DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D130
1N4728A to 1N4749A
Voltage regulator diodes
Product specification
Supersedes data of April 1992
1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 1000 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.3 to 24 V.
APPLICATIONS
•
Low voltage stabilizers.
The diodes are type branded.
handbook, halfpage
1N4728A to 1N4749A
DESCRIPTION
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
k
a
MAM241
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZM
I
ZSM
P
tot
T
stg
T
j
PARAMETER
continuous forward current
working current
non-repetitive peak reverse current
total power dissipation
storage temperature
junction temperature
T
amb
= 50
°C
CONDITIONS
MIN.
−
MAX.
500
UNIT
mA
see Table
“Per type”
see Table
“Per type”
−
−65
−65
1000
+200
+200
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 200 mA; see Fig.3
MIN.
−
MAX.
1.2
V
UNIT
1996 Apr 26
2
1996 Apr 26
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
I
Z
(mA)
V
R
(V)
MAX.
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
5
5
5
5
0.25
5
12.2
13.7
15.2
16.7
18.2
133
121
110
100
91
83
76
69
61
57
50
45
41
38
146
162
178
193
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
217
1070
234
1190
252
1260
276
1380
MAX.
MAX.
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5
5
5
5
10
10
10
10
10
10
10
10
10
10
50
100
100
I
R
(µA)
MAX.
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
750
750
750
750
700
700
700
700
700
700
700
700
700
700
700
600
550
500
400
400
400
400
MAX.
r
dif
(Ω)
at I
Z
REVERSE CURRENT
at REVERSE VOLTAGE
WORKING
CURRENT
I
ZM
(mA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(mA)
(2)
Per type
T
j
= 25
°C;
unless otherwise specified.
TEST CURRENT
I
Ztest
(mA)
Philips Semiconductors
TYPE No.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
NOM.
1N4728A
3.3
76
1N4729A
3.6
69
1N4730A
3.9
64
Voltage regulator diodes
1N4731A
4.3
58
1N4732A
4.7
53
1N4733A
5.1
49
1N4734A
5.6
45
1N4735A
6.2
41
1N4736A
6.8
37
1N4737A
7.5
34
3
1N4738A
8.2
31
1N4739A
9.1
28
1N4740A
10
25
1N4741A
11
23
1N4742A
12
21
1N4743A
13
19
1N4744A
15
17
1N4745A
16
15.5
1N4746A
18
14
1N4747A
20
12.5
1N4748A
22
11.5
1N4749A
24
10.5
Notes
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
1N4728A to 1N4749A
Product specification
2. Half square wave or equivalent sinewave pulse
1
⁄
120
second duration superimposed on I
Ztest
.
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
PARAMETER
thermal resistance from junction to tie-point
CONDITIONS
1N4728A to 1N4749A
VALUE
110
UNIT
K/W
lead length 4 mm; see Fig.2
1996 Apr 26
4
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
1N4728A to 1N4749A
handbook, full pagewidth
10
3
MBG928
Rth j-tp
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
2
10
0.02
0.01
0
1
10
−1
tp
T
δ
=
tp
T
1
10
10
2
10
3
10
4
tp (ms)
10
5
Fig.2 Thermal resistance from junction to tie-point; lead length 4 mm.
handbook, halfpage
300
MBG925
IF
(mA)
200
(1)
(2)
100
0
0
0.5
VF (V)
1.0
(1) T
j
= 200
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
Fig.3
Forward current as a function of
forward voltage.
1996 Apr 26
5
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