MPLAD7.5KP10A(e3) –
MPLAD7.5KP48CA(e3)
Available
7.5 kW, Unidirectional and Bidirectional
TVS Protection Device
DESCRIPTION
High-Reliability
screening available in
reference to
MIL-PRF-19500
These 7.5 kW rated transient voltage suppressors (TVS) in a surface mount PLAD package are provided
with design features to minimize thermal resistance and cumulative heating. These devices have the
ability to clamp dangerous high voltage, short term transients such as those produced by electrostatic
discharge, radiated RFI, inductive load dumps, and the secondary effects of lightning strikes before they
reach sensitive component regions of a circuit. Typical applications include lightning and automotive load
dump protection. They are particularly effective at meeting the multi-stroke lightning standard RTCA DO-
160, section 22 for aircraft design. The all-metal bottom of this space-efficient, low profile package
provides a very low thermal impedance path for heat to escape to the mounting substrate, keeping the
junction temperature low. The PLAD7.5KP is offered with standoff voltages (Vwm) from 10 to 48 volts in
either unidirectional or bidirectional versions. For more information on PLAD packaged products and our
broad range of TVS solutions, please see our website.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Tested in
accordance with the
requirements of
AEC-Q101
FEATURES
•
•
•
•
•
Available in both unidirectional and bidirectional construction (bidirectional with CA suffix)
High-reliable, with wafer fabrication and assembly lot traceability
All parts 100% surge tested
Low profile surface mount package
Optional upscreening is available with various screening and conformance inspection options based
on MIL-PRF-19500. Refer to
Hi-Rel Non-Hermetic Products
brochure on our web site for more
details on the screening options
Suppresses transients up to 7,500 W @ 10/1000 μs (see
Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020
3σ lot norm screening performed on standby current (I
D
)
RoHS compliant (2002/95/EC) devices available
Halogen free (IEC 61249-2-21)
•
•
•
•
•
mini-PLAD
(The cathode is the heatsink
under the body of this device.)
APPLICATIONS / BENEFITS
•
•
•
•
•
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1,2,3,4,5: MPLAD7.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1,2,3,4: MPLAD7.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance:
Class 2,3: MPLAD7.5KP10A to 48CA
Class 4: MPLAD7.5KP10A to 26CA
Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 25 ºC)*:
Level 1,2,3,4,5: MPLAD7.5KP10A to 48CA
Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs at 25 ºC)*:
Level 1, 2, 3: MPLAD7.5KP10A to 48CA
Level 4: MPLAD7.5KP10A to 14CA
Longer transient pulse width capability if well heat sunk for automotive load dump
I
PP
rating of 97 amps to 441 amps
V
WM
rating of 10 volts to 48 volts
V
(BR)(min)
range of 11.1 volts to 53.3 volts
V
C(MAX)
rating of 17 volts to 77.4 volts
*See
MicroNote 132
for further temperature derating selection.
•
•
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
•
•
•
•
•
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 1 of 6
MPLAD7.5KP10A(e3) –
MPLAD7.5KP48CA(e3)
MAXIMUM RATINGS
@ 25 C unless otherwise specified
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Peak Pulse Power @ 10/1000
µs
t
clamping
(0 volts to V
(
BR)
min)
Forward Clamping Voltage @ 400 Amps
(3)
Forward Surge Current
Solder Temperature @ 10 s
(5)
Rated Average Power dissipation
Notes:
1.
2.
3.
4.
5.
(2)
o
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
P
PP
Value
-55 to +150
50
1.5
7,500
<100
<5
2.5
500
260
(1)
2.5
(4)
33.3
Unit
ºC/W
ºC/W
ºC/W
W
ps
ns
V
A
ºC
W
W
Unidirectional
Bidirectional
(3)
V
FS
I
FSM
T
A
= 25 °C
T
C
= 100 °C
P
M(AV)
When mounted on FR4 PC board with recommended mounting pad (see
pad layout).
Also see
Figures 1 and 2.
With impulse repetition rate (duty factor) of 0.05% or less.
At 8.3 ms half-sine wave (unidirectional devices only).
Case temperature controlled on heat sink as specified.
See MicroNote 134 for derating P
PP
when also applying steady-state power.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Epoxy, meets UL94V-0
TERMINALS: Tin/lead or matte-tin (fully RoHS compliant) plating
MARKING: Part number
DELIVERY option: Tape and reel (13 inch)
See
Package Dimensions
on last page.
PART NOMENCLATURE
M
Reliability Level*
M
MA
MX
MXL
*(see
Hi-Rel Non-Hermetic
Product Portfolio)
PLAD 7.5K P
10
CA
(e3)
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Polarity
A = Unidirectional
CA = Bidirectional
Reverse Standoff Voltage
Package Designation
Plastic
P
PP
Rating (W)
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 2 of 6
MPLAD7.5KP10A(e3) –
MPLAD7.5KP48CA(e3)
Symbol
α
V(BR)
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Current: The current used for measuring Breakdown Voltage V
(BR).
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
I
(BR)
I
D
I
PP
V
(BR)
V
C
V
WM
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
REVERSE
STAND-
OFF
VOLTAGE
V
WM
Volts
BREAKDOWN
VOLTAGE V
(BR)
V
(BR)
@
Volts
I
(BR)
mA
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ I
PP
Volts
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
µA
MAXIMUM PEAK
PULSE
CURRENT
(FIG. 2)
I
PP
Amps
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
(BR)
α
V(BR)
mV/°C
DEVICE*
MPLAD7.5KP10A(e3)
MPLAD7.5KP11A(e3)
MPLAD7.5KP12A(e3)
MPLAD7.5KP13A(e3)
MPLAD7.5KP14A(e3)
MPLAD7.5KP15A(e3)
MPLAD7.5KP16A(e3)
MPLAD7.5KP17A(e3)
MPLAD7.5KP18A(e3)
MPLAD7.5KP20A(e3)
MPLAD7.5KP22A(e3)
MPLAD7.5KP24A(e3)
MPLAD7.5KP26A(e3)
MPLAD7.5KP28A(e3)
MPLAD7.5KP30A(e3)
MPLAD7.5KP33A(e3)
MPLAD7.5KP36A(e3)
MPLAD7.5KP40A(e3)
MPLAD7.5KP43A(e3)
MPLAD7.5KP45A(e3)
MPLAD7.5KP48A(e3)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
11.1 - 12.3
12.2 - 13.5
13.3 - 14.7
14.4 - 15.9
15.6 - 17.2
16.7 - 18.5
17.8 - 19.7
18.9 - 20.9
20.0 - 22.1
22.2 - 24.5
24.4 - 26.9
26.7 - 29.5
28.9 - 31.9
31.1 - 34.4
33.3 - 36.8
36.7 - 40.6
40.0 - 44.2
44.4 - 49.1
47.8 - 52.8
50.0 – 55.3
53.3 – 58.9
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.5
48.4
53.3
58.1
64.5
69.4
72.7
77.4
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
441
412
377
349
323
307
288
272
257
231
211
193
178
165
155
141
129
116
108
103
97
9
10
11
12
13
15
16
18
19
22
24
27
29
30
35
38
40
45
49
51
54
* See part nomenclature for additional screening prefixes.
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 3 of 6
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
