SGB15N60HS
^
High Speed IGBT in NPT-technology
•
30% lower
E
off
compared to previous generation
•
Short circuit withstand time – 10
µs
•
Designed for operation above 30 kHz
•
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
•
•
•
•
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
1
Qualified according to JEDEC for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
I
C
15A
E
off
200µJ
T
j
150°C
Marking
G15N60HS
Package
PG-TO-263-3-2
G
C
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGB15N60HS
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Symbol
V
CE
I
C
Value
600
27
15
Unit
V
A
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Gate-emitter voltage static
transient (t
p
<1µs,
D<0.05)
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Time limited operating junction temperature for
t
< 150h
Soldering temperature (reflow soldering, MSL1)
2)
I
Cpul s
-
V
GE
t
SC
P
tot
T
j
,T
s t g
T
j(tl)
-
60
60
±20
±30
10
138
-55...+150
175
245
V
µs
W
°C
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev 2.3
Oct 06
Power Semiconductors
SGB15N60HS
^
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Symbol
R
thJC
R
thJA
R
thJA
Conditions
Max. Value
0.9
62
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 15 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 40 0
µA
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
I
GES
g
fs
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 15 A
-
-
-
-
-
-
-
10
40
2000
100
nA
S
3
2.8
3.5
4
3.15
4.00
5
µA
600
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=1 5 A
V
G E
= 15 V
-
-
-
-
-
810
83
51
80
7
135
pF
nC
nH
A
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
≤
4 0 0 V,
T
j
≤
1 5 0° C
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
2
Power Semiconductors
2
Rev 2.3
Oct 06
SGB15N60HS
^
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 23
Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
13
14
209
15
0.32
0.21
0.53
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 3 .6
Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
T
j
=1 5 0° C
V
C C
= 40 0 V,
I
C
= 1 5 A,
V
G E
= 0/ 15 V ,
R
G
= 2 3Ω
1)
L
σ
= 60 n H,
1)
C
σ
= 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
11
6
72
26
0.38
0.20
0.58
12
15
235
17
0.48
0.30
0.78
mJ
ns
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to test circuit in Figure E.
3
Rev 2.3
Oct 06
Power Semiconductors
SGB15N60HS
^
t
P
=5µs
60A
8µs
I
C
,
COLLECTOR CURRENT
50A
40A
30A
20A
10A
0A
10Hz
I
C
,
COLLECTOR CURRENT
T
C
=80°C
15µs
10A
50µs
200µs
1A
1ms
T
C
=110°C
I
c
I
c
0,1A
1V
DC
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 23Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤150°C;V
GE
=15V)
140W
120W
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
100W
80W
60W
40W
20W
0W
25°C
20A
10A
50°C
75°C
100°C
125°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
Power Semiconductors
4
Rev 2.3
Oct 06
SGB15N60HS
^
40A
V
GE
=20V
15V
40A
V
GE
=20V
15V
30A
13V
11V
9V
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
30A
13V
11V
9V
20A
7V
5V
20A
7V
5V
10A
10A
0A
0V
2V
4V
6V
0A
0V
2V
4V
6V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 150°C)
T
J
=-55°C
40A
25°C
150°C
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
2,5V
2,0V
1,5V
1,0V
-50°C
0°C
50°C
100°C
150°C
I
C
=7.5A
I
C
=15A
I
C
=30A
I
C
,
COLLECTOR CURRENT
20A
0A
0V
2V
4V
6V
8V
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=10V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
Power Semiconductors
5
Rev 2.3
Oct 06
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