TSM250N02D
Taiwan Semiconductor
Dual N-Channel Power MOSFET
20V, 5.8A, 25mΩ
Features
●
●
●
Halogen-free
Suited for 1.8V drive applications
Low profile package
R
DS(on)
(max)
V
DS
V
GS
= 4.5V
V
GS
= 2.5V
V
GS
= 1.8V
Q
g
20
25
35
55
7.7
nC
mΩ
V
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
APPLICATION
●
●
Battery Pack
Load Switch
TDFN 2x2
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
T
J
, T
STG
LIMIT
20
±10
5.8
3.48
23.2
0.62
- 55 to +150
UNIT
V
V
A
A
W
°C
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Operating Junction and Storage Temperature Range
THERMAL PERFORMANCE
PARAMETER
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJA
LIMIT
200
UNIT
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. R
ӨJA
is guaranteed by design while
R
ӨCA
is determined by the user’s board design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
,
Document Number: DS_P0000063
1
Version: B15
TSM250N02D
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 3)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±10V, V
DS
= 0V
V
DS
=16V, V
GS
=0V
V
GS
= 4.5V, I
D
= 4A
V
GS
= 2.5V, I
D
= 3A
V
GS
= 1.8V, I
D
= 2A
BV
DSS
V
GS(TH)
I
GSS
I
DSS
20
0.4
--
--
--
--
0.6
--
--
20
27
39
6.5
--
0.8
±100
1
25
35
55
--
11
1
5
775
85
50
V
V
nA
µA
Drain-Source On-State Resistance
R
DS(on)
--
--
mΩ
Forward Transconductance
Dynamic
(Note 4)
V
DS
=10V, I
D
=3A
g
fs
Q
g
--
--
--
--
--
--
--
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 5)
7.7
0.9
2.4
535
60
34
V
DS
= 10V, I
D
= 4A,
V
GS
= 4.5V
Q
gs
Q
gd
C
iss
C
oss
C
rss
nC
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
(Note 3)
t
d(on)
V
DD
= 10V, I
D
= 1A,
V
GS
= 4.5V, R
G
= 25Ω
t
r
t
d(off)
t
f
--
--
--
--
4.1
11.6
23.9
7.6
8
22
45
14
ns
Continuous Source Current
Pulsed Source Current
Forward On Voltage
Notes:
1.
2.
3.
4.
5.
Current limited by package.
V
G
=V
D
=0V,
Force Current
V
GS
= 0V, I
S
= 1A
I
S
I
SM
V
SD
--
--
--
--
--
--
5.8
23.2
1
A
A
V
Pulse width limited by the maximum junction temperature.
Pulse test: PW
≤
300µs, duty cycle
≤
2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
Document Number: DS_P0000063
2
Version: B15
TSM250N02D
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM250N02DCQ RFG
PACKAGE
TDFN 2x2
PACKING
3,000pcs / 7” Reel
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000063
3
Version: B15
TSM250N02D
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Continuous Drain Current vs. T
C
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
Document Number: DS_P0000063
4
Version: B15
TSM250N02D
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit: Millimeters)
TDFN2x2
SUGGESTED PAD LAYOUT
(Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
Document Number: DS_P0000063
5
Version: B15
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