VS-16TTS08FP-M3, VS-16TTS12FP-M3
www.vishay.com
Vishay Semiconductors
High Voltage Phase Control Thyristor, 16 A
2
(A)
FEATURES
• Designed and qualified for industrial level
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL pending
• 125 °C max. operating junction temperature
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
3L
TO-220 FullPAK
1 (K)
(G) 3
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
10 A
800 V, 1200 V
1.4 V
60 mA
-40 °C to 125 °C
3L TO-220 FullPAK
Single SCR
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge
DESCRIPTION
The VS-16TTS..FP... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C,
T
J
= 125 °C, common heatsink
of 1 °C/W
SINGLE-PHASE BRIDGE
13.5
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
DRM
/V
RRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
10 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
10
16
800, 1200
200
1.4
500
150
-40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08FP-M3
VS-16TTS12FP-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
1200
I
RRM
/I
DRM
AT 125 °C
mA
10
Revision: 24-Aug-17
Document Number: 96299
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08FP-M3, VS-16TTS12FP-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
10 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
-
TEST CONDITIONS
T
C
= 70 °C, 180° conduction, half sine wave
VALUES
TYP. MAX.
10
16
170
200
144
200
2000
1.4
24.0
1.1
0.5
10
150
200
500
150
V/μs
A/μs
mA
A
2
s
A
2
s
V
m
V
A
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A
16TTS08FP, 16TTS12FP, T
J
= 25 °C
Anode supply = 6 V, resistive load,
T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= -10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= -10 °C
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
Revision: 24-Aug-17
Document Number: 96299
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08FP-M3, VS-16TTS12FP-M3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style 3L TO-220 FullPAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +125
2.5
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
16TTS08FP
16TTS12FP
Maximum Allowable CaseTemperature (°C)
140
Maximum Average On-State Power Loss (W)
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
Conduction angle
T
J
= 125 °C
180°
120°
90°
60°
30°
RMS Limit
120
100
80
30°
60
60°
90°
120°
180°
40
0
2
4
6
8
10
12
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable CaseTemperature (°C)
Maximum Average On-State Power Loss (W)
140
120
100
80
30°
60
40
20
60°
90°
120°
0
2
4
6
8
10
180°
12
14
DC
16
18
25
DC
180°
120°
90°
60°
30°
20
15
10
RMS Limit
Conduction Period
5
T
J
= 125 °C
0
0
4
8
12
16
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 24-Aug-17
Document Number: 96299
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08FP-M3, VS-16TTS12FP-M3
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave Forward Current (A)
200
180
160
140
120
100
80
0.01
Maximum non-repetitive
surge
current
vs. pulse train duration.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Peak Half
Sine
Wave On-State Current (A)
180
160
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
140
120
100
80
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
100
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-State Current (A)
1000
100
10
T
J
= 25 °C
T
J
= 125 °C
1
0
1
2
3
4
5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Z
thJC
- Thermal Impedance (°C/W)
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single
pulse
(Thermal resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 24-Aug-17
Document Number: 96299
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16TTS08FP-M3, VS-16TTS12FP-M3
www.vishay.com
Vishay Semiconductors
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
T
J
= -10 °C
T
J
= 25 °C
T
J
= 125 °C
100
Instantaneous
Gate
Voltage (V)
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20
Ω
tr = 0.5 μs, tp >= 6 μs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65
Ω
tr = 1 μs, tp >= 6 μs
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
Frequency Limited by PG (AV)
0.1
1
10
100
Instantaneous
Gate
Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
16
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
12
6
FP
7
-M3
8
1
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Current rating, RMS value
Circuit configuration:
T = single thyristor
Package:
T = TO-220AB
Type of silicon:
S = converter grade
Voltage code x 100 = V
RRM
FullPAK
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-16TTS08FP-M3
VS-16TTS12FP-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96155
www.vishay.com/doc?95456
Revision: 24-Aug-17
Document Number: 96299
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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