1N4245 thru 1N4249
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/286 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF
package configurations are available by adding a “US” suffix (see separate data
sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
•
Popular JEDEC registered 1N4245 to 1N4249
series
•
Voidless hermetically sealed glass package
•
Triple-Layer Passivation
•
Internal “Category
I”
Metallurgical bonds
•
Working Peak Reverse Voltage 200 to 1000 Volts.
•
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/286 (for JANS, see 1N5614-5622 series)
•
Surface mount equivalents also available in a
square end-cap MELF configuration with “US”
suffix (see separate data sheet for 1N5614US thru
1N5622US)
•
•
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges,
half-bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard
as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
•
Junction & Storage Temperature: -65
o
C to +175
o
C
•
Thermal Resistance: 42
o
C/W junction to lead at
3/8 inch (10 mm) lead length from body
•
Thermal Impedance: 4.5
o
C/W @ 10 ms
•
Average Rectified Forward Current (I
O
): 1.0 Amps
@ T
A
= 55ºC
•
Forward Surge Current: 25 Amps @ 8.3 ms half-
sine
•
Solder Temperatures: 260ºC for 10 s (maximum)
•
•
•
•
•
•
•
MECHANICAL AND PACKAGING
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
MINIMUM
PEAK
BREAKDOWN
REVERSE
VOLTAGE
VOLTAGE
V
RWM
V
BR
@ 100µA
VOLTS
VOLTS
200
400
600
800
1000
240
480
720
960
1150
AVERAGE
RECTIFIED
CURRENT
o
I
O
@ T
A
= 55 C
AMPS
o
55 C
1.00
1.00
1.00
1.00
1.00
MAXIMUM
FORWARD
VOLTAGE
V
F
@ 3 A
VOLTS
1.3
1.3
1.3
1.3
1.3
MAXIMUM
REVERSE
CURRENT
I
R
@ V
RWM
25 C
1.0
1.0
1.0
1.0
1.0
o
1N4245 thru 1N4249
µA
1N4245
1N4246
1N4247
1N4248
1N4249
150 C
150
150
150
150
150
o
MAXIMUM
SURGE
CURRENT
(NOTE 1)
I
FSM
AMPS
25
25
25
25
25
MAXIMUM
REVERSE
RECOVERY
(NOTE 2)
t
rr
µSec.
5.0
5.0
5.0
5.0
5.0
NOTE 1:
I
O
= 1A, 8 ms surge
Copyright
2004
12-07-2004 REV A
NOTE 2:
I
F
= 0.5A, I
RM
= 1A, I
R(REC)
= .250A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N4245 thru 1N4249
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
Symbol
V
BR
V
RWM
V
F
I
R
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
WWW .
Microsemi
.C
OM
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1
TYPICAL FORWARD CONDUCTANCE CURVE
PACKAGE DIMENSIONS
1N4245 thru 1N4249
Copyright
2004
12-07-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
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