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1N5336AE3/TR12

产品描述DIODE ZENER 4.3V 5W T18
产品类别半导体    分立半导体   
文件大小151KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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1N5336AE3/TR12概述

DIODE ZENER 4.3V 5W T18

1N5336AE3/TR12规格参数

参数名称属性值
电压 - 齐纳(标称值)(Vz)4.3V
容差±10%
功率 - 最大值5W
阻抗(最大值)(Zzt)2 Ohms
不同 Vr 时的电流 - 反向漏电流10µA @ 1V
不同 If 时的电压 - 正向(Vf1.2V @ 1A
工作温度-65°C ~ 150°C
安装类型通孔
封装/外壳T-18,轴向
供应商器件封装T-18

文档预览

下载PDF文档
1N5333B thru 1N5388B, e3
Silicon 5 Watt Zener Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt
Zeners provides voltage regulation in a selection from 3.3 to 200 volts with
different tolerances as identified by specific suffix letter on the part number.
These plastic encapsulated Zeners have moisture classification of Level 1
with no dry pack required and are also available in various military
equivalent screening levels by adding a prefix identifier as also described in
the Features section. They may be operated at high maximum dc currents
with adequate heat sinking with their comparatively low thermal resistance
design. Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
APPEARANCE
WWW .
Microsemi
.C
OM
T-18
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
JEDEC registered 1N5333 to 1N5388B
Zener voltage available 3.3V to 200V
Standard voltage tolerances are plus/minus 5% with B
suffix and 10 % with A suffix identification
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes respectively to
part numbers.
Surface mount equivalents available as SMBJ5333 to
SMBJ5388B, or SMBG5333B to SMBG5388B
RoHS Compliant devices available by adding e3 suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and
temperature range
Wide selection from 3.3 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands high surge stresses
Minimal changes of voltage versus current as
specified by voltage regulation (ΔV
Z
)
High specified maximum current (I
ZM
) when
adequately heat sunk
Moisture classification is Level 1 per IPC/JEDEC J-
STD-020B with no dry pack required
MAXIMUM RATINGS
Power dissipation at 25
º
C: 5.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to
+150
º
C
Thermal Resistance: 25
º
C/W junction to lead at 3/8
(10 mm) lead length from body, or 85
º
C/W junction
to ambient when mounted on FR4 PC board (1oz
Cu) with 4 mm
2
copper pads and track width 1
mm, length 25 mm
Steady-State Power: 5 watts at T
L
< 25
o
C 3/8 inch
(10 mm) from body, or 1.47 watts at T
A
= 25
º
C
when mounted on FR4 PC described for thermal
resistance (also see Figure 1)
Forward voltage @1.0 A: 1.2 volts (maximum)
Solder Temperatures: 260
º
C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end.
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.7 grams
See package dimensions on last page
1N5333B thru 1N5388B, e3
Copyright
©
2008
8-06-2008 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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