SKB06N60HS
High Speed IGBT in NPT-technology
C
•
30% lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for operation above 30 kHz
•
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
•
•
•
•
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
6A
E
off
80µJ
T
j
150°C
Marking
K06N60HS
Package
PG-TO-263-3-2
PG-TO-263-3-2
G
E
Type
SKB06N60HS
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Symbol
V
CE
I
C
Value
600
12
6
Unit
V
A
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage static
transient (t
p
<1µs,
D<0.05)
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Time limited operating junction temperature for
t
< 150h
Soldering temperature (reflow soldering, MSL1)
2)
I
Cpul s
-
I
F
24
24
12
6
I
Fpul s
V
GE
t
SC
P
tot
T
j
,
T
stg
T
j(tl)
-
24
±20
±30
10
68
-55...+150
175
245
V
µs
W
°C
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Oct.07
Power Semiconductors
SKB06N60HS
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Symbol
R
thJC
R
thJCD
R
thJA
R
thJA
Conditions
Max. Value
1.85
4.5
62
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 6 A
T
j
=2 5
°C
T
j
=1 5 0° C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 6 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 20 0
µA
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
Typ.
-
2.8
3.5
1.5
-
3
-
-
-
-
1.55
4
-
-
-
4
max.
-
3.15
4.00
2.05
2.05
5
Unit
V
µA
40
2000
100
nA
S
I
GES
g
fs
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 6 A
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=6 A
V
G E
= 15 V
-
-
-
-
-
350
50
23
33
7
48
pF
nC
nH
A
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
≤
4 0 0 V,
T
j
≤
1 5 0° C
2
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
Power Semiconductors
2
Rev. 2.3
Oct.07
SKB06N60HS
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
°C
,
V
R
= 4 00 V ,
I
F
= 6 A,
d i
F
/ d t
=6 2 6 A/
µs
-
-
-
-
-
-
100
24
76
220
7
315
nC
A
A/µs
ns
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 6 A,
V
G E
= 0/ 15 V ,
R
G
= 50
Ω
2)
L
σ
= 60 n H,
2)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
11
11
196
41
0.10
0.09
0.19
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 6 A,
V
G E
= 0/ 15 V ,
R
G
= 8
Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 6 A,
V
G E
= 0/ 15 V ,
R
G
= 5 0Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
3
63
59
0.11
0.08
0.19
10
13
216
29
0.15
0.12
0.27
mJ
ns
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
2)
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
3
Rev. 2.3
Oct.07
Power Semiconductors
SKB06N60HS
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 5 0° C
V
R
= 4 00 V ,
I
F
= 6 A,
d i
F
/ d t
=6 7 3 A/
µs
-
-
-
-
-
-
150
27
123
500
8.8
280
nC
A
A/µs
ns
Power Semiconductors
4
Rev. 2.3
Oct.07
SKB06N60HS
t
P
=4µs
10A
8µs
15µs
I
C
,
COLLECTOR CURRENT
20A
I
C
,
COLLECTOR CURRENT
T
C
=80°C
50µs
1A
200µs
1ms
T
C
=110°C
10A
I
c
I
c
0A
10Hz
100Hz
1kHz
10kHz
100kHz
0,1A
1V
DC
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 50Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤150°C;V
GE
=15V)
10A
40W
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
60W
5A
20W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
5
Rev. 2.3
Oct.07
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