Preliminary
Datasheet
RJK6013DPE
600V - 11A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.58
typ. (at I
D
= 5.5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0486EJ0200
(Previous: REJ03G1535-0100)
Rev.2.00
Jun 21, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
D
4
1. Gate
2. Drain
3. Source
4. Drain
1
G
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
ch-c
Tch
Tstg
Note2
Ratings
600
30
11
33
11
33
4
0.87
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0486EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
RJK6013DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.58
1450
140
17
33
20
87
15
37.5
7.3
16.4
0.87
350
Max
—
1
0.1
4.5
0.70
—
—
—
—
—
—
—
—
—
—
1.45
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 5.5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 5.5 A
V
GS
= 10 V
R
L
= 54.5
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
I
D
= 11 A
I
F
= 11 A, V
GS
= 0
Note4
I
F
= 11 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0486EJ0200 Rev.2.00
Jun 21, 2012
Page 2 of 6
RJK6013DPE
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
PW
10
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
Drain Current I
D
(A)
0
μ
s
Drain Current I
D
(A)
10
=
μ
s
7V
10 V
10
16
6V
5.8 V
1
12
5.6 V
8
0.1
Operation in this
area is limited by
R
DS(on)
Ta = 25°C
1 shot
5.4 V
4
0.01
5.2 V
V
GS
= 5 V
0
4
8
12
16
20
0.001
0.1
0
10
100
1000
1
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
20
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
16
12
1
8
Tc = 75°C
25°C
−25°C
4
0
0.1
1
10
100
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
1.6
I
D
= 11 A
3A
5.5 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
2.0
1.2
100
0.8
0.4
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0486EJ0200 Rev.2.00
Jun 21, 2012
Page 3 of 6
RJK6013DPE
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Ciss
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 11 A
Ta = 25
°C
V
DS
= 100 V
300 V
480 V
V
GS
12
1000
600
V
DS
400
100
Coss
8
10
V
GS
= 0
f = 1 MHz
Ta = 25°C
0
100
200
Crss
200
V
DS
= 480 V
300 V
100 V
8
16
24
32
4
1
0
40
300
0
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
20
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0 V
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
16
4
I
D
= 10 mA
1 mA
0.1 mA
12
3
8
4
2
1
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0486EJ0200 Rev.2.00
Jun 21, 2012
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK6013DPE
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Preliminary
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
P
DM
PW
T
0.03
0.02
1
e
0.0
puls
ot
sh
1
100
μ
1m
10 m
Pulse Width
D=
PW
T
0.01
10
μ
100 m
PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
R07DS0486EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
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