Preliminary
Datasheet
RJL6013DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
R
DS(on)
= 0.66
typ. (at I
D
= 5.5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0437EJ0200
(Previous: REJ03G1748-0100)
Rev.2.00
Jun 16, 2011
Outline
RENESAS Package code: PRSS0004AE-B
(Package name LDPAK(S)-(1))
4
D
1
2
G
3
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note1
Ratings
600
30
11
33
11
33
4
0.87
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 1 of 6
RJL6013DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.66
1400
135
17
30
20
89
16
38
6.6
17.2
1.0
180
Max
—
10
±0.1
4.0
0.81
—
—
—
—
—
—
—
—
—
—
1.7
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 5.5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 5.5 A
V
GS
= 10 V
R
L
= 54.5
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 11 A
I
F
= 11 A, V
GS
= 0
Note4
I
F
= 11 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 2 of 6
RJL6013DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
μ
s
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
7V
10 V
5.4 V
5.2 V
5.6 V
6V
Drain Current I
D
(A)
Drain Current I
D
(A)
10
16
=
PW
100
1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
0.001
0.1
1
10
12
μ
s
0.1
8
5.0 V
4.8 V
0.01
4
4.6 V
V
GS
= 4.4 V
100
1000
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
Tc = 75°C
25°C
−25°C
1
1
0.1
0
2
4
6
8
10
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Ta = 25°C
Pulse Test
I
D
= 11 A
1.0
3A
0.5
5.5 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
1.5
Reverse Recovery Time trr (ns)
2.0
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 3 of 6
RJL6013DPE
Typical Capacitance vs.
Drain to Source Voltage
Preliminary
Dynamic Input Characteristics (Typical)
Drain to Source Voltage V
DS
(V)
Ta = 25°C
Ciss
I
D
= 11 A
Ta = 25°C
V
DD
= 100 V
300 V
480 V
Capacitance C (pF)
V
GS
12
1000
600
V
DS
400
100
Coss
8
10
V
GS
= 0
f = 1 MHz
50
100
150
200
Crss
200
V
DD
= 480 V
300 V
100 V
8
16
24
32
4
1
0
0
0
40
250
300
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
I
D
= 10 mA
Reverse Drain Current I
DR
(A)
16
V
GS
= 0
Ta = 25°C
Pulse Test
4
1 mA
12
3
8
4
2
0.1 mA
1
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 4 of 6
Gate to Source Voltage V
GS
(V)
10000
800
16
RJL6013DPE
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
3
γ
s (t)
Preliminary
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
–
c(t) =
γ
s (t)
• θch
–
c
θch
–
c = 1.25°C/ W, Tc = 25°C
PDM
PW
T
0.03
0.02
1
lse
0.0
pu
t
ho
1s
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vout
Monitor
Vin
Vout
10%
10%
Waveform
90%
10%
90%
td(on)
90%
td(off)
tf
tr
R07DS0437EJ0200 Rev.2.00
Jun 16, 2011
Page 5 of 6
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