DTC114EET1 SERIES
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
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NPN SILICON
BIAS RESISTOR
TRANSISTORS
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
•
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
COLLECTOR
3
1
BASE
2
EMITTER
3
2
mAdc
1
DEVICE MARKING AND RESISTOR VALUES
Device
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
Marking
8A
8B
8C
8D
8F
8H
8J
8K
8L
8M
R1 (K)
10
22
47
10
4.7
2.2
4.7
4.7
22
2.2
R2 (K)
10
22
47
47
∞
2.2
4.7
47
47
47
Shipping
3000/Tape & Reel
CASE 463
SOT–416/SC–75
STYLE 1
©
Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 0
Publication Order Number:
DTC114EET1/D
DTC114EET1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board
(1.)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
(1.)
Total Device Dissipation,
FR–4 Board
(2.)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
(2.)
Junction and Storage Temperature Range
Symbol
P
D
200
1.6
R
θJA
P
D
300
2.4
R
θJA
T
J
, T
stg
400
–55 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter–Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
I
CBO
I
CEO
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
1.9
2.3
1.5
0.18
0.13
0.2
—
—
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector–Emitter Breakdown Voltage
(3.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(3.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
h
FE
35
60
80
80
160
8.0
15
80
80
80
—
60
100
140
140
350
15
30
200
150
140
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) DTC123EET1
(I
C
= 10 mA, I
B
= 1 mA) DTC143TET1
DTC143ZET1/DTC124XET1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
DTC114EET1
DTC124EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144EET1
V
CE(sat)
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
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2
DTC114EET1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
DTC143TET1
DTC143ZET1
Input Resistor
DTC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC114EET1/DTC124EET1/DTC144EET1
DTC114YET1
DTC143TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
250
PD , POWER DISSIPATION (MILLIWATTS)
Symbol
V
OH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R1
7.0
15.4
32.9
7.0
3.3
1.5
3.3
3.3
15.4
1.54
0.8
0.17
—
0.8
0.055
0.38
0.038
10
22
47
10
4.7
2.2
4.7
4.7
22
2.2
1.0
0.21
—
1.0
0.1
0.47
0.047
13
28.6
61.1
13
6.1
2.9
6.1
6.1
28.6
2.86
1.2
0.25
—
1.2
0.185
0.56
0.056
kΩ
Resistor Ratio
R
1
/R
2
200
150
100
50
R
θJA
= 600°C/W
0
– 50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 2. Normalized Thermal Response
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3
DTC114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= –25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
–25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. V
CE(sat)
versus I
C
Figure 4. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
T
A
= –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= –25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
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4
DTC114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTC124EET1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
25°C
0.1
T
A
= –25°C
75°C
hFE, DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
T
A
= 75°C
25°C
–25°C
100
0.01
0.001
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
IC, COLLECTOR CURRENT (mA)
75°C
25°C
T
A
= –25°C
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
1
0.01
V
O
= 5 V
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
0
2
4
6
V
in
, INPUT VOLTAGE (VOLTS)
8
10
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage versus Output
Current
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