VS-C4PH3006LHN3
www.vishay.com
Vishay Semiconductors
Hyperfast Soft Recovery Diode,
2 x 15 A FRED Pt
®
Gen 4
Base
common
cathode
2
FEATURES
• Gen 4 FRED Pt
®
technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
1
2
3
• 175 °C operating junction temperature
TO-247AD 3L
1
3
Anode
Anode
2
1
2
Common
cathode
• AEC-Q101 qualified, meets JESD 201 class 1
whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AD 3L
2 x 15 A
600 V
1.28 V
See Recovery table
175 °C
Common cathode
DESCRIPTION
Gen 4 Fred Pt technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce power dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current, per leg
Operating junction and storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 142 °C
T
C
= 25 °C, t
p
= 8.3 ms half sine wave
TEST CONDITIONS
MAX.
600
15
200
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 15 A
I
F
= 30 A
Forward voltage
V
F
I
F
= 15 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 125 °C
I
F
= 15 A, T
J
= 150 °C
I
F
= 30 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.6
1.87
1.35
1.67
1.28
1.61
-
-
16
MAX.
-
1.9
-
-
-
1.52
-
15
500
-
μA
pF
V
UNITS
Revision: 21-Feb-17
Document Number: 95953
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PH3006LHN3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
50
70
8.5
16
250
600
MAX.
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heat sink
Weight
Mounting torque
Marking device
1000
SYMBOL
R
thJC
R
thCS
TEST CONDITIONS
MIN.
-
-
-
-
6.0
(5)
TYP.
-
0.4
6.0
0.21
-
MAX.
1.4
-
-
-
12
(10)
UNITS
°C/W
g
oz.
kgf · cm
(lbf · in)
Case style TO-247AD 3L
1000
175 °C
C4PH3006LH
I
F
- Instantaneous Forward Current (A)
I
R
- Reverse Current (μA)
100
10
1
0.1
0.01
0.001
150 °C
125 °C
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 °C
0
200
400
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 21-Feb-17
Document Number: 95953
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PH3006LHN3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.50
0.20
0.10
0.05
0.02
0.01
0.1
Single
pulse
0.01
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
120
110
100
Allowable Case Temperature (°C)
170
160
150
140
130
120
0
5
10
15
20
25
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note
(1)
DC
90
t
rr
(ns)
125 °C
80
70
60
50
40
400
500
600
700
800
900
1000
25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
35
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
700
RMS limit
600
500
Average Power Loss (W)
30
25
20
15
10
5
0
0
5
10
125 °C
Q
rr
(nC)
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
400
300
200
100
25 °C
15
20
400
500
600
700
800
900
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
Formula used: T
C
= T
J
- (P
d
+ P
dREV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig. 5)
P
dREV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R
= rated V
R
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Revision: 21-Feb-17
Document Number: 95953
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4PH3006LHN3
www.vishay.com
Vishay Semiconductors
18
16
14
12
125 °C
I
rec
(A)
10
8
6
4
2
400
500
600
700
800
900
1000
25 °C
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Current vs. dI
F
/dt
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
C
2
4
3
P
4
H
5
30
6
06
7
L
8
H
9
N3
10
Vishay Semiconductors product
Circuit configuration:
C = common cathode
-
-
-
-
FRED Pt Gen 4
P = TO-247 package
Process type:
H = hyperfast recovery
Current rating (30 = 2 x 15 A)
7
8
9
10
-
-
-
-
Voltage rating (06 = 600 V)
Package: L = long lead
H = AEC-Q101 qualified
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-C4PH3006LHN3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 3L
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95007
Revision: 21-Feb-17
Document Number: 95953
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
