Preliminary
Datasheet
RJK0660DPA
60V, 40A, 5.1mΩ max.
N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
R07DS0346EJ0300
Rev.3.00
Apr 09, 2013
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note 2
Ratings
60
20
40
160
40
20
30
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0346EJ0300 Rev.3.00
Apr 09, 2013
Page 1 of 6
RJK0660DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
4.2
60
3600
830
230
1.1
45
20
7.5
18
14
43
11
0.8
47
Max
—
0.1
1
4.0
5.1
—
—
—
—
—
—
—
—
—
—
—
—
1.1
—
Unit
V
A
A
V
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0 V
V
GS
=
20
V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
GS
= 10 V
Note4
I
D
= 20 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 40 A
V
GS
= 10 V, I
D
= 20 A,
V
DD
30 V, R
L
= 1.5
,
Rg = 4.7
I
F
= 40 A, V
GS
= 0 V
Note4
I
F
= 40 A, V
GS
= 0 V
di
F
/ dt = 100 A/
s
R07DS0346EJ0300 Rev.3.00
Apr 09, 2013
Page 2 of 6
RJK0660DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Tc = 25°C
1 shot Pulse
Channel Dissipation Pch (W)
10
μs
60
Drain Current I
D
(A)
100
10
0
μ
s
10
1 ms
1
Operation in
this area is
0.1 limited by R
DS(on)
0.01
0.1
PW = 10 ms
DC Operation
40
20
0
50
100
150
200
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
5.2 V
5V
4.8 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
4.6 V
Drain Current I
D
(A)
40
6V
7 V, 10 V
40
30
20
20
Tc = 75°C
25°C
–25°C
V
GS
= 4.4 V
10
Pulse Test
0
2
4
6
8
10
10
0
2
4
6
8
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Drain to Source Saturation Voltage
V
DS (on)
(mV)
250
Pulse Test
200
10
150
V
GS
= 10 V
100
I
D
= 20 A
50
10 A
5A
4
8
12
16
20
0.1
1
10
100
1000
1
0
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0346EJ0300 Rev.3.00
Apr 09, 2013
Page 3 of 6
RJK0660DPA
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
I
D
= 20 A
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0 V
f = 1 MHz
Ciss
6
V
GS
= 10 V
Capacitance C (pF)
8
1000
Coss
4
2
0
–25
Crss
0
25
50
75
100 125 150
100
0
10
20
30
40
50
60
Case Temperature Tc (
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Reverse Drain Current I
DR
(A)
I
D
= 40 A
Gate to Source Voltage V
GS
(V)
100
20
50
Pulse Test
10 V
40
80
V
DD
= 50 V
25 V
10 V
V
GS
16
60
V
DS
12
30
40
8
20
V
GS
= 0 V
20
V
DD
= 50 V
25 V
10 V
0
12
24
36
48
4
10
0
0
60
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
I
AP
= 40 A
V
DD
= 20 V
duty < 0.1 %
Rg
≥
50
Ω
Avalanche Energy E
AS
(mJ)
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (
°C)
R07DS0346EJ0300 Rev.3.00
Apr 09, 2013
Page 4 of 6
RJK0660DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.3
0.5
0.2
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
0.1
θch
– c = 1.92°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.03
0.05
2
0.0
lse
01
t p u
0.
o
h
1s
100
μ
0.01
10
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP
2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
V
DS
Monitor
L
I
AP
Monitor
E
AS
=
I
AP
Rg
D. U. T
V
DD
V
DS
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0346EJ0300 Rev.3.00
Apr 09, 2013
Page 5 of 6
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