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PZ28F064M29EWTA

产品描述Flash, 4MX16, 65ns, PBGA48, BGA-48
产品类别存储    存储   
文件大小1MB,共87页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

PZ28F064M29EWTA概述

Flash, 4MX16, 65ns, PBGA48, BGA-48

PZ28F064M29EWTA规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
Objectid1250490541
包装说明VFBGA, BGA48,6X8,32
Reach Compliance Codecompliant
ECCN代码3A991.B.1.A
YTEOL0
最长访问时间65 ns
备用内存宽度8
启动块TOP
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PBGA-B48
JESD-609代码e1
长度8 mm
内存密度67108864 bit
内存集成电路类型FLASH
内存宽度16
功能数量1
部门数/规模8,127
端子数量48
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装等效代码BGA48,6X8,32
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
页面大小8/16 words
并行/串行PARALLEL
峰值回流温度(摄氏度)260
编程电压3 V
认证状态Not Qualified
就绪/忙碌YES
座面最大高度1 mm
部门规模8K,64K
最大待机电流0.00012 A
最大压摆率0.025 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
切换位YES
类型NOR TYPE
宽度6 mm

文档预览

下载PDF文档
32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX
PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX
JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
• Asynchronous random or page read
– Page size: 8 words or 16 bytes
– Page access: 25ns
– Random access (V
CCQ
= 2.7–3.6V): 60ns (BGA);
70ns (TSOP)
• Buffer program: 256-word MAX program buffer
• Program time
– 0.56µs per byte (1.8 MB/s TYP when using 256-
word buffer size in buffer program without V
PPH
)
– 0.31µs per byte (3.2 MB/s TYP when using 256-
word buffer size in buffer program with V
PPH
)
• Memory organization
– 32Mb: 64 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 63 main blocks,
64KB each
– 64Mb: 128 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 127 main blocks,
64 KB each
– 128Mb: 128 main blocks, 128KB each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– READ operation on another block during a PRO-
GRAM SUSPEND operation
– READ or PROGRAM operation on one block dur-
ing an ERASE SUSPEND operation on another
block
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block and chip erase
• V
PP
/WP# pin protection
– V
PPH
voltage on V
PP
to accelerate programming
performance
– Protects highest/lowest block (H/L uniform) or
top/bottom two blocks (T/B boot)
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent secure
identification
– Program or lock implemented at the factory or by
the customer
• Low-power consumption: Standby mode
• JESD47H-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm single-bit cell process technology
• Packages (JEDEC-standard)
– 56-pin TSOP (128Mb, 64Mb)
– 48-pin TSOP (64Mb, 32Mb)
– 64-ball FBGA (128Mb, 64Mb)
– 48-ball BGA (64Mb, 32Mb)
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

 
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