Characteristics
T
J
= 25°C
0.025
V
GS
= 4.5 V
0.020
0.015
V
GS
= 10 V
0.010
10
20
30
40
50
60
70
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
2.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (Normalized)
100 k
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
I
D
= 20 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
2.2
1.6
10 k
T
J
= 150°C
1.0
T
J
= 125°C
0.4
−50 −25
0
25
50
75
100
125
150
175
1k
10
20
30
40
50
60
70
80
90
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVD6828NL
TYPICAL CHARACTERISTICS
4000
V
GS
= 0 V
T
J
= 25°C
10
8
6
4 Qgs
2
0
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
C, CAPACITANCE (pF)
3000
C
iss
2000
Qgd
V
DS
= 72 V
I
D
= 20 A
T
J
= 25°C
1000
C
oss
0 C
rss
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
80
I
S
, SOURCE CURRENT (A)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
T
J
= 25°C
60
V
DS
= 72 V
I
D
= 20 A
V
GS
= 10 V
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
40
20
0
0.50
0.60
0.70
0.80
0.90
1.00
1.10
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
Figure 10. Diode Forward Voltage vs. Current
10
ms
I
D
, DRAIN CURRENT (A)
10
100
ms
1 ms
1
V
GS
= 10 V
Single Pulse
T
C
= 25°C
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
10 ms
dc
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVD6828NL
TYPICAL CHARACTERISTICS
10
R
qJC
, R(t) (°C/W)
1
Duty Cycle = 0.5
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
10
Figure 12. Thermal Response
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