MBRD835L
Preferred Device
SWITCHMODEt
Power Rectifier
DPAK Surface Mount Package
This SWITCHMODE power rectifier which uses the Schottky
Barrier principle with a proprietary barrier metal, is designed for use
as output rectifiers, free wheeling, protection and steering diodes in
switching power supplies, inverters and other inductive switching
circuits.
Features
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SCHOTTKY BARRIER
RECTIFIER
8.0 AMPERES, 35 VOLTS
1
4
3
•
•
•
•
•
•
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Compact Size
Lead Formed for Surface Mount
Pb−Free Packages are Available
4
1 2
3
MARKING
DIAGRAM
Mechanical Characteristics
•
Case: Epoxy, Molded
•
Weight: 0.4 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 75 Units Per Plastic Tube
Available in 16 mm Tape and Reel, 2500 Units Per 13 in Reel, by
Adding a “T4” Suffix to the Part Number
ESD Rating:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8000 V)
DPAK
CASE 369C
YWW
B
835LG
Y
WW
G
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
Device
MBRD835L
MBRD835LG
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Shipping
†
75 Units/Rail
75 Units/Rail
MBRD835LT4
MBRD835LT4G
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 8
Publication Order Number:
MBRD835L/D
MBRD835L
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 88°C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 20 kHz, T
C
= 80°C)
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1
ms,
Frequency Limited by T
Jmax
)
Storage / Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
AR
T
stg
T
J
dv/dt
Value
35
Unit
V
8.0
16
75
2.0
−65 to +150
−65 to +150
10,000
A
A
A
A
°C
°C
V/ms
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 2)
Symbol
R
qJC
R
qJA
Value
2.8
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3) (i
F
= 8 Amps, T
C
= + 25°C)
(i
F
= 8 Amps, T
C
= +125°C)
Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, T
C
= + 25°C)
(Rated dc Voltage, T
C
= +100°C)
V
F
I
R
0.51
0.41
1.4
35
V
mA
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2%.
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2
MBRD835L
TYPICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (mA)
10
10
1
T
J
= 125°C
25°C
T
J
= 125°C
1
75°C
0.1
25°C
0.01
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
0
0.1
0.2
0.3
0.4
0.5
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
Figure 1. Maximum Forward Voltage
1000
100
I R, REVERSE CURRENT (mA)
I R, REVERSE CURRENT (mA)
100
10
1
0.1
0.01
0.001
0.01
25°C
T
J
= 125°C
100°C
Figure 2. Typical Forward Voltage
T
J
= 125°C
10
100°C
1
75°C
0.1
25°C
0
5
10
15
20
25
V
F
, REVERSE VOLTAGE (VOLTS)
30
35
0
5
10
15
20
25
V
R
, REVERSE VOLTAGE (VOLTS)
30
35
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
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3
MBRD835L
TYPICAL CHARACTERISTICS
T
J
= 25°C
C, CAPACITANCE (pF)
1000
TYPICAL
MAXIMUM
100
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Maximum and Typical Capacitance
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
16
14.4
12.8
11.2
9.6
8
6.4
4.8
3.2
1.6
0
80
85
90
10
20
95 100 105 110 115
T
C
, CASE TEMPERATURE (°C)
120
125
130
SQUARE WAVE
dc
T
J
= 125°C
R
qJA
= 6°C/W
p
(RESISTIVE LOAD)
(CAPACITIVE
IPK
+
5
LOAD)
IAV
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
8
7
6
5
4
3
2
1
0
0
10
20
10
20
30 40 50 60 70 80 90 100 110 120 130
T
A
, AMBIENT TEMPERATURE (°C)
p
(RESISTIVE LOAD)
SQUARE WAVE
T
J
= 125°C
dc
R
qJA
= 40°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
(CAPACITIVE
IPK
+
5
LOAD)
IAV
Figure 6. Current Derating, Infinite Heatsink
P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS
Figure 7. Current Derating
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
10
20
20
30 40 50 60 70 80 90 100 110 120 130
T
A
, AMBIENT TEMPERATURE (°C)
10
dc
T
J
= 125°C
R
qJA
= 80°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
(CAPACITIVE
IPK
+
5
LOAD)
IAV
8
7
6
5
4
20
3
2
1
0
0
1.5
4.5
6
7.5
9 10.5 12 13.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
3
15
10
T
J
= 125°C
p
(RESISTIVE LOAD)
SQUARE WAVE
dc
p
(RESISTIVE LOAD)
SQUARE WAVE
(CAPACITIVE
IPK
+
5
LOAD)
IAV
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
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4
MBRD835L
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
−T−
B
V
R
4
SEATING
PLANE
C
E
A
S
1
2
3
Z
U
K
F
L
D
G
2 PL
J
H
0.13 (0.005)
T
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
M
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
3.0
0.118
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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