Preliminary
Datasheet
RJK5031DPD
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
R
DS(on)
= 2.4
typ. (at I
D
= 1.5 A, V
GS
= 10 V, Ta = 25C)
High speed switching
R07DS0417EJ0200
Rev.2.00
Feb 24, 2012
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
1.
2.
3.
4.
Gate
Drain
Source
Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
Note3
I
AP
Pch
Note 2
ch-c
Tch
Tstg
Note1
Value
500
30
3
12
3
40.3
3.1
150
–55 to +150
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 1 of 6
RJK5031DPD
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
DF
t
rr
Min
500
—
—
3.5
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
4.0
2.4
280
35
5
15
20
90
30
0.9
250
Max
—
1
0.1
4.5
3.2
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.5 A, V
GS
= 10 V
Note 4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
V
DD
= 200 V
I
D
= 1.5 A
V
GS
= 10 V
Rg = 25
I
F
= 3 A, V
GS
= 0
Note 4
I
F
= 3 A, V
GS
= 0
V
DD
= 250 V
di
F
/dt = 100 A/s
Note:
4. Pulse test
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 2 of 6
RJK5031DPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
5
Typical Output Characteristics
Ta = 25°C
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
10
10
μ
s
4
7.5 V
8V
3
10 V
15 V
20 V
7V
6.5 V
PW
=
10
1
Operation in this
area is limited by
R
DS(on)
Ta = 25°C
1 shot
1
10
0
μ
s
2
6V
0.1
1
V
GS
= 5.5 V
0.01
100
1000
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
Typical Transfer Characteristics
5
V
DS
= 10 V
Pulse Test
Ta =
−25°C
Drain Current I
D
(A)
4
25°C
3
75°C
1
2
1
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.1
1
3
10
0
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
8
V
GS
= 10 V
Pulse Test
6
I
D
= 3 A
4
2A
1A
2
10000
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
100
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
0.1
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 3 of 6
RJK5031DPD
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
V
GS
= 0
f = 1 MHz
Ta = 25°C
Ciss
100
Coss
10
Crss
1
0
50
100
150
200
250
Preliminary
Dynamic Input Characteristics (Typical)
I
D
= 3 A
Ta = 25
°C
V
GS
1000
600
V
DS
V
DD
= 400 V
200 V
100 V
12
400
8
200
V
DD
= 400 V
200 V
100 V
0
4
8
12
16
4
0
0
20
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
10
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
8
V
DS
= 10 V
8
6
6
4
I
D
= 10 mA
2
1 mA
4
2
0.1 mA
0
0
0.4
0.8
1.2
1.6
2.0
0
−25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK5031DPD
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
3
γ
s (t)
Preliminary
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
0.05
.02
0.1
0
1shot pulse
θch
–
c(t) =
γ
s (t)
• θch
–
c
θch
–
c = 3.1°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
0.01
0.03
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 200 V
Vout
Monitor
Vin
Vout
10%
10%
Waveform
90%
10%
90%
td(on)
90%
td(off)
tf
tr
R07DS0417EJ0200 Rev.2.00
Feb 24, 2012
Page 5 of 6
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