SGB02N60
Fast IGBT in NPT-technology
•
75% lower
E
off
compared to previous generation
combined with low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
•
Qualified according to JEDEC for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGB02N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 2 A,
V
CC
= 50 V,
R
GE
= 25
Ω
,
start at
T
j
= 25°C
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
T
j
,
T
stg
-55...+150
245
°C
1)
2
C
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
V
CE
600V
I
C
2A
V
CE(sat)150°C
2.2V
T
j
150°C
Marking
G02N60
Package
PG-TO-263-3-2
Symbol
V
CE
I
C
Value
600
6.0
2.9
Unit
V
A
I
Cpul s
-
V
GE
E
AS
12
12
±20
13
V
mJ
t
SC
P
tot
10
30
µs
W
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
2
1)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Nov 06
SGB02N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
1)
Symbol
R
thJC
R
thJA
Conditions
Max. Value
4.2
40
Unit
K/W
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 5 00
µA
V
CE(sat)
V
G E
= 15 V ,
I
C
= 2 A
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 15 0
µA
,
V
C E
=
V
G E
V
C E
= 60 0 V,
V
G E
= 0 V
T
j
=2 5
°C
T
j
=1 5 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
Typ.
-
1.9
2.2
4
-
-
-
1.6
142
18
10
14
7
20
max.
-
2.4
2.7
5
Unit
V
µA
20
250
100
-
170
22
12
18
-
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 2 A
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=2 A
V
G E
= 15 V
V
G E
= 15 V ,t
S C
≤
10
µs
V
C C
≤
6 0 0 V,
T
j
≤
1 5 0° C
-
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Nov 06
1)
2
SGB02N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=2 5
°C
,
V
C C
= 40 0 V,
I
C
= 2 A,
V
G E
= 0/ 15 V ,
R
G
= 11 8Ω ,
1)
L
σ
= 18 0 nH ,
1)
C
σ
= 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
20
13
259
52
0.036
0.028
0.064
24
16
311
62
0.041
0.036
0.078
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=1 5 0° C,
V
C C
= 40 0 V,
I
C
=2 A ,
V
G E
= 0/ 15 V ,
R
G
= 11 8Ω ,
1)
L
σ
= 18 0 nH ,
1)
C
σ
= 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
20
14
287
67
0.054
0.043
0.097
24
17
344
80
0.062
0.056
0.118
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.3
Nov 06
SGB02N60
16A
14A
12A
I
c
10A
t
p
=2
µ
s
I
C
,
COLLECTOR CURRENT
10A
8A
6A
4A
2A
0A
10Hz
T
C
=110°C
T
C
=80°C
I
C
,
COLLECTOR CURRENT
15
µ
s
1A
50
µ
s
200
µ
s
0.1A
1ms
DC
I
c
0.01A
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 118Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
35W
30W
25W
20W
15W
10W
5W
0W
25°C
7A
6A
5A
4A
3A
2A
1A
0A
25°C
I
C
,
COLLECTOR CURRENT
P
tot
,
POWER DISSIPATION
50°C
75°C
100°C
125°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
4
Rev. 2.3
Nov 06
SGB02N60
7A
6A
5A
4A
3A
2A
1A
0A
0V
V
G E
=20V
15V
13V
11V
9V
7V
5V
7A
6A
5A
V
G E
=20V
4A
3A
2A
1A
0A
0V
15V
13V
11V
9V
7V
5V
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
7A
6A
T
j
=+25°C
-55°C
+150°C
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
8A
4.0V
3.5V
I
C
= 4A
I
C
,
COLLECTOR CURRENT
5A
4A
3A
2A
1A
0A
0V
3.0V
2.5V
I
C
= 2A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
5
Rev. 2.3
Nov 06
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