1.5KE6.8CA Series
1500 Watt Mosorb™ Zener
Transient Voltage Suppressors
Bidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/ consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
http://onsemi.com
•
•
•
•
•
•
•
Working Peak Reverse Voltage Range – 5.8 V to 214 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
µA
above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is typically < 1 ns
AXIAL LEAD
CASE 41A
PLASTIC
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
L
1N6
xxxCA
1.5KE
xxxCA
YYWW
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode band does not imply polarity
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1.)
@ T
L
≤
25°C
Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8″
Derated above T
L
= 75°C
Thermal Resistance, Junction–to–Lead
Operating and Storage
Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
20
R
qJL
T
J
, T
stg
20
– 65 to
+175
Unit
Watts
Watts
L = Assembly Location
1N6xxxCA = JEDEC Device Code
1.5KExxxCA = ON Device Code
YY = Year
WW = Work Week
ORDERING INFORMATION
Device
1.5KExxCA
Packaging
Axial Lead
Axial Lead
Shipping
500 Units/Box
1500/Tape & Reel
mW/°C
°C/W
°C
1.5KExxCARL4
1. Nonrepetitive current pulse per Figure 4 and derated above T
A
= 25°C per
Figure 2.
*Please see 1N6267A to 1N6306A (1.5KE6.8A – 1.5KE250A)
for Unidirectional Devices
©
Semiconductor Components Industries, LLC, 2002
1
February, 2002 – Rev. 2
Publication Order Number:
1.5KE6.8CA/D
1.5KE6.8CA Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
I
PP
I
T
V
C
V
BR
V
RWM
I
R
I
R
V
RWM
V
BR
V
C
I
T
V
I
PP
I
Bi–Directional TVS
http://onsemi.com
2
1.5KE6.8CA Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
V
RWM
(Note 1)
Device
1.5KE6.8CA
1.5KE7.5CA
1.5KE8.2CA
1.5KE9.1CA
1.5KE10CA
1.5KE11CA
1.5KE12CA
1.5KE13CA
1.5KE15CA
1.5KE16CA
1.5KE18CA
1.5KE20CA
1.5KE22CA
1.5KE24CA
1.5KE27CA
1.5KE30CA
1.5KE33CA
1.5KE36CA
1.5KE39CA
1.5KE43CA
1.5KE47CA
1.5KE51CA
1.5KE56CA
1.5KE62CA
1.5KE68CA
1.5KE75CA
1.5KE82CA
1.5KE91CA
1.5KE100CA
1.5KE110CA
1.5KE120CA
1.5KE130CA
1.5KE150CA
1.5KE160CA
1.5KE170CA
1.5KE180CA
1.5KE200CA
1.5KE220CA
1.5KE250CA
(Volts)
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
145
154
171
185
214
Breakdown Voltage
I
R
@ V
RWM
(µA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
BR
Min
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
162
171
190
209
237
(Note 2)
(Volts)
Nom
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
170
180
200
220
250
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
@ I
T
(mA)
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 3)
V
C
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
234
246
274
328
344
I
PP
(A)
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
23.2
21.4
19.5
17.7
16.3
14.6
13.3
12
11
9.9
9.1
8.4
7.2
6.8
6.4
6.1
5.5
4.6
5
QV
BR
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.109
0.109
1. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
2. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
3. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
http://onsemi.com
3
1.5KE6.8CA Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 4
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25 C
_
100
PPK , PEAK POWER (kW)
100
80
60
40
20
0
0
25
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (_C)
10
1
0.1
µs
1
µs
10
µs
100
µs
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
P , STEADY STATE POWER DISSIPATION (WATTS)
D
Figure 2. Pulse Derating Curve
3/8″
IPP VALUE (%)
,
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (_C)
200
0
0
3/8″
100
tr
≤
10
µs
PEAK VALUE – I
PP
PULSE WIDTH (t
P
) IS
DEFINED AS THAT
POINT WHERE THE
PEAK CURRENT
DECAYS TO 50% OF I
PP
.
I
PP
2
HALF VALUE –
50
t
P
1
2
t, TIME (ms)
3
4
Figure 3. Steady State Power Derating
Figure 4. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
IT TEST CURRENT (AMPS)
,
200
100
50
20
10
5
2
1
0.3
0.5 0.7 1
2
3
5 7 10
20 30
∆V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
T
L
= 25_C
t
P
= 10
µs
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
43 V
1000
500
IT TEST CURRENT (AMPS)
,
200
100
50
20
10
5
2
1
0.3
T
L
= 25_C
t
P
= 10
µs
1.5KE6.8CA
through
1.5KE200CA
V
BR(NOM)
= 6.8 to 13 V
20 V
24 V
43 V
75 V
180 V
120 V
Figure 5. Dynamic Impedance
0.5 0.7 1
2
3
5 7 10
20 30
∆V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
http://onsemi.com
4
1.5KE6.8CA Series
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10
µs
0.01
0.1
0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50
100
PULSE WIDTH
10 ms
1 ms
100
µs
Figure 6. Typical Derating Factor for Duty Cycle
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 7.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 8. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
µs
pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
http://onsemi.com
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
