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1N6285C

产品描述1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-201
产品类别分立半导体    二极管   
文件大小99KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

1N6285C概述

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-201

1N6285C规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompli
ECCN代码EAR99
击穿电压标称值39 V
最大钳位电压56.4 V
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
湿度敏感等级1
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大重复峰值反向电压31.6 V
表面贴装NO
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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1.5KE SERIES
Transient Voltage Suppressor Diodes
Voltage Range
6.8 to 440 Volts
1500 Watts Peak Power
5.0 Watts Steady State
Features
UL Recognized File # E-96005
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Exceeds environmental standards of MIL-STD-19500
1500W surge capability at 10 x 100 us waveform, duty cycle:
0.01%
Excellent clamping capability
Low zener impedance
Fast response time: Typically less than 1.0ps from 0 volts to
VBR for unidirectional and 5.0 ns for bidirectional
Typical I
R
less than 1uA above 10V
High temperature soldering guaranteed: 260°C / 10 seconds
/ .375”,(9.5mm) lead length / 5lbs.,(2.3kg) tension
DO-201
Mechanical Data
Case: Molded plastic
Lead: Axial leads, solderable per MIL-STD-202,
Lead:
Method 208
Polarity: Color band denotes cathode except bipolar
Weight: 0.94gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms
(
N
ote 1)
O
Symbol
P
PK
P
D
I
FSM
V
F
T
J
, T
STG
Value
Minimum1500
5.0
200
3.5 / 5.0
-55 to + 175
O
Units
Watts
Watts
Amps
Volts
°C
Steady State Power Dissipation at T
L
=75 °C
Lead Lengths .375”, 9.5mm (Note 2)
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 3)
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
Notes:
2. Mounted on Copper Pad Area of 0.8 x 0.8” (20 x 20 mm) Per Fig. 4.
Notes:
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes
Notes: 3.
Maximum.
Notes:
4. V
F
=3.5V for Devices of V
BR
200V and V
F
=5.0V Max. for Devices V
BR
>200V.
Devices for Bipolar Applications
Notes:
1. For Bidirectional Use C or CA Suffix for Types 1.5KE6.8 through Types 1.5KE440.
Notes:
2. Electrical Characteristics Apply in Both Directions.
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