SKW30N60HS
High Speed IGBT in NPT-technology
C
•
30% lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for operation above 30 kHz
•
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
•
•
•
•
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
30
E
off
480µJ
T
j
Marking
Package
PG-TO-247-3
PG-TO-247-3
G
E
Type
SKW30N60HS
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
150°C K30N60HS
Symbol
V
CE
I
C
Value
600
41
30
Unit
V
A
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage static
transient (t
p
<1µs,
D<0.05)
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Time limited operating junction temperature for
t
< 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
I
Cpuls
-
I
F
112
112
41
28
I
Fpuls
V
GE
t
SC
P
tot
T
j
,
T
stg
T
j(tl)
-
112
±20
±30
10
250
-55...+150
175
260
V
µs
W
°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.2
Sep 08
Power Semiconductors
SKW30N60HS
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
=500
µA
V
CE(sat)
V
G E
= 15 V,
I
C
=30A
T
j
= 25°C
T
j
= 150
°C
Diode forward voltage
V
F
V
G E
=0 V,
I
F
= 3 0 A
T
j
= 25°C
T
j
= 150
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=700
µA,V
C E
=V
G E
V
C E
= 60 0 V,V
G E
= 0 V
T
j
= 25°C
T
j
= 150
°C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
V
G E
=15V,t
S C
≤1
0
µs
V
C C
≤
60 0V,
T
j
≤
150
°C
-
220
A
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 48 0 V,
I
C
=30A
V
G E
=15V
-
13
nH
-
-
-
-
1500
203
92
141
nC
pF
I
GES
g
fs
V
C E
=0 V,V
G E
=20V
V
C E
=20V,
I
C
=30A
-
-
-
-
-
-
-
20
40
3000
100
nA
S
-
3
1.55
1.55
4
2.05
2.05
5
µA
2.8
3.5
3.15
4.00
600
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
R
thJA
40
R
thJCD
1.29
R
thJC
0.5
K/W
Symbol
Conditions
Max. Value
Unit
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.2
Sep 08
Power Semiconductors
SKW30N60HS
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
di
rr
/dt
T
j
= 25°C ,
V
R
= 40 0 V ,
I
F
=30A,
d i
F
/d t=
1100 A/µs
-
-
-
-
-
-
125
20
105
0.82
17
580
µC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25°C ,
V
C C
= 40 0 V,
I
C
=30A,
V
G E
= 0 /1 5 V,
R
G
= 1 1Ω
L
σ
2 )
=6 0nH ,
C
σ
2 )
=40pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
20
21
250
25
0.60
0.55
1.15
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
2)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
3
Rev. 2.2
Sep 08
Power Semiconductors
SKW30N60HS
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
di
rr
/dt
T
j
= 150
°C
V
R
= 40 0 V ,
I
F
=30A,
d i
F
/d t=
1250 A/µs
-
-
-
-
-
-
190
30
160
2.0
24
480
µC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 150
°C
V
C C
= 40 0 V,
I
C
=30A,
V
G E
= 0 /1 5 V,
R
G
= 1 .8Ω
L
σ
1 )
=6 0nH ,
C
σ
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
T
j
= 150
°C
V
C C
= 40 0 V,
I
C
=30A,
V
G E
= 0 /1 5 V,
R
G
= 1 1Ω
L
σ
1 )
=6 0nH ,
C
σ
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16
13
122
29
0.78
0.48
1.26
20
19
274
27
0.91
0.70
1.61
mJ
ns
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
4
Rev. 2.2
Sep 08
Power Semiconductors
SKW30N60HS
100A
100A
t
P
=4µs
15µs
I
C
,
COLLECTOR CURRENT
80A
I
C
,
COLLECTOR CURRENT
T
C
=80°C
10A
50µs
200µs
1ms
60A
T
C
=110°C
40A
I
c
1A
20A
I
c
10Hz
100Hz
1kHz
10kHz
100kHz
DC
0.1A
1V
0A
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C;
V
GE
=15V)
Limited by Bond wire
40A
200W
I
C
,
COLLECTOR CURRENT
5 0 °C
7 5 °C
1 0 0 °C
1 2 5 °C
POWER DISSIPATION
30A
150W
100W
20A
P
tot
,
50W
10A
0W
2 5 °C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
5
Rev. 2.2
Sep 08
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