VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT
2-in 1-Package, 1200 V, 75 A
FEATURES
• High short circuit capability, self limiting to 6 x I
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
INT-A-PAK
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
CES
I
C
at T
C
= 80 °C
V
CE(on)
(typical)
at I
C
= 75 A, T
J
= 25 °C
Speed
Package
Circuit configuration
1200 V
75 A
1.90 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
• AC inverter drivers
• Electronic welders
• Switching mode power supplies
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
I
2
t-value, diode
RMS isolation voltage
Maximum junction temperature
V
ISOL
T
J
SYMBOL
V
CES
V
GES
I
C
I
CM
I
F
I
FM (1)
P
D
T
SC
(1)
TEST CONDITIONS
MAX.
1200
± 20
UNITS
V
T
C
= 25 °C
T
C
= 80 °C
t
p
= 1 ms
T
C
= 80 °C
t
p
= 1 ms
T
J
= 150 °C
T
J
= 125 °C
V
R
= 0 V, t = 10 ms, T
J
= 125 °C
f = 50 Hz, t = 1 min
150
75
150
75
150
543
10
1050
2500
+150
W
μs
A
2
s
V
°C
A
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
SYMBOL
V
(BR)CES
V
CE(on)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 1.0 mA, T
J
= 25 °C
V
GE
= 15 V, I
C
= 75 A, T
J
= 25 °C
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 3.0 mA, T
J
= 25 °C
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
MIN.
1200
-
-
5.0
-
-
TYP.
-
1.9
2.1
6.2
-
-
MAX.
-
2.35
-
7.0
5.0
400
mA
nA
V
UNITS
Revision: 20-Sep-17
Document Number: 94712
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
I
SC
R
GINT
L
CE
R
CC’+EE’
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz,
T
J
= 25 °C
t
s
10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
1200 V
V
CC
= 600 V, I
C
= 75 A, R
g
= 10
,
V
GE
= ± 15 V, T
J
= 125 °C
V
CC
= 600 V, I
C
= 75 A, R
g
= 10
,
V
GE
= ± 15 V, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
305
67
328
187
6.74
4.25
311
67
347
337
9.75
7.05
5.52
0.40
0.26
350
3
-
0.75
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
A
nH
m
nF
mJ
ns
mJ
ns
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Internal gate resistance
Stray inductance
Module lead resistance, terminal to chip
DIODE ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Forward voltage
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
SYMBOL
V
F
Q
rr
I
rr
E
rec
I
F
= 75 A, V
R
= 600 V,
dI
F
/dt = 1300 A/μs
V
GE
= -15 V
TEST CONDITIONS
I
F
= 75 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.78
1.85
4.0
9.3
55
73
2.98
4.46
MAX.
2.18
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature
Storage temperature range
Junction to case
per ½ module
IGBT
Diode
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
Power terminal screw: M5
Mounting screw: M6
Weight of module
-
TEST CONDITIONS
MIN.
-
-40
-
-
-
TYP.
-
-
-
-
0.05
2.5 to 5.0
3.0 to 5.0
150
-
MAX.
150
125
0.23
0.33
-
Nm
g
K/W
UNITS
°C
°C
Case to sink (conductive grease applied)
Mounting torque
Weight
Revision: 20-Sep-17
Document Number: 94712
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
30
150
V
GE
= 15 V
125
100
25
20
V
CC
= 600 V
R
g
= 10
Ω
V
GE
= ± 15 V
T
J
=
125 °C
I
C
(A)
75
125 °C
50
25
0
0
0.5
1
1.5
2
2.5
3
3.5
E (mJ)
25 °C
15
E
on
10
E
off
5
0
0
25
50
75
100
125
150
V
CE
(V)
Fig. 1 - IGBT Typical Output Characteristics
I
C
(A)
Fig. 3 - IGBT Switching Loss vs. I
C
150
125
100
75
125 °C
50
25
0
6
7
8
9
10
11
12
13
25 °C
V
CE
= 20 V
40
35
30
25
V
CC
= 600 V
I
C
= 75 A
V
GE
= ± 15 V
T
J
=
125 °C
E
on
E (mJ)
I
C
(A)
20
15
10
5
0
E
off
0
20
40
60
80
100
V
GE
(V)
R
g
(Ω)
Fig. 4 - IGBT Switching Loss vs. R
g
Fig. 2 - IGBT Typical Transfer Characteristics
175
150
125
I
C
, Module
I
C
(A)
100
75
50
25
0
0
250
500
750
1000
1250
1500
R
g
= 10
Ω
V
GE
= ± 15 V
T
J
=
125 °C
V
CE
(V)
Fig. 5 - RBSOA
Revision: 20-Sep-17
Document Number: 94712
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
10
0
IGBT
Z
thJC
(K/W)
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
150
125
100
6
5
4
E
rec
I
F
(A)
E (mJ)
75
50
25
0
0
0.4
0.8
1.2
1.6
2
2.4
3
2
125 °C
25 °C
1
0
V
CC
= 600 V
R
g
= 10
Ω
V
GE
= - 15 V
T
J
=
125 °C
0
25
50
75
100
125
150
V
F
(V)
Fig. 7 - Typical Diode Forward Characteristics
I
F
(A)
Fig. 8 - Diode Switching Loss vs. I
F
5
4.5
4
3.5
E (mJ)
3
2.5
2
1.5
1
0.5
0
0
20
40
V
CC
= 600 V
I
C
= 75 A
V
GE
= - 15 V
T
J
=
125 °C
E
rec
60
80
100
R
g
(Ω)
Fig. 9 - Diode Switching Loss vs. R
g
Revision: 20-Sep-17
Document Number: 94712
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB75TP120N
www.vishay.com
Vishay Semiconductors
10
0
DIODE
Z
thJC
(K/W)
10
-1
10
-2
10
-3
10
-2
10
-1
10
0
10
1
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 20-Sep-17
Document Number: 94712
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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