TRENCHSTOP™ Series
IHW40T60
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ technology with soft, fast recovery
anti-parallel Emitter Controlled HE diode
C
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum junction temperature 175°C
Short circuit withstand time 5s
TRENCHSTOP™ and fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low V
CE(sat)
and positive temperature coefficient
Low EMI
Low gate charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice models :
http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft & Hard Switching Applications
G
E
PG-TO247-3
Type
IHW40T60
V
CE
600V
I
C
40A
V
CE(sat),Tj=25°C
1.55V
T
j,max
175C
Marking
H40T60B
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥ 25C
DC collector current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (t
p
< 10 µs, D<0.01)
Short circuit withstand time
2)
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
80
40
120
120
60
30
90
20
25
Unit
V
A
V
s
W
C
V
GE
= 15V,
V
CC
400V,
T
j
150C
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
2)
t
SC
P
tot
T
j
T
stg
-
5
303
-40...+175
-55...+150
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1 10.12.2013
IFAG IPC TD VLS
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0 .5m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 40 A
T
j
=2 5
C
T
j
=1 7 5 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 3 0 A
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 0. 58m A ,
V
CE
=
V
GE
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
C
iss
C
oss
C
rss
Q
Gate
L
E
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=4 0 A
V
G E
= 15 V
-
-
-
-
-
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 40 A
-
-
-
-
-
-
4.1
-
-
600
Symbol
Conditions
R
thJA
R
thJCD
R
thJC
Symbol
Conditions
IHW40T60
q
Max. Value
0.49
1.05
40
Unit
K/W
Value
min.
Typ.
-
1.55
1.90
1.65
1.60
4.9
max.
-
2.05
-
2.05
-
5.7
Unit
V
µA
-
-
-
22
-
40
3000
100
-
nA
S
Ω
2423
113
72
215
13
-
-
-
-
-
pF
nC
nH
IFAG IPC TD VLS
2
Rev. 2.1 10.12.2013
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 4 00 V ,
I
F
= 3 0 A,
d i
F
/ d t
=9 1 0 A/
s
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
C,
V
CC
=400V,
I
C
=40A,
V
GE
=0/15V,
r
G
=5.6
L
=40nH,
C
=30pF
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
IHW40T60
q
Value
Unit
Symbol
Conditions
min.
-
-
-
-
-
-
-
Typ.
-
-
186
66.3
-
0.92
0.92
143
0.92
16.3
603
max.
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
µC
A
A/s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 3 0 A,
d i
F
/ d t
=9 1 0 A/
s
-
-
-
-
225
2.39
22.3
310
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=175
C,
V
CC
=400V,
I
C
=40A,
V
GE
=0/15V,
r
G
=5.6
L
=40nH,
C
=30pF
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
Typ.
-
-
196
76.5
-
1.4
1.4
max.
-
-
-
-
-
-
-
Unit
ns
mJ
IFAG IPC TD VLS
3
Rev. 2.1 10.12.2013
TRENCHSTOP™ Series
IHW40T60
q
140A
100A
120A
t
p
=1µs
I
C
,
COLLECTOR CURRENT
100A
80A
60A
40A
20A
0A
10Hz
T
C
=80°C
T
C
=110°C
I
C
,
COLLECTOR CURRENT
2µs
10A
10µs
50µs
I
c
1A
DC
1ms
10ms
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency for triangular
current (E
on
= 0, hard turn-off)
(T
j
175C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 5.6)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
175C;
V
GE
=0/15V)
350W
300W
60A
P
tot
,
POWER DISSIPATION
250W
200W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
150°C
40A
150W
100W
20A
50W
0W
25°C
0A
25°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
175C)
IFAG IPC TD VLS
4
Rev. 2.1 10.12.2013
TRENCHSTOP™ Series
IHW40T60
q
100A
V
GE
=20V
100A
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
15V
80A
13V
11V
60A
9V
7V
40A
V
GE
=20V
80A
15V
13V
60A
11V
9V
40A
7V
20A
20A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
V
CE(sat),
COLLECTOR
-
EMITTER SATURATION VOLTAGE
100A
2.5V
I
C
=80A
I
C
,
COLLECTOR CURRENT
80A
2.0V
I
C
=40A
60A
1.5V
40A
T
J
=175°C
20A
25°C
1.0V
I
C
=20A
0.5V
0A
0V
2V
4V
6V
8V
10V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=20V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.1 10.12.2013
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