IHW40T120
Soft Switching Series
Low Loss DuoPack : IGBT in
TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
•
•
•
•
•
•
•
•
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop
®
and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
Very soft, fast recovery anti-parallel EmCon
™
HE diode
Low EMI
Qualified according to JEDEC
1
for target applications
Application specific optimisation of inverse diode
•Pb-free
lead plating; RoHS compliant
G
E
PG-TO-247-3
Type
IHW40T120
V
CE
1200V
I
C
40A
V
CE(sat),Tj=25°C
1.8V
T
j,max
150°C
Marking
H40T120
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25°C,
t
p
= 10ms, sine halfwave
T
C
= 25°C,
t
p
≤
2.5µs, sine halfwave
T
C
= 100°C,
t
p
≤
2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
1200V,
T
j
≤
150°C
Power dissipation,
T
C
= 25°C
Operating junction temperature
Storage temperature
1
2)
Symbol
V
CE
I
C
Value
1200
75
40
Unit
V
A
I
Cpuls
-
I
F
105
105
31
19.8
I
Fpuls
I
FSM
47
A
78
200
160
±20
10
270
-40...+150
-55...+150
V
µs
W
°C
V
GE
t
SC
P
tot
T
j
T
stg
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Sep 08
Power Semiconductors
IHW40T120
Soft Switching Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
Power Semiconductors
2
Rev. 2.3 Sep 08
IHW40T120
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
R
thJCD
R
thJA
0.45
1.1
40
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
=0 V,
I
C
=1.5mA
V
CE(sat)
V
G E
= 15 V,
I
C
=40A
T
j
= 25°C
T
j
= 125
°C
T
j
= 150
°C
Diode forward voltage
V
F
V
G E
=0 V,
I
F
= 1 8 A
T
j
= 25°C
T
j
= 125
°C
T
j
= 150
°C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
=1.5mA,V
C E
=V
G E
V
C E
= 12 00 V
,
V
G E
=0 V
T
j
= 25°C
T
j
= 150
°C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
V
C E
=25V,
V
G E
=0 V,
f=1MHz
V
C C
= 96 0 V,
I
C
=40A
V
G E
=15V
-
-
-
-
-
V
G E
=15V,t
S C
≤1
0
µs
V
C C
= 600 V,
T
j
= 2 5°C
-
2500
130
110
203
13
210
-
-
-
-
-
-
nC
nH
A
pF
I
GES
g
fs
R
Gint
V
C E
=0 V,V
G E
=20V
V
C E
=20V,
I
C
=40A
-
-
-
-
-
-
-
21
6
0.4
4.0
600
-
nA
S
Ω
5.0
1.65
1.7
1.7
5.8
6.5
mA
2.15
-
-
-
1.8
2.1
2.3
2.3
-
-
1200
-
-
V
Symbol
Conditions
Value
min.
Typ.
max.
Unit
Internal emitter inductance
L
E
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Rev. 2.3 Sep 08
Power Semiconductors
IHW40T120
Soft Switching Series
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
t
rr
Q
rr
I
rrm
T
j
= 25°C ,
V
R
= 80 0 V ,
I
F
=18A,
d i
F
/d t=
800A/µs
-
-
-
195
1880
20.2
-
-
-
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25°C ,
V
C C
= 60 0 V,
I
C
=40A,
V
G E
= 0 /1 5 V,
R
G
= 1 5Ω ,
L
σ
2 )
=1 80nH,
C
σ
2 )
=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
48
34
480
70
3.3
3.2
6.5
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
t
rr
Q
rr
I
rrm
T
j
= 150
°C
V
R
= 80 0 V ,
I
F
=18A,
d i
F
/d t=
800A/µs
-
-
-
300
3540
25.3
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 150
°C
V
C C
= 60 0 V,
I
C
=40A,
V
G E
= 0 /1 5 V,
R
G
= 1 5Ω
,
L
σ
1 )
=1 80nH,
C
σ
1 )
=39pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
52
40
580
120
5.0
5.4
10.4
-
-
-
-
-
-
-
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
2)
1)
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
Leakage inductance
L
σ
a nd Stray capacity
C
σ
due to dynamic test circuit in Figure E.
4
Rev. 2.3 Sep 08
Power Semiconductors
IHW40T120
Soft Switching Series
100A
100A
T
C
=80°C
t
p
=3µs
10µs
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
80A
T
C
=110°C
10A
50µs
150µs
1A
500µs
60A
40A
I
c
20A
I
c
0,1A
1V
20ms
DC
0A
10Hz
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 600V,
V
GE
= 0/+15V,
R
G
= 15Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤150°C;V
GE
=15V)
70A
250W
60A
I
C
,
COLLECTOR CURRENT
POWER DISSIPATION
200W
50A
40A
30A
20A
10A
0A
25°C
150W
P
tot
,
100W
50W
0W
25°C
50°C
75°C
100°C
125°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≥
15V,
T
j
≤
150°C)
Power Semiconductors
5
Rev. 2.3 Sep 08
测试/测量
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