BPC2425M9X250
Power LDMOS module
Rev. 1 — 29 March 2018
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power module for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz. The module is designed for high-power CW
applications.
Table 1.
Test information
Typical RF performance at V
DS
= 32 V; T
mb
= 25
C; I
Dq
= 50 mA.
Test signal
CW
CW pulsed
[1]
[1]
f
(MHz)
2450
2450
V
DS
(V)
32
32
P
L
(W)
300
300
G
p
(dB)
17
17.5
D
(%)
61
63
Pulse width is 300
s;
duty cycle is 50 %.
1.2 Features and benefits
High efficiency
Small size: 52
34 mm
Input/output 50
matched
Designed for broadband operation (2400 MHz to 2500 MHZ)
Built-in temperature sensor
Built-in temperature compensation networks
100 % RF testing in production
For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as industrial heating and drying, scientific, medical, plasma lighting and
solid state cooking
BPC2425M9X250
Power LDMOS module
2. Pinning information
2.1 Pinning
TEMP 6
4 VDB
RF IN
1
2
RF OUT
3 VDA
VG 5
amp00625
Top view.
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
RF IN
RF OUT
VDA
VDB
VG
TEMP
[1]
Pin description
Pin
1
2
3
4
5
6
Description
RF input
RF output
drain-source voltage, pin A
[1]
drain-source voltage, pin B
[1]
gate-source voltage
temperature sensor
Drain voltage must be applied for both pins VDA and VDB
3. Ordering information
Table 3.
Ordering information
Package
Name
BPC2425M9X250
-
Description
pallet; 6 mounting holes; 6 terminations
Version
-
Type number
4. Block diagram
TEMP
VDA
-t°
RF OUT
RF IN
VG
amp00626
VDB
Fig 2.
BPC2425M9X250
Block diagram
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
2 of 11
BPC2425M9X250
Power LDMOS module
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
mb
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
mounting base temperature
Conditions
non operating
non operating
[1]
Min
0
6
65
0
Max
65
+13
+85
60
Unit
V
V
C
C
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
6. Characteristics
Table 5.
DC characteristics
Conditions
V
GS
= 0 V; I
D
= 2.7 mA
V
DS
= 32 V; I
D
= 50 mA
V
GS
= 0 V; V
DS
= 32 V
VG pin
VD pin
Min
65
-
-
300
-
-
Typ
-
1.75
-
0.01
1
Max
-
-
4.20
-
-
Unit
V
V
A
F
F
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
R
GS
C
iss
gate-source threshold voltage
drain leakage current
gate-source resistance
input capacitance
1500 5000
Table 6.
RF Characteristics
Test signal: CW; RF performance at T
mb
= 25
C; V
DS
= 32 V; I
Dq
= 50 mA; unless otherwise
specified; in a class-AB production test circuit.
Symbol Parameter
G
p
P
L(1dB)
P
L(3dB)
f
G
flat
RL
in
D
sup(H)
power gain
Conditions
P
L
= 280 W; f = 2450 MHz
Min
17
-
-
2400
-
-
56
-
Typ
18
280
310
-
1.5
15
61
30
Max
-
-
-
2500
-
5
-
-
Unit
dB
W
W
MHz
dB
dB
%
dBc
output power at 1 dB gain f = 2450 MHz
compression
output power at 3 dB gain f = 2450 MHz
compression
frequency
gain flatness
input return loss
drain efficiency
harmonic suppression
P
L
= 250 W
P
L
= 250 W; f = 2400 MHz to
f = 2500 MHz
P
L
= 60 W; f = 2400 MHz to
f = 2500 MHz
P
L
= 300 W; f = 2450 MHz
P
L
= 300 W; f = 2450 MHz
6.1 Ruggedness in class-AB operation
The BPC2425M9X250 is capable of withstanding a load mismatch corresponding to
VSWR = 4 : 1 through all phases with a time rate of 15 ms/degree under the following
conditions: V
DS
= 32 V; I
Dq
= 50 mA; P
L
= 250 W (CW); f = 2450 MHz; T
mb
= 25
C.
BPC2425M9X250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
3 of 11
BPC2425M9X250
Power LDMOS module
7. Test information
7.1 Graphical data
7.1.1 CW
amp00627
amp00628
22
G
p
(dB)
(3)
70
η
D
(%)
20
(2)
60
(3)
(2)
(1)
18
(1)
50
16
40
14
50
100
150
200
250
300
P
L
(W)
350
30
50
100
150
200
250
300
P
L
(W)
350
I
Dq
= 50 mA; V
DS
= 32 V; T
mb
= 25
C.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
I
Dq
= 50 mA; V
DS
= 32 V; T
mb
= 25
C.
(1) f = 2400 MHz
(2) f = 2450 MHz
(3) f = 2500 MHz
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BPC2425M9X250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
4 of 11
BPC2425M9X250
Power LDMOS module
22
G
p
(dB)
20
amp00629
70
η
D
(%)
60
amp00630
(1)
(2)
(3)
(4)
18
(1)
(2)
(3)
(4)
50
16
40
14
50
100
150
200
250
300
P
L
(W)
350
30
50
100
150
200
250
300
P
L
(W)
350
I
Dq
= 50 mA; V
DS
= 32 V; f = 2450 MHz.
(1) T
mb
= 5
C
(2) T
mb
= 25
C
(3) T
mb
= 40
C
(4) T
mb
= 60
C
I
Dq
= 50 mA; V
DS
= 32 V; f = 2450 MHz.
(1) T
mb
= 5
C
(2) T
mb
= 25
C
(3) T
mb
= 40
C
(4) T
mb
= 60
C
Fig 5.
Power gain as a function of output power;
typical values
-4
amp00631
Fig 6.
Drain efficiency as a function of output power;
typical values
22
amp00632
RL
in
(dB)
-8
G
p
(dB)
20
-12
18
(2)
(1)
(3)
-16
16
-20
2350
2400
2450
2500
f (MHz)
2550
14
2350
2400
2450
2500
f (MHz)
2550
I
Dq
= 50 mA; V
DS
= 32 V; P
L
= 280 W.
I
Dq
= 50 mA.
(1) V
DS
= 28 V; P
L
= 220 W
(2) V
DS
= 30 V; P
L
= 250 W
(3) V
DS
= 32 V; P
L
= 280 W
Fig 7.
Input return loss as a function of frequency;
typical values
Fig 8.
Power gain as a function of frequency; typical
values
BPC2425M9X250
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2018. All rights reserved.
Product data sheet
Rev. 1 — 29 March 2018
5 of 11
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
