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1N4007GP

产品描述1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL
产品类别分立半导体    二极管   
文件大小49KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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1N4007GP概述

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL

1 A, 1000 V, 硅, 信号二极管, DO-204AL

1N4007GP规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
Reach Compliance Codecompli
ECCN代码EAR99

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1N4001GP
THRU
1N4007GP
1.0 AMP. Glass Passivated Junction Plastic Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
a
a
a
a
a
a
a
High temperature metallurgically bonded construction
Plastic material used carries Underwriters Laboratory
Classification 94V-O
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
1.0 ampere operation at T
A
=75
o
C and 55
o
C with no thermal
runaway
Typical I
R
less than 0.1 uA
High temperature soldering guaranteed:
350
o
C / 10 seconds, 0.375”(9.5mm) lead length, 5 lbs.
(2.3kg) tension
DO-41
Mechanical Data
a
a
a
a
Case: JEDEC DO-41 molded plastic over glass body
Lead: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.012 ounce, 0.3 gram
a
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N
1N
1N
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length @T
A
= 75+
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
Maximum DC Reverse Current @ T
A
=25+
at Rated DC Blocking Voltage @ T
A
=125+
Maximum Full Load Reverse Current , Full
Cycle Average .375”(9.5mm) Lead Length
@T
A
=75+
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance R JA ( Note 2 )
Operating and Storage Temperature Range
T
J
,T
STG
1N
1N
1N
1N
4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP
Units
V
V
V
A
A
V
uA
uA
uA
pF
+
/W
+
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.1
5.0
50
30
8.0
55
-65 to +175
600
420
600
800
560
800
1000
700
1000
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4..0 Volts D.C.
2. Thermal Resistance from Junction to Ambient .375” (9.5mm) Lead Length.
.

1N4007GP相似产品对比

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描述 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compli compli compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 -
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